• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.37-43
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• 2012

We were studied that AZO conductive thin film can substitute for FTO electrode in dye sensitized solar cell. Three types of AZO films were deposited on soda-lime glass(AZO/glass, AZO/AZO/glass, textured AZO/AZO/glass) using RF magnetron sputtering process and investigated their properties of electrical, optical, and photoelectric conversion rate. The textured AZO/AZO/glass has the lowest resistivity of $3.079{\times}10^{-4}\;{\Omega}cm$ among other films. And the optical transmittance rate was better than both non textured AZO/AZO/glass and FTO/glass in the visible region. After manufacturing dye solar cells using the three types of AZO films, the textured AZO/AZO/glass showed the highest photoelectric conversion rate of 3.68% among AZO samples. But the transformation rate was slightly lower than FTO cells (4.52%). However, the conductive film of textured AZO/AZO/glass can be applicable to use an electrode in solar cells as cost-effective products.

• 공업화학
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• 제30권2호
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• pp.247-253
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• 2019

본 연구에서는 분자 내 하나의 페닐고리의 4-, 3,5-, 또는 3,4,5- 위치에 아조-메소젠기가 각각 결합된 화합물들을 합성하고 이들의 액정성 및 광화학성에 대하여 조사하였다. Azo1과 Azo2 계열의 화합물은 각각 선형과 평면형의 구조이며, Azo3 계열의 화합물은 비교적 부피가 큰 구조를 하고 있는 것으로 조사되었다. 화합물 BA-Azo2와 BA-Azo3는 액정성을 나타내지 않았고, BE-Azo1와 BE-Azo2는 단방성 액정성을, 나머지 화합물들은 양방성 액정성을 나타냈다. 이러한 액정 거동은 분자 내 아조-메소젠기의 존재로부터 부여된 것으로 액정성을 나타내는 대부분의 화합물들은 스멕틱상을 형성하였다. 그리고 모든 RM-AzoX 화합물들은 분자 내 아조기의 존재로 인하여 광 이성질현상을 나타냈으며, 광 이성질화 속도는 RM-Azo3 < RM-Azo1 < RM-Azo2의 순서로 조사되었으며, 이는 아조벤젠기 주위의 입체 장애에 의존하는 것으로 생각된다. 이러한 결과들로부터, 화합물의 액정성과 광화학적 성질들은 분자 내 페닐고리에 결합된 아조-메소젠기의 결합위치나 개수에 기인한다는 것을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.9-11
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• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.27-31
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• 2017

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.143-143
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• 2006

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• 한국표면공학회지
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• 제39권1호
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• pp.9-12
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• 2006

Al-doped ZnO(AZO)/Ag/AZO multi-layer films deposited on PET substrate by RF magnetron sputtering have a much better electrical properties than Al-doped ZnO single-layer films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the optimum thickness of Ag layers was determined to be $112{\AA}$ for high optical transmittance and good electrical conductivity. With about $1800{\AA}$ thick AZO films, the multi-layer showed a high optical transmittance in the visible range of the spectrum. The electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. A high quality transparent electrode, having a resistance as low as $6\;W/{\square}$ and a high optical transmittance of 87% at 550 nm, was obtained by controlling Ag deposition parameters.

• 한국재료학회지
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• 제30권6호
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• pp.285-291
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• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.479.1-479.1
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• 2014

본 연구는 RF 마그네트론 스퍼터링 장치를 이용하여 AZO 박막을 증착하였다. 증착되어진 AZO 박막은 플라즈마 화학기상증착장치를 이용하여 플라즈마 처리를 하였다. 플라즈마 가스로는 산소가스를 사용하였으며, AZO 박막을 산소플라즈마 처리 시간과 플라즈마 파워에 따라 박막의 특성이 변화되는 것을 관찰하였다. RF 마그네트론 스퍼터링 장치로 증착되어진 AZO 박막의 비저항값과 투과율을 측정한 결과 각각 $5.6{\times}10-4{\Omega}.cm$과 80%를 나타내었다. 증착되어진 AZO 박막을 플라즈마 처리 시간과 플라즈마 파워에 따라 산소플라즈마 처리를 실시하였고, 플라즈마 처리가 되어진 AZO 박막의 구조적, 전기적, 광학적 특성등을 고찰하였으며, 태양전지 응용을 위하여 AZO 박막의 기계적인 특성들을 고찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.