• 제목/요약/키워드: AnCE

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유도결합 C1$_2$/CF$_4$/Ar 플라즈마를 이용한 CeO$_2$ 박막 식각후 표면반응 (Surface Reactions after the Etching of CeO$_2$ Thin films using Inductively Coupled C1$_2$/CF$_4$/Ar Plasmas)

  • 이병기;김남훈;장윤성;김경섭;김창일;장의구
    • 마이크로전자및패키징학회지
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    • 제9권2호
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    • pp.27-31
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    • 2002
  • 본 연구에서는 ICP 식각장비에서 700 W의 RF전력과 -200 vo1t의 dc 바이어스 전압 및 15 mTorr의 반응로 압력에서 $Ar/CF_2$ 혼합가스에 $C1_2$가스를 첨가하면서 $CeO_2$ 박막을 식각하였다 최대식각 속도는 10%의 $C1_2$ 가스를 첨가하였을 시에 250 $\AA$/min이었고, 이 조건에서 SBT에 대한 식각 선택비는 0.4이었다. XPS를 이용하여 식각된 $CeO_2$ 박막의 표면반응을 검토하였다. Ce 피크는 대부분 $CeO_2$또는 $Ce_2O_3$형태로 Ce-O 결합상태임을 관찰할 수 있었다. 대부분의 Cl 피크는 CeClx 또는 $Ce_x/O_yCl_z$ 형태로 Ce 원자와 결합하고 있었다

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고밀도 유도결합 $C1_2CF_4Ar$ 플라즈마를 이용한 $CeO_2$ 박막 식각후 표면반응에 관한 연구 (An Investigation on the Surface Reactions after the Etching of $CeO_2$ Thin Films using High Denstity Inductively Coupled $C1_2CF_4Ar$Ar Plasmas)

  • 장윤성;김남훈;김경섭;이병기;엄준철;김태형;장의구
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.255-258
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    • 2002
  • In this study, $CeO_2$thin films were etched with an addition of $Cl_2$gas to $Ar/CF_4$gas mixing in an inductively coupled plasma(ICP) etcher. The surface reactions of the etched $_CeO2$thin films were investigated by X-ray photoelectron spectroscopy(XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$or $CeO_3$compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_{x}$ compounds.

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Ar/CF4/Cl2 플라즈마에 의한 CeO2 박막의 식각 특성 연구 (A Study on Etch Characteristics of CeO2 Thin Film in An Ar/CF4/Cl2 Plasma)

  • 장윤성;김동표;김창일;장의구
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.388-392
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    • 2002
  • In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

Cu/CeO2 촉매의 구조적 특성이 일산화탄소 저온 산화반응에 미치는 영향 연구 (A Study on the Influence of the Structural Characteristics of Cu/CeO2 Catalyst on the Low-Temperature Oxidation of Carbon Monoxide)

  • 김민수;최경륜;김세원;홍성창
    • 청정기술
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    • 제26권4호
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    • pp.286-292
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    • 2020
  • 본 연구는 Cu/CeO2-X 촉매의 저온 CO 산화 활성에 미치는 영향을 촉매의 구조적 특성, 반응 특성을 통해 확인하였다. 사용된 촉매는 습윤 함침법으로 제조되었으며, 각기 다른 소성온도(300~600 ℃)에서 형성된 CeO2 (지지체)를 이용하여 Cu (활성금속)를 담지함으로써 Cu/CeO2-X 촉매를 제조하였다. 제조된 Cu/CeO2-X 촉매는 저온 CO 산화 활성을 평가하였다. 125 ℃에서 Cu/CeO2_300 촉매는 90% 이상의 활성을 나타냈으며, CeO2의 소성온도가 증가됨에 따라 활성이 점차 감소하여, Cu/CeO2_600 촉매는 65%를 나타냈다. 다음으로 촉매의 물리/화학적 특성을 Raman, BET, XRD, H2-TPR, XPS 분석으로 확인하였다. XPS 분석 결과, CeO2-X의 소성온도가 낮을 수록 불안정한 Ce3+ 종(비 화학양론 종) 비율이 증가하였다. 증가된 Ce3+종은 Cu와 결합함으로 써 치환결합을 형성하였으며 Raman 분석의 CeO2 peak 변화와 H2-TPR 분석의 치환결합 구조의 환원 peak를 통해 확인하였다. 결과적으로 Cu와 CeO2의 치환 결합 형성은 촉매의 redox 특성 및 저온 CO 산화 활성을 증진시켰다고 판단된다.

Modeling of CeO2, Ce2O3, PrO2, and Pr2O3 in GGA+U formalism

  • 안기용;유동수;이종호;정용재
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.435-435
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    • 2011
  • The electronic structure and various physical properties of CeO2, Ce2O3, PrO2, and Pr2O3 have been studied from the framework of Ab-initio by the all-electron projector-augmented-wave (PAW) method, as implemented VASP (Vienna Ab-initio Simulation Package). The generalized gradient approximation (GGA) with effective U (Ueff) has been used to explain the strong on-site Coulomb repulsion among the localized Ce 4f electrons. The dependence of selected observables of these materials on the Ueff parameter has been scrutinized. The studied properties contain lattice constants, density of states, and reaction energies of CeO2, Ce2O3, PrO2, and Pr2O3. For CeO2 and PrO2, the GGA(PBE)+U results are in good agreement with experimental data whereas for the computational calculationally more demanding Ce2O3 and Pr2O3 both approaches give comparable accuracy. This results represent that by choosing an appropriate Ueff it is possible to reliably describe structural and electronic properties of CeO2, Ce2O3, PrO2, and Pr2O3, which enables modeling of oxygen reduction reaction processes involving ceria-based materials.

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단백질에 대한 그라프트 공중합 (제3보). Cerium (IV) 이온에 의한 비닐 단위체의 그라프트 공중합에 대한 메카니즘 (Graft Copolymerization to Proteins (III). Mechanism of Cerium (IV) Ion-Initiated Graft Copolymerization)

  • 조의환;안광덕
    • 대한화학회지
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    • 제20권4호
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    • pp.316-320
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    • 1976
  • 단백질에 대한 비닐 단위체의 그라프트 공중합 실험결과를 기초로하여 유기물과 Ce(IV)이온의 산화환원계에 의하여 개시되는 중합반응에 대하여 중합반응 메카니즘을 추구하였다. Ce(IV) 이온에 의한 산화성 종결반응을 고려하여 반응속도식을 유도 하였으며 Ce(IV) 이온 농도가 클때와 작을 때를 별개로 취급하여 Ce(IV) 이온 농도의 변화에 따라 그라프트 수득률의 최대점이 나타나는 현상을 설명하였다.

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$Ar/CF_{4}/Cl_{2}$ 플라즈마에 의한 $CeO_2$ 박막의 식각 특성 연구 (A study on etch Characteristics of $CeO_2$ thin Film in an $Ar/CF_{4}/Cl_{2}$ Plasma)

  • 장윤성;장의구;김창일;이철인;김태형;엄준철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.217-220
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    • 2001
  • The possibility of cerium dioxide $(CeO_2)$ thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching $CeO_2$ thin films have been perfonned in an inductively coupled $Cl_{2}/CF_{4}/Ar$ plasma. The high etch rate of the $CeO_2$ thin film was $250\AA /m$ at a 10 % addition of $Cl_2$ into the $Ar(80)/CF_{4}(20)$. The surface reaction of the etched $CeO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

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Ar/CF$_4$/Cl$_2$ 플라즈마에 의한 CeO$_2$ 박막의 식각 특성 연구 (A study on etch Characteristics of CeO$_2$ thin Film in an Ar/CF/C1$_2$ Plasma)

  • 장윤성;장의구;김창일;이철인;김태형;엄준철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.217-220
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    • 2001
  • The possibility of cerium dioxide (CeO$_{7}$ ) thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching CeO$_2$ thin films have been performed in an inductively coupled C1$_2$/CF$_4$/Ar plasma. The high etch rate of the CeO$_2$ thin film was 250 ${\AA}$/m at a 10% addition of Cl$_2$ into the Ar(80)/CF$_4$(20). The surface reaction of the etched CeO$_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

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Effects of Exogenous Enzymes on Ruminal Fermentation and Degradability of Alfalfa Hay and Rice Straw

  • Yang, H.E.;Son, Y.S.;Beauchemin, K.A.
    • Asian-Australasian Journal of Animal Sciences
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    • 제24권1호
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    • pp.56-64
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    • 2011
  • This study was conducted to evaluate the use of exogenous enzymes as a potential means of improving the ruminal digestion (i.e., degradability) of alfalfa hay and rice straw. Twenty six enzyme-additives were examined in terms of protein concentration and enzymic activities on model substrates. The exogenous enzymes contained ranges of endoglucanase, xylanase, ${\beta}$-glucanase, ${\alpha}$-amylase, and protease activities. Six of the enzyme additives were chosen for further investigation. The enzyme additives and a control without enzyme were applied to mature quality alfalfa hay substrate and subsequently incubated in rumen batch cultures. Five of the enzyme additives (CE2, CE13, CE14, CE19, and CE24) increased total gas production (GP) at 48 h of incubation compared to the control (p<0.05). The two additives (CE14 and CE24) having the greatest positive effects on alfalfa hay dry matter, neutral detergent fibre (NDF) and acid detergent fibre (ADF) degradability were further characterized for their ability to enhance degradation of low quality forages. The treatments CE14, CE24, a 50:50 combination of CE14 and CE24 (CE14+24), and control (no enzyme) were applied to mature alfalfa hay and rice straw. For alfalfa hay, application of the two enzyme additives, alone and in combination, increased GP compared to the control at 48 h fermentation (p<0.05), whereas only CE14 and CE14+24 treatments improved GP from rice straw (p<0.05). Rumen fluid volatile fatty acid concentrations throughout the incubation of rice straw were analyzed. Acetate concentration was slightly lower (p<0.05) for CE14${\times}$CE24 compared to the control, although individually, CE14 and CE24 acetate concentrations were not different from the control. Increases (p<0.05) in alfalfa hay NDF degradability measured at 12 and 48 h of incubation occurred only for CE14 (at 12 h) and for CE14+24 (at 12 and 48 h). Similarly, ADF degradability increased (p<0.05) with CE14 and CE14+24. As for rice straw, increased DM degradability was observed at 12 and 48 h of incubation for all enzyme treatments with an exception for CE14 at 12 h. The degradability of NDF was improved by all the enzyme treatments at either incubation time, while ADF degradability was only enhanced at 48 h. Overall, the enzymes led to enhanced digestion of mature alfalfa and there was evidence of improved digestibility of rice straw, an even lower quality forage.

An Adaptive Learning Rate with Limited Error Signals for Training of Multilayer Perceptrons

  • Oh, Sang-Hoon;Lee, Soo-Young
    • ETRI Journal
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    • 제22권3호
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    • pp.10-18
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    • 2000
  • Although an n-th order cross-entropy (nCE) error function resolves the incorrect saturation problem of conventional error backpropagation (EBP) algorithm, performance of multilayer perceptrons (MLPs) trained using the nCE function depends heavily on the order of nCE. In this paper, we propose an adaptive learning rate to markedly reduce the sensitivity of MLP performance to the order of nCE. Additionally, we propose to limit error signal values at out-put nodes for stable learning with the adaptive learning rate. Through simulations of handwritten digit recognition and isolated-word recognition tasks, it was verified that the proposed method successfully reduced the performance dependency of MLPs on the nCE order while maintaining advantages of the nCE function.

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