• Transactions of Materials Processing
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• v.13 no.8
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• pp.704-709
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• 2004

The effect of annealing temperature on microstructures and mechanical properties of the 5052 Al sheets rolled 88% reduction at cryogenic temperature was investigated for the annealing temperature of 150 ~ $300^{\circ}C$, in comparison with those rolled at room temperature. The presence of equiaxed grains, whose size is about 200nm in a diameter, was observed in the alloy deformed 88% and annealed $200^{\circ}C$ for an hour. When compared with the deformation at room temperature, the deformation at cryogenic temperature showed the higher strengths and equivalent elongation after annealing at the annealing temperature below $200^{\circ}C$. However, for annealing above $250^{\circ}C$ materials deformed at cryogenic temperature showed the lower strength than those deformed at room temperature. This behavior might be attributed to the higher rate of recrystallization and growth in materials deformed at cryogenic temperature during annealing, due to the lager density of dislocations accumulated during the deformation.

• Tribology and Lubricants
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• v.37 no.2
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• pp.62-70
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• 2021

The problem with intermetallics coating using the heat of molten casting is that the heat generated during combustion synthesis dissolves the coating and the substrate metal. This study investigates whether pre-annealing before synthesis can control the reaction heat, with the aim of Ni₃Al coating on the casting surface. Therefore, the effects of the annealing temperature and time on the combustion synthesis behavior of the powder compact of Ni-25at%Al after annealing were investigated. As results, the reaction heat when synthesized decreased as the annealing temperature was high and the annealing time was longer. This was attributed to the fact that Al was diffused to Ni particles during low temperature annealing and intermediate Ni-Al compounds were formed during high temperature annealing. After combustion synthesis, however, it was found that their microstructures were almost identical except for the amount of intermediate intermetallics. Furthermore, an annealing temperature above 450℃, at which intermediate compounds begin to form, is needed to prevent the dissolving problem during synthesizing. The intermetallics synthesized after annealing at higher temperature and prolonger annealing time showed a good wear resistance. This might be because much intermediate intermetallics of high hardness were remained in the microstructure.

• Advances in Energy Research
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• v.3 no.2
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• pp.117-124
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• 2015

In this paper, we have reported an enhancement in thermoelectric properties of un-doped zinc oxide (ZnO) grown by molecular beam epitaxy (MBE) on silicon (001) substrate by annealing treatment. The grown ZnO thin films were annealed in oxygen environment at $500^{\circ}C-800^{\circ}C$, keeping a step of $100^{\circ}C$ for one hour. Room temperature Seekbeck measurements showed that Seebeck coefficient and power factor increased from 222 to $510{\mu}V/K$ and $8.8{\times}10^{-6}$ to $2.6{\times}10^{-4}Wm^{-1}K^{-2}$ as annealing temperature increased from 500 to $800^{\circ}C$ respectively. This observation was related with the improvement of crystal structure of grown films with annealing temperature. X-ray diffraction (XRD) results demonstrated that full width half maximum (FWHM) of ZnO (002) plane decreased and crystalline size increased as the annealing temperature increased. Photoluminescence study revealed that the intensity of band edge emission increased and defect emission decreased as annealing temperature increased because the density of oxygen vacancy related donor defects decreased with annealing temperature. This argument was further justified by the Hall measurements which showed a decreasing trend of carrier concentration with annealing temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.24.1-24.1
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• 2009

The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to $750^{\circ}C$, while it was smoothed with more increasing of annealing temperature due to the evaporation of buffer layer. It was found that the roughest surface of buffer layer improved the structural and optical properties of ZnO nanorods. For the post annealing case, the hydrothermally grown ZnO nanorods were annealed with various temperatures ranging from 450 to $900^{\circ}C$. Similarly in the buffer layer annealing case, the post annealing enhanced the properties of ZnO nanorods with increasing of annealing temperature up to $750^{\circ}C$. However, it was degraded with further increasing of annealing temperature due to the violent movement of atoms and evaporation. Finally, the buffer layer annealing and post annealing treatment could efficiently improve the properties of hydrothermally grown ZnO nanorods. The morphology and structural properties of ZnO nanorods grown by the hydrothermal synthesis were measured by atomic force microscopy (AFM), field emission scanning electron microscopy (SEM), and x-ray diffraction (XRD). The optical properties were also analyzed by photoluminescence (PL) measurement.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.08a
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• pp.233-239
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• 2004

The effect of annealing temperature on microstructures and mechanical properties of the sheets received $88\%$ reduction at cryogenic temperature was investigated for the annealing temperature of $150\~300^{\circ}C$, in comparison with those at room temperature. The presence of equiaxed grains, whose size is about 200nm in a diameter, was observed in 5052 Al alloy deformed $88\%$ and annealed $200^{\circ}C$ for an hour. When compared with the deformation at room temperature, the deformation at cryogenic temperature showed the higher strengths and equivalent elongation after annealing at the annealing temperature below $200^{\circ}C$. However, for annealing above $250^{\circ}C$ materials deformed at cryogenic temperature showed the lower strength than those deformed at room temperature. This behavior might be attributed to the higher rate of recrystallization and growth in materials deformed at cryogenic temperature during annealing, due to the lager density of dislocations accumulated during the deformation.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.721-724
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• 2003

A Fe-Si-B-Ni amorphous alloy manufactured by one roll melt-spinning method showed the crystallization temperature difference of a maximum $10^{\circ}C$ according to each lot. This temperature difference had a considerable influence on the annealing process to be conducted for obtaining the proper inductance of the alloy. The proper annealing temperature of the alloy was $480^{\circ}C$ and the annealing time increased as the crystallization temperature increased. The activation energy measured by Kissinger method increased as the crystallization temperature increased. Therefore, the annealing process must be adjusted by the crystallization temperature difference of the amorphous alloy.

• Transactions of Materials Processing
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• v.13 no.5
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• pp.449-454
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• 2004

The annealing behavior of a 5083 Al alloy deformed at cryogenic temperature was investigated, focusing on the evolution of microstructures and mechanical properties. Especially, the effects of annealing temperature, $150~300^{\circ}C$, and time, 3∼60min., on microstructures and mechanical properties of the sheets received 85% reduction at cryogenic temperature were investigated. The optimization of the annealing conditions resulted in a mixture of equiaxed grains and elongated subgrains, exhibiting a good combination of uniform elongation and high strength.

• Journal of Advanced Marine Engineering and Technology
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• v.18 no.1
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• pp.114-122
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• 1994

A cold temperature control system for the BAF(batch annealing furnace) has been established in order to reduce energy consumption to imrpove productivity and stabilize the properties of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, changing annealing cycle time according to BAF temperature with time during heating and actual temperature measurements cold spot during soaking. The results of the temperature variation effect on the batch annealing are as follows. 1) Cooling rate is increasing gradually with increasing atmospheric gas flow, but heating rate is hardly increasing without atmospheric gas component. Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas and annealing cycle time is reduce to 2.7 times. 2) With enlarging the difference between furnace temperature and soaking temperature at the HNx BAF, heating time becomes short, but cooling time is indifferent. 3) If temperature difference of 300.deg. C in the temperature change of cold spot according to the annealing cycle control temperature, Hi-CON/H2BAF is interchanging at each other at 26hours, but HNxBAF at 50 hours. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1219 mm width coil must be 2.5 hours longer then that of 914mm width coil for the same coil weight at Hi-CON/H2BAF. But, it is necessary to make 2 hours longer at HNxBAF.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• Journal of the Korean Ceramic Society
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• v.43 no.9 s.292
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• pp.527-531
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• 2006

In order to study the influence of post-annealing treatment on the frequency characteristics of the Li doped ZnO(Li:ZnO) FBAR(Film Bulk Acoustic Resonator) device, we investigated the material and electrical properties of Li:ZnO films in the annealing temperature range from 300 to $500^{\circ}C$. In our samples, as annealing temperature was increased, Li:ZnO films showed the improvement of high c-axis orientation and resistance value with relieved stress and low surface roughness. In addition to, the return loss in the frequency property of fabricated FBAR was improved by annealing treatment from 24.9 to 29.8dB. From experimental results, the optimum post-annealing temperature for FBAR is $500^{\circ}C$ and it can obtain excellent Li:ZnO FBAR performance with stronger c-axis orientation, smoother surface, relieved stress, and lower loss factor.