• 제목/요약/키워드: BAW resonator

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고분자 압전필름을 이용한 BAW 공진기의 주팍수 특성에 관한 연구 (A Study on Frequency Properties of Bulk Acoustic Wave Resonators using PVDF)

  • 정영학;김응권;윤창진;송준태
    • 한국전기전자재료학회논문지
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    • 제16권12호
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    • pp.1077-1079
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    • 2003
  • This paper describes the development of bulk acoustic wave (BAW) resonators using a PolyVinyliDene Fluoride (PVDF). The resonators have an air gap between a substrate for acoustic isolation without surface micromachining. We measured the resonance frequency and the input reflection coefficient (S$\sub$11/) of resonators using vector network analyzer. The fundamental resonance in this experimental result was measured at 1.4 ㎓ with a return loss of -23.2 ㏈. We can confirm a possibility of resonator application as using a PVDF because it can fabricate the resonator without etching process.

고분자 압전필름을 이용한 Bulk Acoustic Wave Resonator의 주파수 특성에 관한 연구 (A Study on Frequency Property of Bulk Acoustic Wave Resonator Using PVDF)

  • 정영학;김응권;윤창진;이규일;이종덕;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.673-676
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    • 2003
  • This paper describes the modeling and experimental results for Bulk Acoustic Wave(BAW) Resonator using PolyVinyliDene Fluoride(PVDF). We measured the input reflection coefficient ($S_{11}$) of resonators using vector network analyzer and experimental results were measured fundamental resonance at 2.3 GHz with a return loss of -29 dB. Because of fabricated resonator without etching process, we can confirm a possibility of resonator application as using a PVDF.

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Balanced RF Duplexer with Low Interference Using Hybrid BAW Resonators for LTE Application

  • Shin, Jea-Shik;Song, Insang;Kim, Chul-Soo;Lee, Moon-Chul;Son, Sang Uk;Kim, Duck-Hwan;Park, Ho-Soo;Hwang, Sungwoo;Rieh, Jae-Sung
    • ETRI Journal
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    • 제36권2호
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    • pp.317-320
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    • 2014
  • A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long-Term Evolution band-7 duplexer should be designed to prevent the co-existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice- and ladder-type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance-tounbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as $2.0mm{\times}1.6mm$. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to $-16.9ppm/^{\circ}C$.

Flexible Engineering Tool for Radiofrequency Parameter Identification of RF-MEMS BAW Filters

  • Mabrouk, Mohamed;Boujemaa, Mohamed-Ali;Choubani, Fethi
    • ETRI Journal
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    • 제38권5호
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    • pp.988-995
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    • 2016
  • In this paper, we present a new specific and customized interface tool with parameter identification of Modified Butterworth-Van Dyke models for ladder bulk acoustic wave filters. The aforementioned tool is easy to use and flexible because it allows simulations and reengineering to be conducted in an application. A modular design approach is applied to simplify the extension of the proposed tool for different topologies. The proposed tool was validated using measurements from an aluminum-nitride based ladder BAW filter dedicated to the frequency ranges of the Universal Mobile Telecommunications Service and standards and Wideband Code Division Multiple Access.

A Study on Configuration of Extremely Low Phase Noise Oscillator Circuit

  • Sakuta, Yukinori;Arai, Yuji;Sekine, Yoshifumi
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1196-1199
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    • 2002
  • The low phase noise frequency source to be used for measurements and so on realizes by oscillator having highly output signal power against output noise power. SAW devices can be used by high power than BAW devices. So we examine on configuration of SAW oscillator circuits with the power gain. In this paper we shall discuss a configuration of oscillator circuit to obtain an extremely low phase noise and an oscillator operating at a non-reactive frequency of SAW resonator.

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FBAR 소자제작을 위한 ZnO 박막 증착 및 특성에 대한 연구

  • 강상원;김선욱;임승만;김수길;신영화
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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    • pp.54-58
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    • 2003
  • 본 연구에서는 $SiO_2/Si$ 기판 위에 $1.1\mu\textrm{m}$ 두께의 ZRO 압전층을 다양한 조건 하에서 증착하고, 그 특성을 분석하고, film bulk acoustic wave resonator 소자에 적용하였다. 증착조건으로 $Ar/O_2$ 유량비를 25-75 %로 변화시켰으며, working pressure는 3~15 mtorr, RF power는 213~300 W로 변화시켜가며 실험을 하였다. 증착된 ZnO 박막은 XRD (X-ray diffractomter)와 SEM (scanning electron microscopy)을 통해 특성이 분석되었다. LFE모드의 BAW 공진기는 $50\times50\mu\textrm{m}^2$ 공진면적을 가지며, $W/SiO_2$의 5층 Bragg reflector와 상하부 전극으로 $1800{\AA}$의 Al-3% Cu, 그리고 $1.4\mu\textrm{m}$ 두께의 ZnO 압전박막으로 구성되었다. 2.128-2.151 GHz 주파수 사이에서 공진이 일어났으며, Q factor는 400으로 측정되었다.

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GROWTH AND CHARACTERIZATION OF $La_3Ga_5SiO_{14}$ SINGLE CRYSTALS BY THE FLOATING ZONE METHOD

  • Yoon, Won-Ki;Auh, Keun-Ho
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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    • pp.253-269
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    • 1999
  • The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

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