• Journal of Welding and Joining
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• v.17 no.4
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• pp.53-59
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• 1999

Amorphous alloys have also been called glassy alloys or non-crystalline alloys. They are made by the rapid solidification. The solidification occurs so rapid that the atoms are frozen in their liquid configuration. There are unique magnetic, mechanical, electrical and corrosive behaviors which result form their amorphous structure. In the study. amorphous coatings were manufactured with Ni-Cr-B-Si powders by flame spray. Measurement of hardness, were resistance, corrosion resistance and observation of microstructures and XRD, DSC were performed to investigate characteristics of amorphous coatings. The experimental results obtained as follow: 1) Amorphous powders could not be manufactured with the spraying in the spraying in the liquid nitrogen. But, amorphous coatings could be manufactured with the rotation cooling method by liquid nitrogen. In the fabrication of amorphous coatings, major factor was the rapid cooling by rotation of the substrate. 2) Hardness of coatings was obtained Hv 960 by formation of amorphous phase. But, wear resistance decreased. That was due to porosity in the coatings by the rapid cooling. 3) In the case of corrosion resistance, amorphous coatings were superior to air-cooled coatings. That was due to formation of amorphous phase. 4) After amorphous coatings were heat-treated at 520℃ for 1hr. hardness increased 80% and wear resistance increased 30% comparing with air cooled coatings. These were due to crystallization of amorphous phase and decrease of porosity by heat-treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.

• Applied Microscopy
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• v.43 no.3
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• pp.127-131
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• 2013

The crystallization behavior in the $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$amorphous alloys has been investigated. As-quenched $Al_{87}Ni_3Y_{10}$ amorphous phase decomposes by simultaneous formation of Al and intermetallic phase at the first crystallization step, while as-quenched $Al_{88}Ni_3Y_9$ amorphous phase decomposes by forming Al nanocrystals in the amorphous matrix. The density of Al nanocrystals is extremely high and the size distribution is homogeneous. Such a microstructure can result from rapid explosion of the nucleation event in the amorphous matrix or growth of the preexisting nuclei embedded in the as-quenched amorphous matrix. The final equilibrium crystalline phases and their distribution at 873 K are exactly same in both $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$ alloys.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.29-36
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• 1992

The fundamental research about the amorphous ferrite, which is expected as the important material for electronic and information imdustry in future, was carried out in this work. Because the ferromagnetic amorphous ferrites reported recently are very inferior in magnetic properties than the crystalline ferrites, the development of the more ferromagnetic amorphous ferrites is required. In order to obtain the fundamental data for the preparation of amorphous ferrites, the hand-made twin-roller quenching apparatus was used for rapid quenching. Investigation on amorphous ferrite in the system $CaO-Bi_{2}O_{3}-Fe_{2}O_{3}$ has been carried out in the composition of 10-50 mole% CaO, 10-50 mole% $Bi_{2}O_{3}$, 40-70 mole% $Fe_{2}O_{3}$. Large magnetization values were obtained near the composition of the mixture of $BiFeO_{3}$ and $CaFe_{4}O_{7}$. Especially, an amorphous ${(CaO)}_{20}{(Bi_{2}O_{3})_{15}{(Fe_{2}O_{3})}_{65}$ specimen has a magmetization value of about 21.84 emu/g at 0K(10 kOe). Fe $M\"{o}ssbauer$ absorption spectrum indicates that this specimen is compsed of two amorphous phases, antiferromagnetic phase($\alpha$-phase) and ferromagnetic phase($\beta$-phase). Crystallization of this amorphous ferrite was happened in steps-$550^{\circ}C$ and $775^{\circ}C$, then observed crystal phases were perovskite phase of $BiFeO_{3}$ and $Fe_{2}O_{3}$ phase.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.4
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• pp.320-326
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• 1999

In rapidly solidified $Al_{92-x}Nd_8$(Cu,Ag)x ($0{\leq}X{\leq}10at%$) alloys, amorphous single phases were obtained in the ranges of $Oat%{\leq}X{\leq}4at%$ for Al-Nd-Cu system and $Oat%{\leq}X{\leq}6at%$ for Al-Nd-Ag system, respectively. Mesoscopic structures consisted of amorphous and crystalline phases were formed above solute ranges. It was founded that the mesoscopic structures were also formed near 1st exothermic peak on DSC curve by aging in amorphous single phase alloys. For example, amorphous $Al_{92-x}Nd_8$(Cu,Ag)x (X=2.4at%) alloys containing nanoscale Al particles and compounds, i.e., mesoscopic structure, exhibited higher tensile fracture strength(${\sigma}_f$) than those of amorphous single phase alloys with the same composition. The ${\sigma}_f$ showed a maximum value in the $V_f$ ranges of 10~15%. The reason is presumed that the nanoscale precipitates which have higher mechanical strength compared with the amorphous phase with the same composition act as an effective resistance to shear deformation of the amorphous matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Journal of Magnetics
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• v.7 no.4
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• pp.143-146
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• 2002

Mechanical milling technique is considered to be a useful way of processing the fine Nd-Fe-B-type powder with high coercivity. In the present study, phase evolution of the $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ (x=0-0.6) alloys during the high energy mechanical milling and annealing was investigated. The effect of Co-substitution on the crystallization of the mechanically milled $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ amorphous material was examined. The Nd-Fe-B-type alloys can be amorphized completely by a high-energy mechanical milling. On annealing of the amorphous material, fine $\alpha$-Fe crystallites form first from the amorphous. These fine $\alpha$-Fe crystallites reacts with the remaining amorphous afterwards, leading to crystallization to $Nd_2Fe_{14}$B phase. The Co-substitution for Fe in $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ ($\mu$x=0∼0.6) alloys lower significantly the crystallization temperature of the amorphous phase to the $Nd_2Fe_{14}$B phase. The mechanically milled and annealed $Nd_{15}Fe_{77}B_8$ alloy without Co-substitution exhibits consistently better magnetic properties with respect to the alloys with Co-substitution.

• Applied Microscopy
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• v.26 no.2
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• pp.235-241
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• 1996

Amophization and decomposition behaviour in $Mg_{62}Cu_{26}Y_{12}$ alloy prepared by melt spinning method and wedge type metal mold casting method have been investigated by a detailed transmission electron microscopy. Amorphous phase has formed in melt-spun ribbon. In the case of the wedge type specimen, however, the amorphous phase has formed only around the tip area within about 2 mm thickness. The remaining part of the wedge type specimen consists of crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$. The supercooling for crystallization behaviour of the amorphous $Mg_{62}Cu_{26}Y_{12}$ alloy, ${\Delta}T_x$ has been measured to be about 60 K. Such a large undercooling of the crystallization bahaviour enables formation of the amorphous phase in the $Mg_{62}Cu_{26}Y_{12}$ alloy under the cooling rate of $10^{2}K/s$. The amorphous $Mg_{62}Cu_{26}Y_{12}$ has decomposed into crystalline phases, $Mg_{2}Cu\;and\;Cu_{2}Y$ after heat treatment at $170^{\circ}C\;and\;250^{\circ}C$.

• Transactions of the Society of Information Storage Systems
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• v.3 no.3
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• pp.118-122
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• 2007

Phase-change wet-etching technology using GeSbTe phase-change films is developed. Selective etching between an amorphous and a crystalline phase can be carried out with an alkaline etchant of NaOH. Etching selectivity is dependent not only on the concentration of the alkaline etchant but also on the film structure. Specifically, metal films for heat control cause marked effects on the etching properties of GeSbTe film. Surviving amorphous pits can be obtained with Al metal layer, however etched amorphous pits are seen with Ag metal layer. An opposite selective etching behavior can be observed between samples with two different metal layers.