• Title/Summary/Keyword: Au film

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Characterization of Electrochromic Properties of Au Nanoparticles Incorporated Poly (3, 4-ethylenedioxythiphene) Film (Au 나노입자가 함침된 Poly (3, 4-ethylenedioxythiphene) 고분자 박막의 전기변색 특성연구)

  • Lee, Jong-Seok;Koo, Kyoung-Hoe;Park, Hyung-Ho
    • Korean Journal of Materials Research
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    • v.19 no.10
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    • pp.527-532
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    • 2009
  • The electrochromic properties of Au nanoparticles (NPs) incorporating poly (3, 4-ethylenedioxythiphene) (PEDOT) film were investigated. Trisodium citrate was used for stabilizing Au NPs to control the size. The capping molecules of the Au nanoparticles were exchanged from citrate to 2-mercaptoethanol (2-ME). Water was removed by centrifuge and Au NPs were redispersed in methanol (MeOH). Finally, we obtained ca. 11.7 nm diameter of Au NPs. The effects of 0.15 at% of Au NPs incorporation on the optical, electrical, and eletrochromic properties of PEDOT films were investigated. The electrical property and switching speed of Au/PEDOT film was slightly improved over that of PEDOT film because Au NPs play a hopping site role and affect packing density of the PEDOT chain. Through the ultra violet-visible spectra of PEDOT and Au/PEDOT films at -0.7 V (vs Ag/AgCl), blue shift of maximum absorption peak was observed from PEDOT (585.4 nm) to Au/PEDOT (572.2 nm) due to a shortening of conjugated length of PEDOT. The Au NPs interfered with the degree of conjugation and the maximum absorption peak was shifted to shorter wavelength.

Comparison of Deposition Behavior and Properties of Cyanide-free Electroless Au Plating on Various Underlayer Electroless Ni-P films

  • Kim, Dong-Huyn
    • Journal of the Korean institute of surface engineering
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    • v.55 no.4
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    • pp.202-214
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    • 2022
  • Internal connections between device, package and external terminals for connecting packaging and printed circuit board are normally manufactured by electroless Ni-P plating followed by immersion Au plating (ENIG process) to ensure the connection reliability. In this study, a new non-cyanide-based immersion and electroless Au plating solutions using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated on different underlayer electroless Ni-P plating layers. As a result, it was confirmed that the deposition behavior and film properties of electroless Au plating are affected by grain size and impurity of the electroless Ni-P film, which is used as the plating underlayer. Au plating on the electroless Ni-P plating film with a dense surface structure showed the highest bonding strength. In addition, the electroless Au plating film on the Ni-P plating film has a smaller particle size exhibited higher bonding strength than that on the large particle size.

Stretchable Deformation-Resistance Characteristics of Metal Thin Films for Stretchable Interconnect Applications I. Effects of a Parylene F Intermediate Layer and PDMS Substrate Swelling (신축 전자패키지 배선용 금속박막의 신축변형-저항 특성 I. Parylene F 중간층 및 PDMS 기판의 Swelling에 의한 영향)

  • Park, Donghyun;Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.27-34
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    • 2017
  • We investigated the feasibility of parylene F usage as an intermediate layer between a polydimethylsiloxane (PDMS) substrate and an Au thin-film interconnect as well as the swelling effect of PDMS substrate on the stretchable deformability of an Au thin film. The 150-nm-thick Au film, which was sputtered on a PDMS substrate without a parylene F layer, exhibited an initial resistance of $11.7{\Omega}$ and an overflow of its resistance at a tensile strain of 12.5%. On the other hand, the Au film, which was formed with a 150-nm-thick parylene F layer, revealed an much improved resistance characteristics: $1.21{\Omega}$ as its initial resistance and $246{\Omega}$ at its 30% elongation state. With swelling of PDMS substrate, the resistance of an Au film substantially decreased to $14.4{\Omega}$ at 30% tensile strain.

Synthesis of Au Nanowires Using S-L-S Mechanism (S-L-S 성장기구를 이용한 양질의 골드 나노선 합성)

  • No, Im-Jun;Kim, Sung-Hyun;Shin, Paik-Kyun;Cho, Jin-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.11
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    • pp.922-925
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    • 2012
  • Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.

Eutectic Temperature Effect on Au Thin Film for the Formation of Si Nanostructures by Hot Wire Chemical Vapor Deposition

  • Ji, Hyung Yong;Parida, Bhaskar;Park, Seungil;Kim, MyeongJun;Peck, Jong Hyeon;Kim, Keunjoo
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.63-68
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    • 2013
  • We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

Properties of the Dye Sensitized Solar Cell with Localized Surface Plasmon Resonance Inducing Au Nano Thin Films

  • Noh, Yunyoung;Kim, Kwangbae;Choi, Minkyoung;Song, Ohsung
    • Korean Journal of Materials Research
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    • v.26 no.8
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    • pp.417-421
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    • 2016
  • We improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC) by preparing a working electrode (WE) with localized surface plasmon resonance (LSPR) by inducing Au thin films with thickness of 0.0 to 5.0 nm, deposited via sputtering. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the microstructure of the blocking layer (BL) of the Au thin films. Micro-Raman measurement was employed to confirm the LSPR effect, and a solar simulator and potentiostat were used to evaluate the photovoltaic properties, including the impedance and the I-V of the DSSC of the Au thin films. The results of the microstructural analysis confirmed that nano-sized Au agglomerates were present at certain thicknesses. The photovoltaic results show that the ECE reached a value of 5.34% with a 1-nm thick-Au thin film compared to the value of 5.15 % without the Au thin film. This improvement was a result of the increase in the LSPR of the $TiO_2$ layer that resulted from the Au thin film coating. Our results imply that the ECE of a DSSC may be improved by coating with a proper thickness of Au thin film on the BL.

A Comparative Study of The Electrical Properties of Arachidic Acid L-B Film in the Al/LB/Al and Au/LB/Au Electrode Structures (Al/LB/Al, Au/LB/AU 전극구조에서 Arachidic Acid L-B막의 전기적 특성에 관한 비교 연구)

  • 오세중;김형석;이창희;김태완;김정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.112-115
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    • 1993
  • We have studied a property of arachidic acid Langmuir-Blodgett films at room temperature with two different electrodes ; Al/LB/Al and Au/LB/Au. Since a natural oxide layer is formed on top of the Al electrode, the appropriate structure of AL/LB/Al is Al/Al$_2$O$_3$/LB/Al. To obtain a property of Pure LB film, Aua/LB/Au structure was made. In Al/Al$_2$O$_3$/LB/Al structure, a conductivity of 3.7${\times}$10$\^$-14/ S/cm was obtained by using current-voltage(I-V) characteristics. In Au/LB/AU structure, however, I-V curve was not able to be measured because of short current even in 51 layers of the LB film. A status of defects in the film was confirmed by copper decoration method. We have clearly seen a rather big difference of defect in those two above structures.

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An ITO/Au/ITO Thin Film Gas Sensor for Methanol Detection at Room Temperature

  • Jeong, Cheol-Woo;Shin, Chang-Ho;Kim, Dae-Il;Chae, Joo-Hyun;Kim, Yu-Sung
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.2
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    • pp.77-80
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    • 2010
  • Indium tin oxide (ITO) films with a 5 nm thick Au interlayer were prepared on glass substrates. The effects of the Au interlayer on the gas sensitivity for detecting methanol vapors were investigated at room temperature. The conductivity of the film sensor increased upon exposure to methanol vapor and the sensitivity also increased proportionally with the methanol vapor concentration. In terms of the sensitivity measurements, the ITO film sensor with an Au interlayer shows a higher sensitivity than that of the conventional ITO film sensor. This approach is promising in gaining improvement in the performance of ITO gas sensors used for the detection of methanol vapor at room temperature.

Fabrication and Properties of Au fine Particles Doped ZrO2 Thin Films by the Sol-gel Method (졸-겔법에 의한 Au 미립자 분산 ZrO2 박막의 제조와 특성)

  • 이승민;문종수
    • Journal of the Korean Ceramic Society
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    • v.40 no.5
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    • pp.475-480
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    • 2003
  • Nanocomposite of Au doped ZrO$_2$ films was prepared, which could be used as non-linear optic materials, selective absorption and transmission films. After heat treatment of prepared thin film by dip-coating method, the characteristics were investigated by X-ray diffraction, UV-VIS Spectrometer, Atomic Force Microscopy (AFM) and Scanning Electron Microscope (SEM). Film thickness was about 150 nm, the Au particle size was 15~35 nm. The thin film had a smooth surface roughness about 1.06 nm. Nonlinearity optics was found that films showed absorption peak at 600~650 nm visible region by plasma resonance of Au metal particles.

INVESTIGATION OF ENERGETIC DEPOSITION OF Au/Au (001) THIN FILMS BY COMPUTER SIMULATION

  • Zhang, Q. Y.;Pan, Z. Y.;Zhao, G. O.
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.183-189
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    • 1998
  • A new computer simulation method for film growth, the kinetic Monte Carlo simulation in combination with the results obtained from molecular dynamics simulation for the transient process induced by deposited atoms, was developed. The behavior of energetic atom in Au/Au(100) thin film deposition was investigated by the method. The atomistic mechanism of energetic atom deposition that led to the smoothness enhancement and the relationship between the role of transient process and film growth mechanism were discussed. We found that energetic atoms cannot affect the film growth mode in layer-by-layer at high temperature. However, at temperature of film growth in 3-dimensional mode and in quasi-two-dimensional mode, energetic atoms can enhance the smoothness of film surface. The enhancement of smoothness is caused by the transient mobility of energetic atoms and the suppression for the formation of 3-dimensional islands.

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