• Korean Journal of Materials Research
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• v.17 no.4
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• pp.207-214
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• 2007

We fabricated thermally-evaporated 10 -Ni/(poly)Si and 10 -Ni/1 -Ir/(poly)Si structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required for annealing. Silicides underwent rapid at the temperatures of 300-1200 for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope(TEM) and an Auger depth profile scope were employed for the determination of vertical section structure and thickness. Nickel silicides with iridium on single crystal silicon actives and polycrystalline silicon gates shoed low resistance up to 1000 and 800, respectively, while the conventional nickle monosilicide showed low resistance below 700. Through TEM analysis, we confirmed that a uniform, 20 -thick silicide layer formed on the single-crystal silicon substrate for the Ir-inserted case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of 1000. Auger depth profile analysis also supports the presence of thismixed microstructure. Our result implies that our newly proposed iridium-added NiSi process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.314.2-314.2
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.66-66
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• 2000

Electrochromism이란 기전력 방향에 의한 가역적으로 색이 변하는 현상을 말하며, 열린 회로 기억성을 가지며 소비전력이 적고, 우수한 착색 효율을 갖는 등 여러 가지 유용성 때문에 디스플레이 및 전기적 착색 유리창에의 기술적 적용 가능성을 보이고 있다. 본 연구에서는 가장 우수한 일렉트로크로믹 특성을 내는 것으로 알려진 WO3 박막과 대향 전극으로 V2O5 박막을 사용하였다. 이들 박막은 알칼리 이온 주입물질이며, coloration.bleaching상태에서 광학 밀도가 크고, 내구성이 좋으며, 작은 비용으로 재료를 사용할 수 있다. 그리고 더 우수한 장점으로 부각되는 대면적의 코팅의 매력적인 기술인 졸겔법으로 제조 가능한 특성을 가지고 있다. 졸겔법 및 진공증착법으로 박막을 제조하고, 박막산화 및 수명저하 등의 위험이 적은 리튬이온을 이용하여 소자를 제작한 후 일렉트로크로믹 특성을 조사하고, 우수한 소자의 제조조건을 얻고자 하였다. 측정결과 졸겔법으로 제조된 WO3 박막과 V2O5 박막을 수증기 분위기에서 50$0^{\circ}C$로 1시간 열처리한 경우 가장 우수한 투과 변화율을 나타내었다. 정상전압인 2 volt보다 높은 3 volt로 cyclic voltamogram을 측정하는 과정에서 정.역방향 동작을 거듭할수록 peak이 크게 감소하는 현상을 발견하였으며, 양이온의 흐름에 의해 물질의 이동이 발생할 것이라는 판단아래 Auger depth profile을 측정한 결과 WO3막의 텅스텐과 ITO막의 인듐이 상호 확산하는 것을 관찰할 수 있었다. 이를 방지하기 위해 수백 의 텅스텐 박막을 WO3 막 위에 증착한 후 cyclic voltamogram과 Auger depth profile을 측정한 결과, cyclic voltamogram의 peak의 감소량이 1/10이하로 감호하였으며, 리튬이온의 흐름에 의한 인듐과 텅스텐의 이동을 효과적으로 방지할 수 있었다. 따라서 텅스텐 확산방지막의 삽입이 소자의 수명을 향상시킬 수 있는 효과적인 방법이라고 사료된다.

• Analytical Science and Technology
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• v.6 no.2
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• pp.217-223
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• 1993

Thin films of the Au/Cr, Au/Ni/Cr and Au/Pd/Cr systems were deposited on alumina substrates at ambient temperature and $250^{\circ}C$ in a high-vacuum resistance heating evaporator and annealed at $300^{\circ}C$, $450^{\circ}C$ and $600^{\circ}C$ for 1 hour in air, respectively. The film thicknesses of Au, Ni(or pd), and Cr were $1000{\AA}$, $300{\AA}$, and $50{\AA}$, respectively. The substrate temperature during deposition and the post-deposition annealing temperature affected the sheet resistance of thin-films due to the inter-diffusion of each layer. As a result of Auger depth profile analysis, in the Au/Cr system Cr already diffused out to Au surface during deposition at the substrate temperature of $250^{\circ}C$ and Au distribution changed after heat treatment. In the Au/Ni/Cr and Au/Pd/Cr systems, diffusion phenomena of Ni and Pd were found and especially Ni (approximately 45 at.%) diffused out to Au surface and oxidized.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.133-138
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• 2002

The growth of Au films grown on a Si(100)-2x1 surface and Si films on a Ge(100)-2x1 substrate is studied using Positron-annihilation induced Auger Electron Spectroscopy(PAES), Electron induced Auger Electron Spectroscopy(EAES), and Low Energy Electron Diffraction(LEED). Previous work has shown that PAES is almost exclusively sensitive to the top-most atomic layer due to the trapping of positrons in an image potential well just outside the surface before annihilation. This surface specificity is exploited to profile the surface atomic concentrations during the growth of Au on Si(100) and Si on Ge(100) and EAES provides concentrations averaged over the top 3-10 atomic layers simultaneously. The difference in the probe-depth makes us possible to use PAES and EAES in a complementary fashion to estimate the surface and near surface concentration profiles. The results show that (i) the intermixing of Au and Si atoms occurs during the room temperature deposition, (ii) the segregated Ge layer is observed onto the Si layers deposited at 300k. In addition, the prior adsorption of hydrogen prevents the segregation of Ge on top of the deposited Si and that the hydrogen adsorption is useful in growing a thermally stable structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.63-70
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• 1989

The ion beam extracted from the AuGe liquid metal ion source was implanted into GaAs substrate. The surface composition and the structure of ion implanted samples were investigated by AES, RHEED, SEM and EPMA. The depth profiles measured by AES were compared with the results of Monte Carlo simulation based on the two-body collision. As the results of AuGe ion implantation the preferential sputtering of As were revealed by AES and EPMA, and the outdiffusion of Ga and Ge was investigated by 300$^{circ}C$ annealing. The Au and Ge depth profiles measured by AES agreed with the results of Monte Carlo simulation based on the two-body collision.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.163-167
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• 2001

The rotation of uniaxial anisotropy field of 700 ${\AA}$ thick sputtered NiFe thin film due to magnetic annealing was investigated. NiFe film was annealed in a magnetic field which is perpendicular to the initial induced uniaxial anisotropy field. The NiFe film becomes nearly isotropic after 1 hour annealing at 160 $^{\circ}C$. With increase of annealing temperature over 160 $^{\circ}C$, the film gets uniaxial anisotropy field again. An abrupt increase of H$\sub$c/ was observed with annealing temperature over 400 $^{\circ}C$. The X-ray diffraction analysis and Auger electron spectroscopy with Ar ion etching showed extensive grain growth in NiFe film with (111) texturing and interdiffusion with adjacent Au electrode layer by 400 $^{\circ}C$ magnetic annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.308-317
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/(poly)Si and 10 nm-$Ni_{0.5}Co_{0.5}$/(Poly)Si structures to investigate the microstructure of nickel silicides at the elevated temperatures required lot annealing. Silicides underwent rapid annealing at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of both the single crystal silicon actives and the polycrystalline silicon gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profilescope were employed for the determination of vortical microstructure and thickness. Nickel silicides with cobalt on single crystal silicon actives and polycrystalline silicon gates showed low resistance up to $1100^{\circ}C$ and $900^{\circ}C$, respectively, while the conventional nickle monosilicide showed low resistance below $700^{\circ}C$. Through TEM analysis, we confirmed that a uniform, $10{\sim}15 nm$-thick silicide layer formed on the single-crystal silicon substrate for the Co-alloyed case while a non-uniform, agglomerated layer was observed for the conventional nickel silicide. On the polycrystalline silicon substrate, we confirmed that the conventional nickel silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo-alloy composite silicide process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.240-245
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• 1996

Non-ozone layer destructive Chlorofluorocarbon(CFC) altematives(CHCIF$_{2}$ and $C_{2}$H$_{2}$F$_{4}$) have been initially used for laser-induced thenrmochemical etching of GaAs. High etching rate up to 188.mu.m/sec and an aspect ratio of 2.7 have been achieved by a single scan of laser beam, respectively. The etching rate at constant ambient gas pressure was found to saturate for beam power. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron microscopy(AES). Etched profile, depth and width were observed by scanning electron microscope(SEM).

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.