• Title/Summary/Keyword: AMOLEDs

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Reducing AMOLED Manufacturing Costs

  • O'Regan, Marie
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.27-29
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    • 2008
  • Announcements by many companies have shown that market interest and technical potential exist for AMOLEDs. DuPont Displays is developing solution processing technology designed to address the high cost of manufacturing AMOLEDs via vapor deposition methods. By printing OLED displays, we can reduce costs and can subsequently scale OLED manufacturing to a competitive motherglass size.

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Single Crystal Silicon Thin Film Transistor using 501 Wafer for the Switching Device of Top Emission Type AMOLEDs (SOI 웨이퍼를 이용한 Top emission 방식 AMOLEDs의 스위칭 소자용 단결정 실리콘 트랜지스터)

  • Chang, Jae-Won;Kim, Hoon;Shin, Kyeong-Sik;Kim, Jai-Kyeong;Ju, Byeong-Kwon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.4
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    • pp.292-297
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    • 2003
  • We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

New Metric For Short-Range Uniformity of AMOLEDs

  • Arkhipov, Alexander;Lee, Baek-Woon;Park, Kyong-Tae;Kim, Chi-Woo;Lee, Jin-Seok
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.488-491
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    • 2008
  • The variations of the TFT characteristics in AMOLEDs result in the decrease of the uniformity of the displays. Measurement of the long-range uniformity (LRU) is straightforward. However, there is no method for measuring the short-range uniformity (SRU) yet. Quantifying the SRU is important in evaluating various TFT backplanes and compensation circuits. We propose new methods for measuring SRU.

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Driving technologies for AMOLEDs

  • Matsueda, Yojiro;Kim, Hong-Kwon;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.393-398
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    • 2006
  • This paper classifies driving technologies for AMOLEDs by the driving TFT conditions in pixels. A saturation region operation type driving TFT circuit provides good stability of OLED because of constant current drive. However, complicated compensation circuits are necessary to avoid effect of the TFT characteristics deviation. On the other hand, a linear region operation type driving TFT circuit provides better uniformity of the display image and lower power consumption. However, the stability of OLED is critical because of constant voltage drive.

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Pixel Circuit with Threshold Voltage Compensation using a-IGZO TFT for AMOLED

  • Lee, Jae Pyo;Hwang, Jun Young;Bae, Byung Seong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.594-600
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    • 2014
  • A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

LTPS technology for improving the performance of AMOLEDs

  • Choi, Hong-Seok;Choi, Jae-Sik;Hong, Soon-Kwang;Kim, Byeong-Koo;Ha, Yong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1781-1784
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    • 2007
  • The increase of repetition rate, the dithering of laser optics, and the extension of pulse duration time are major approaches in improving the picture quality of AMOLEDs fabricated by excimer laser crystallization (ELC). Advanced solid phase crystallization (ASPC) has been developed to improve the uniformity and the process cost. Even though the mobility of ASPC-TFT is lower than that of ELC-TFT, it is high enough to drive AMOLED pixels.

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A Novel Voltage-Programming Pixel with Current-Correction Method for Large-Size and High-Resolution AMOLEDs on Poly-Si Backplane

  • In, Hai-Jung;Bae, Joon-Ho;Kang, Jin-Sung;Kwon, Oh-Kyong;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.901-904
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    • 2005
  • A novel active matrix organic light diodes (AMOLEDs) voltage-programming pixel structure with current-correction method is proposed for largesize and high-resolution poly-Si AMOLED panel applications. The HSPICE simulation results shows that the maximum error of emission current in proposed pixel is 1.536%, 2.45%, and 2.97% with the ${\pm}12.5%$ mobility variation and ${\pm}0.3V$ threshold voltage variation for 30-, 40-, and 50-inch HDTV panels, respectively.

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Color and Luminance Compensation for Large AMOLEDs

  • Park, Kyong-Tae;Arkipov, Alexander;Lee, Baek-Woon;Kim, Seon-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.850-853
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    • 2009
  • Many well-known pixel compensation circuits have been applied to control TFT $V_{th}$ variations on small size AMOLED panels. For large (>30-inch) AMOLEDs, luminance and color uniformity are affected by TFT variations, but also by ELVDD IR drop and cavity non-uniformity which are not easily compensated by in-pixel circuits. AMOLED panels may also suffer from manufacturing-induced mura. An external compensation method based on optical measurements is proposed and applied to large AMOLED panels. It improves luminance uniformity by up to 95% at 200nits and color uniformity by up to 99% (${\Delta}$u'v' <0.004) on large AMOLED panels, and provides-increased margin against processinduced mura.

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Recent Advances in Performance of Solution Processed Small Molecule OLEDs at DuPont Displays

  • LeCloux, Daniel D.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.340-343
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    • 2007
  • We describe the DuPont Displays full color OLED printing and materials technologies. The process is more cost-effective and scalable than thermal evaporation through shadow masks. The materials lifetime is sufficient for most portable applications and is nearing that required for stationary displays. Recently, 4.3" WQVGA displays were demonstrated.

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