• Journal of Adhesion and Interface
• /
• v.5 no.4
• /
• pp.24-33
• /
• 2004

• Journal of the Korean institute of surface engineering
• /
• v.44 no.6
• /
• pp.246-249
• /
• 2011

Surface modification before coating nickel by coupling agents and/or etchant of glass did not provide enough adhesive strength of electroless nickel deposits on glass. Effect of heat treatments on hardness as well as adhesion of nickel deposits was studied by using tape test for adhesion, nanoindenter for hardness and glancing angle x-ray diffractometer (GAXRD) for phase characterization. Heat treatment improved hardness as well as adhesion. XRD results give that the improvements of adhesion and hardness are due to the formation of $NiSiO_4$ around the interface between the nickel deposits and the glass and the precipitation of $Ni_3P$ causing precipitation hardening, respectively. The details in effects of heat treatment on adhesion and hardness are described here.

• Corrosion Science and Technology
• /
• v.4 no.6
• /
• pp.222-225
• /
• 2005

The adhesion strength of metal plating on PC was studied. In this study, surface was treated by chemical agents or DBD(dielectric barrier discharge) plasma to imporve the adhesion. The surface roughness, contact angle, gloss of plating and adhesive strength were measured. Adhesion strengths of Ni plating on prepared PC by NaOH and KOH solution were $12.3kgf/cm^2$ and $7.5kgf/cm^2$, respectively. The highest adhesion strength was obtained in the plasma treated one, $27.8kgf/cm^2$.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.1
• /
• pp.1-4
• /
• 2004

MoS$_2$-Ti films were deposited on SKD-11 tool steel substrate by a D.C. magnetron sputtering system. The influence of deposition parameters on the adhesion of the films was investigated by the scratch test. Crosssection morphology was evaluated using FE-SEM. The plasma etching played an important role on the adhesion of the films. The appropriate etching conditions roughened the surface, resulting In the improved adhesion of the film. The adhesion of the film increased with the interlayer thickness up to 110 nm and then decreased slightly with further increasing of interlayer thickness. The adhesion was highest at a bias voltage of -50 V. Further increase of the bias voltage decreased the film adhesion.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.596-596
• /
• 2006

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.12
• /
• pp.867-871
• /
• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.29 no.6 s.237
• /
• pp.804-808
• /
• 2005

A pneumatic tire is made up of many flexible filaments of high modulus cord of natural textile, synthetic polymer, glass fiber, or fine hard drawn steel embedded in and bonded to a matrix of low modulus polymetric material. Adhesion property of these materials is very important in tire durability safety because belt-leaving-belt tread separation reduces the ability of a driver to control a vehicle, whether or not the separation is accompanied by a loss of air. In this study adhesion test of carcass-belt-tread is conducted on material properties of 5 PCR tire model, which are on sale in domestic market and analyzed adhesion properties. For those tire models FMVSS 109 indoor high speed durability test is conducted to analyze the correlation between adhesion force and high speed performance of tires and found the correlation between the two test results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.5
• /
• pp.450-456
• /
• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.4
• /
• pp.357-361
• /
• 2006

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.70-71
• /
• 2005

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.