• 한국재료학회지
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• 제27권8호
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• pp.397-402
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• 2017

We used an etching process to control the line-width of screen printed Ag paste patterns. Ag paste was printed on anodized Al substrate to produce a high power LED. In general, Ag paste spreads or diffuses on anodized Al substrate in the process of screen printing; therefore, the line-width of the printed Ag paste pattern increases in contrast with the ideal line-width of the pattern. Smudges of Ag paste on anodized Al substrate were removed by neutral etching process without surface damage of the anodized Al substrate. Accordingly, the line-width of the printed Ag paste pattern was controlled as close as possible to the ideal line-width. When the etched Ag paste pattern was used as a seed layer for electroless Ni plating, the line width of the plated Ni film was similar to the line-width of the etched Ag paste pattern. Finally, in pattern formation by Ag paste screen printing, we found that the accuracy of the line-width of the pattern can be effectively improved by using an etching process before electroless Ni plating.

• Journal of Welding and Joining
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• 제20권1호
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• pp.91-96
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• 2002

Three different kinds of substrate used in this study : bare Cu, electroless Ni/Cu substrate with a Nilayer thickness of $5\mu\textrm{m}$, immersion Au/electroless Ni/Cu substrate with the Au and Ni layer of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness, respectively. The wettability and interfacial tension between various substrate and Sn-3.5Ag solder were examined as a function of soldering temperature, types of flux. The wettability of Sn-3.5Ag solder increased with soldering temperature and solid content of flux. The wettability of Sn-3.5Ag solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and decreased wettability.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.130-133
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• 2002

Solder leaching resistance of the metal electrode is an important factor with regard to adhesion properties of ceramic substrate. In the Low Temperature Co-fired Ceramics (LTCC), Ag-Pd or Ag-Pt pastes are used instead of pure Ag paste to prevent leaching. Solder leaching behavior of the Ag-Pd paste in relation to LTCC raw material powder size was investigated. First fabrication of LTCC green tape with different particle size was done. LTCC substrates with Ag-Pd electrode were prepared using conventional multilayer ceramic process. Dipping test was performed to test solder leaching behavior of the electrode. Ag-Pd electrode on LTCC substrate with smaller particle size achieved higher solder leaching resistance.

• Composites Research
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• 제22권3호
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• pp.9-17
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• 2009

본 논문에서는 분자동력학 방법을 이용하여 Ag 필름/Cu기판에 대한 나노인덴테이션 특성을 파악하였다. 필름의 강성과 경도는 필름의 두께에 관계되어있으며, 임계범위 내에서, 그래인 크기가 증기하면 강성과 경도도 증가하는 것을 확인하였다. 5nm 두께 이하의 Ag필름/Cu기판의 강성과 경도는 벌크 Ag의 경우에 비해 낮은 값을 나타내었다. 특히 4nm 두께 이하의 Ag필름/Cu기판의 인덴테이션에 있어서, 전위 집적과 불일치 전위사이의 상호작용에 의해 계면상에서 꽃모양의 전위 루프가 발생 하였다. 이는 인덴테이션 하중과 변위 커브에서 하중이 저하되는 것과 관계있는 것으로 사료되고 있다.

• 센서학회지
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• 제30권3호
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• pp.185-189
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• 2021

Herein, we propose a functional polymer cantilever to enhance maturation and contractile force of cardiomyocytes. The proposed cantilever consists of a surface-patterned polymer substrate and silver nanowires (AgNWs). The AgNWs are transferred to the PDMS substrate using conventional molding techniques. This thin metallic surface significantly improves the adhesion of cardiomyocyte on the surface-patterned PDMS with the hydrophobic characteristics. In addition, the use of AgNWs improves the visibility of the conducting PDMS substrate for the observation of cardiomyocyte through an inverted microscope. The AgNWs also assist in synchronizing each cardiomyocyte to maximize its contractile force.

• 한국표면공학회지
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• 제56권1호
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• pp.77-83
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• 2023

The reliability of leadframe-based semiconductor package depends on the adhesion between metal and epoxy molding compound (EMC). In this study, the Ag surface was electrochemically treated in a solution containing silanes in order to improve the adhesion between Ag and epoxy substrate. After electrochemical treatment, the thin silane layer was deposited on the Ag surface, whereby the peel strength between Ag and epoxy substrate was clearly improved. The improvement of peel strength depended on the functional group of silane, implying the chemical linkage between Ag and epoxy.

• 한국분말재료학회지
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• 제13권1호
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• pp.18-24
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• 2006

The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

• 한국재료학회지
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• 제23권7호
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• pp.379-384
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• 2013

In order to produce size-controllable Ag nanoparticles and a nanomesh-patterned Si substrate, we introduce a rapid thermal annealing(RTA) method and a metal assisted chemical etching(MCE) process. Ag nanoparticles were self-organized from a thin Ag film on a Si substrate through the RTA process. The mean diameter of the nanoparticles was modulated by changing the thickness of the Ag film. Furthermore, we controlled the surface energy of the Si substrate by changing the Ar or $H_2$ ambient gas during the RTA process, and the modified surface energy was evaluated through water contact angle test. A smaller mean diameter of Ag nanoparticles was obtained under $H_2$ gas at RTA, compared to that under Ar, from the same thickness of Ag thin film. This result was observed by SEM and summarized by statistical analysis. The mechanism of this result was determined by the surface energy change caused by the chemical reaction between the Si substrate and $H_2$. The change of the surface energy affected on uniformity in the MCE process using Ag nanoparticles as catalyst. The nanoparticles formed under ambient Ar, having high surface energy, randomly moved in the lateral direction on the substrate even though the etching solution consisting of 10 % HF and 0.12 % $H_2O_2$ was cooled down to $-20^{\circ}C$ to minimize thermal energy, which could act as the driving force of movement. On the other hand, the nanoparticles thermally treated under ambient $H_2$ had low surface energy as the surface of the Si substrate reacted with $H_2$. That's why the Ag nanoparticles could keep their pattern and vertically etch the Si substrate during MCE.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.72-74
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• 2003

We fabricated textured Ag substrates for coated conductor and evaluated the effects of annealing temperature on microstructural evolution, texture formation, and surface morphology. A strong {110}〈110〉 textured Ag substrate was obtained by cold rolling and annealing at 80$0^{\circ}C$: the full-width at half-maximum(FWHM) value of {110}〈110〉 poles was as sharp as 10$^{\circ}$. Surface morphology was evaluated by using Atomic force microscopy(AFM). Root-mean-square(RMS) roughness of the substrate annealed at 80$0^{\circ}C$ was 39.2 nm. The substrate of strong texture and smooth surface, fabricated in our study, is considered to be suitable for use as a substrate for deposition of superconductor films.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.852-858
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• 2007

The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.