• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.399-405
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• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• Corrosion Science and Technology
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• v.22 no.6
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• pp.408-418
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• 2023

In this study, we synthesized and characterized garnet-type Li_7-xAl_xLa₃Zr_2-(5/4)yNbyO₁₂ (LALZN) solid electrolytes for all-solid-state battery applications. Our novel approach focused on enhancing ionic conductivity, which is crucial for battery efficiency. A systematic examination found that co-doping with Al and Nb significantly improved this conductivity. Al³⁺ and Nb⁵⁺ ions were incorporated at Li⁺ and Zr⁴⁺ sites, respectively. This doping resulted in LALZN electrolytes with optimized properties, most notably enhanced ionic conductivity. An optimized mixture with 0.25 mol each of Al and Nb dopants achieved a peak conductivity of 1.32 × 10^-4 S cm^-1. We fabricated symmetric cells using these electrolytes and observed excellent charge-discharge profiles and remarkable cycling longevity, demonstrating the potential for long-term application in battery systems. The garnet-type LALZN solid electrolytes, with their high ionic conductivity and stability, show great potential for enhancing the performance of all-solid-state batteries. This study not only advances the understanding of effective doping strategies but also underscores the practical applicability of the LALZN system in modern energy storage solutions.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1301-1304
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method. The effect of the Al doping with varying Al/Zn mole ratio and the post-deposition heat treatment on the electrical resistivity and optical transmittance of the prepared films have been investigated. From the experimental results, the ZnO:Al thin films with resistivity as low as $3{\times}10^{-3}{\Omega}cm$ and transmittance as high as 80% can be obtained by Al doping. Also We have found the annealing of the as-deposited ZnO film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation. However, the annealing effect of ZnO:Al thin films is smaller than ZnO films with respect to reduction in resistivity.

• Resources Recycling
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• v.16 no.5
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• pp.46-50
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• 2007

Blue phosphor calcium aluminate, $CaAl_2O_4:Eu^{2+}$ co-doped with $Nd^{3+}$ was prepared by solid state synthesis method. Phosphor materials with 1 mol% $Eu^{2+}$ and varying compositions of $Nd^{3+}$ show high brightness and long persistent luminescence. The synthesized phosphor materials were investigated by powder x-ray diffraction (XRD), SEM, TEM, photoluminescence excitation and emission studies. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}:Nd^{3+}$ was observed in the blue region (${\lambda}_{max}=440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. $Nd^{3+}$ ion doping in the phosphor results in long afterglow phosphorescence when the excitation light is cut off.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.14-18
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• 2007

The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.351-355
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• 2010

Transparent conducting aluminum-doped ZnO thin films were deposited using a sol-gel process. In this study, the important deposition parameters were investigated thoroughly to determine the appropriate procedures to grow large area thin films with low resistivity and high transparency at low cost for device applications. The doping concentration of aluminum was adjusted in a range from 1 to 4 mol% by controlling the precursor concentration. The annealing temperatures for the pre-heat treatment and post-heat treatment was $250^{\circ}C$ and 400-$600^{\circ}C$, respectively. The SEM images show that Al doped and undoped ZnO films were quite uniform and compact. The XRD pattern shows that the Al doped ZnO film has poorer crystallinity than the undoped films. The crystal quality of Al doped ZnO films was improved with an increase of the annealing temperature to $600^{\circ}C$. Although the structure of the aluminum doped ZnO films did not have a preferred orientation along the (002) plane, these films had high transmittance (> 87%) in the visible region. The absorption edge was observed at approximately 370 nm, and the absorption wavelength showed a blue-shift with increasing doping concentration. The ZnO films annealed at $500^{\circ}C$ showed the lowest resistivity at 1 mol% Al doping.

• Korean Journal of Materials Research
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• v.14 no.5
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• pp.328-333
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• 2004

Transparent ZnO:Al conductor films for the optoelectronic devices were deposited by using the capacitively coupled DC magnetron sputtering method. The effect of Al doping concentration and discharge power on the electrical and optical properties of the films was studied. The film resistivity of $8.5${\times}$10^{-4}$ $\Omega$-cm was obtained at the discharge power of 40 W with the ZnO target doped with 2 wt% $Al_2$$_O3$. The transmittance of the 840 nm thick film was 91.7% in the visible waves. Increasing doping concentration of 3 wt% $Al_2$$O_3$ in ZnO target results in significant decrease of film resistivity, which may be due to the formation of $Al_2$$O_3$ particles in the as-deposited ZnO:Al film and the reduced ZnO grain sizes. Increasing DC power from 40 to 60 W increases deposition rate by more than 50%, but can induce high defect density in the film, resulting in higher film resistivity.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.207-210
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• 2014

$TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.11
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• pp.550-554
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_x)TiO_3 + yAl_2O_3$ wt% (x=0.10, 0.15, 0.20, y=0~3.0) ceramics were fabricated by the mixed-oxide method, and their structural and dielectric properties were investigated with variation of composition ratio and $Al_2O_3$ doping content. As results of the X-ray diffraction and microstructure analysis, all BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with an increase of $Al_2O_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing $Al_2O_3$doping content. The dielectric loss is minimum at BSCT doped with 1.5wt% $Al_2O_3$content. The tunability was decreased with increasing an Ca content and the BSCT(50/40/10) specimen doped with 2.0wt% $Al_2O_3$content showed the maximum value of 4.2%.