• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.149-157
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• 2002

Spectral emissivity depends on the surface conditions of the materials. The mechanisms that affect the spectral emissivity in anodic oxide films on aluminum were investigated. The aluminum specimens were anodized in a sulfuric acid solution and the thickness of the resulting oxide film formed changed with the anodizing time. FT-IR spectrum analysis identified the anodic oxide film as boehmite ($Al_2$$O_3$.$H_2$O). Both the infrared emisivity and reflectivity of the anodized aluminum were affected by the structure of the anodic oxide film because Al-OH and Al-O-Al have a pronounced absorption band in the infrared region of the spectrum. The presence of an anodic oxide film on aluminum caused a rapid drop in the infrared reflectivity. An aluminum surface in the clean state had an emissivity of approximately 0.2. However, the infrared emissivity rapidly increased to 0.91 as the thickness of the anodic oxide film increased.

• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.36-42
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• 2020

In this study, two novel methods to measure the surface hardness of anodic oxide films on aluminum alloys are reported. The first method is to impregnate oil-based ink into pores in the anodic oxide film and then to clean the ink on the surface using ethanol, resulting in an impregnation of inks only inside of the pores in anodic oxide film. The second method is to coat the anodic oxide film surface with thin Au layer less than 0.1 ?. Both the ink-impregnating method and Au-coating method provided clear indentation marks on the anodic oxide film surface when it was indented using a pyramidal-diamond penetrator. Thus, Vickers hardness of anodic oxide films on aluminium alloy could be measured successfully and precisely from the anodic film surface. In addition, advantages and disadvantages of the ink-impregnating method and Au-coating method for the measurement of surface hardness of anodic oxide films are discussed.

• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.309-318
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• 2000

The 6063 Aluminium alloy were electrocolored and anodized at the same time in addition of $CoSO_4$, $FeSO_4$, in the electrolyte and investigated by AES/SAM. It was found that the thickness of anodic oxide film is increased linearly in DC type, and DC combined AC type, the more ratio of anodic Portion in AC, the more increased of anodic film thickness. The color of anodic film was changed from silver to yellow when the increase of the ratio of cathodic portion in AC. Also the increase of $CoSO_4$, $FeSO_4$ in the electrolyte, the coloring time is decreased. From the AES/SAM results, the element of anodic oxide film are Al,O and S. The result of depth profile, the most of the S distributed on the surface and the more S is in DC combined AC type than only DC type.

• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1340-1344
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• 1999

The electrochemical behavior of oxide layers on aluminium was studied using electrochemical impedance spectroscopy. Impedance spectra were taken at a compact and a porous oxide layer of Al. The anodic films on Al have a variable stoichiometry with gradual reduction of oxygen deficiency towards the oxide-electrolyte interface. Thus, the interpretation of impedance spectra for oxide layers is complicated, with the impedance of surface layers differing from those of ideal capacitors. This layer behavior with conductance gradients was caused by an inhomogeneous dielectric. The frequency response cannot be described by a single RC element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

• Journal of the Korean institute of surface engineering
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• v.12 no.3
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• pp.167-173
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• 1979

The structure of anodic aluminium oxide films formed in 2% oxalic asid at constant temperature was studied by the oid of the transmission and replica electron microscopy. Far the initial stage of oxidations, it is observed that pores are initiated from lattice defects as subgrain boundaries, and then spread radially. Some pores merge each other and the others cease to grow until the current density reaches to the steady state. The pore diameter and the cell size are proportional to the anodizing voltages, and it is considered that the pore initiation and growth are largely controlled by the field - assisted oxide dissolution.

• Journal of the Korean institute of surface engineering
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• v.17 no.3
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• pp.78-86
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• 1984

Hard anodic oxide film was investigated formed on pure aluminium with various temperature (30$^{\circ}-60^{\circ}C$), current densities (1.5-3.0A/$dm^2$) and concentrations(3-15g/l) of oxalic acid in 0.5M malic acid bath. The resulting characteristic of the anodic oxide film obtained were summarized as follows in the view point of physical and mechanical properties in relation with the above process variables. 1. The film thickness increased with oxalic acid concentration and bath temperature, while the reversed phenomena were obtained at a high concentration of oxalic acid and high temperature due to the severe dissolution of the anodic oxide film. 2. The hardness and the abrasion resistance were improved by lowering the addition of oxalic acid and the bath temperature. This feature was directly dependent on the porosity formed on the anodic oxide film. 3. The maximum hardness of anodic oxide film showed Hv 579 in the temperature of 30$^{\circ}C$ with the current density, 2.5A/$dm^2$ in the 0.5M malic acid bath mixed with 5g/l oxalic acid.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.69-70
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• 1999

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.112.2-112
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.130-131
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• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.106-107
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• 2007

We fabricated anodic aluminium oxides (AAO) on Si and sapphire substrates from the electrochemical reactions of thin AI films in an aqueous solution of oxalic acid. The thin AI films have deposited on Si and Sapphire substructure by using E-beam evaporation and thermal evaporation, respectively. The formation of AAO structures has investigated from FE-SEM measurement image and showed randomly distributed phase of nanoholes instead of the periodic lattice of photonic crystals. The AAO structure on sapphire shows the double layers of nanoholes.