• International Journal of Aeronautical and Space Sciences
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• v.15 no.3
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• pp.320-334
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• 2014

Over the last two decades, numerous experimental and numerical efforts have examined physical phenomena in plasma discharge devices. The physical mechanisms that govern the anomalous electron diffusion from the cathode to the anode in the Hall Effect Thruster (HET) are not fully understood. This work used 1-D numerical method to improve our understanding and gain insight into the effect of the anomalous electron diffusion in the HET. To this end, numerical solutions are compared with various experimental HET performance measurements and the effects of anomalous electron diffusion are analyzed. The relationships between the anomalous electron diffusion and important parameters of the HET are also studied quantitatively. The work identifies the cathode mass flow rate fraction, radial magnetic field distribution, and discharge voltage as significant factors that affect anomalous electron diffusion. Additionally, the study demonstrates a computational process to determine the radial magnetic field distribution required to achieve specific thruster performance goals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1076-1079
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• 2001

An anolmalous magnetoresistance effect has been theoretically studied at very low temperatures for composite normal metal conductors. This anomalous behavior is due to transverse Hall currents in the composite which would result in increased losses and higher effective resistance for the composite conductor. In this paper, transverse current flow and effective resistance with Cu-Al conductor configuration were analyzed using FEM(finite element method) for predicting the Hall losses to be resulted in anomalous magnetoresistance effect. And they are plotted three dimensionally to be visualized.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.408-410
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• 1997

An anomalous magnetoresistance effect has been observed at very low temperatures for composite normal metal conductors. This anomalous behavior is due to transverse Hall currents in the composite which would result in increased $I^2R$ losses and a higher effective resistance for the composite conductor. In this paper, transverse current flow and effective resistance of Cu-Al double-strip was analyzed using finite element method for predicting the Hall losses to be resulted in anomalous magnetoresistance effect, and then be able to visualized.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.48-52
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• 2019

Recently, many studies have been reported on the magnetoresistance and Hall effect of REBCO thin films and bulk. The voltage interferes quench detection of high-temperature superconducting magnet and generates leakage current in no insulation high-temperature superconducting coil. Therefore, in this paper, experiments on magnetoresistance and Hall effect of commercial YBCO and GdBCO tapes have been carried out. As a result, anomalous voltages expected for the magnetoresistance and Hall effect of REBCO tapes were observed and analyzed. In addition, the voltage characteristics of REBCO have been identified, and the Hall coefficient are calculated for use in high magnetic field magnet applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.241-242
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• 2004

• Journal of Magnetics
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• v.9 no.4
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• pp.97-100
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• 2004

In the present work exchange coupling between ultrathin Fe ($8{\AA}$) and Tb ($12{\AA}$) layers separated by Au spacer of varied thickness ($3-20{\AA}$) was studied. Anomalous Hall effect measurements showed weakly damped oscillating dependence of the Hall conductivity as a function of Au spacer thickness. Disagreement of the observed damping with the RKKY model of interlayer exchange coupling was explained by the influence of external magnetic field on the behaviour of exchange coupling oscillations. It was confirmed by Hall-like effect measurements at zero applied magnetic field and also illustrated by corresponding estimations.

• Journal of the Korean Magnetics Society
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• v.5 no.6
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• pp.952-955
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• 1995

It is well kown that the side-jump effect, originated from the spin-orbit scatterring of the transport electrons at the site of spin-orbit scatterers, is the reason for the anomalus Hall resistivity which is proportional to the magnetization. Our recent magnetization study implied that abundant ferromagnetic Fe clusters made of for Fe ions dominate the temperature and field dependence of magnetization at high field and low temperature regime for a paramagnetic $Fe_{0.33}Zr_{0.67}$ alloy. We measured the Hall resistivity of this alloy and observed that the Hall resistivity followed the M-H cure at low temperature, and the Hall coefficients at moderate temperatures were proportional to the magnetic susceptibility. We explain the behavior of Hall resistivity with the change of field and temperature in terms of side-jump effect.

• Journal of Magnetics
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• v.18 no.3
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• pp.225-229
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• 2013

We report a measurement for the anomalous Nernst effects induced by a temperature gradient in [CoSiB/Pt] multilayer films with perpendicular magnetic anisotropy. The Nernst voltage shows a characteristic hysteresis which reflects the magnetization of the film as in the case of the anomalous Hall effects. With a local heating geometry, we also measure the dependence of the anomalous Nernst voltage on the distance d from the heating element. It is roughly proportional to $1/d^{1.3}$, which can be conjectured from the expected temperature gradient along the sample from the heat equation.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• Journal of Magnetics
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• v.10 no.3
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• pp.95-98
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• 2005

We report hole-induced ferromagnetism in diluted magnetic semiconductor $Zn_{0.99}Mn_{0.01}$ films grown on $SiO_2/Si$ substrates by reactive sputtering. The p-type conduction with hole concentration over $10^{18}\;cm^{-3}$ is achieved by P doping followed by rapid thermal annealing at $800^{\circ}C$ in a $N_2$ atmosphere. The p-type $Zn_{0.99}Mn_{0.01}O:P$ is carefully examined by x-ray diffraction and transmission electron microscopy. The magnetic measurements for $p-Zn_{0.99}Mn_{0.01}O:P$ clearly reveal ferromagnetic characteristics with a Curie temperature above room temperature, whereas those for $n-Zn_{0.99}Mn_{0.01}O:P$ show paramagnetic behavior. The anomalous Hall effect at room temperature is observed for the p-type film. This result strongly supports hole-induced room temperature ferromagnetism in $p-Zn_{0.99}Mn_{0.01}O:P$.