• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.779-784
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• 2001

In this work, we studied the characteristics of nitride films for the optimization of PMD(pro-metal dielectric) linear process, which can be applied to the recent semiconductor manufacturing process. We split the deposit condition of nitride films into four parts such as PO(protect overcoat) nitride, baseline, low hydrogen and high stress and low hydrogen, respectively. We tried to find out correlation between BPSG deposition and densification. In order to analyze the changes of Si-H and Si-NH-Si bonding density, we used FTIR area method. We also investigated the crack generation on wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation to judge whether the deposited films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.38-41
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• 2001

In this work, we have been studied the characteristics of each nitride film for the optimization of PMD(pre-metal dielectric) liner nitride process, which can applicable in the recent semiconductor manufacturing process. The deposition conditions of nitride film were splited by PO (protect overcoat) nitride, baseline, low hydrogen, high stress and low hydrogen, respectively. And also we tried to catch hold of correlation between BPSG(boro-phospho silicate glass) deposition and densification. Especially, we used FTIR area method for the analysis of density change of Si-H bonding and Si-NH-Si bonding, which decides the characteristics of nitride film. To judge whether the deposited films were safe or not, we investigated the crack generation of wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1620-1621
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• 2000

본 실험에서는 PMD Liner Nitride 공정의 최적화의 일환으로 현재 반도체 제조 공정에서 적용하고 있는 Nitride막들의 특성을 비교 분석함과 더불어 연관 공정인 BPSG 증착 및 Densification과의 관련 여부를 파악하기 위한 시도를 하였다. 특히 Nitride 박막 특성을 결정하는 중요한 요소인 Si-H 결합과 Si-NH-Si 결합의 농도 변화 분석을 위하여 FTIR Area 분석법을 이용하였다. 또한 증착된 Film의 안정성 여부를 판단하기 위하여 발생 가능한 정도의 RF Power 흔들림에 대한 Nitride 막의 Stress 변화 정도를 측정하였다.