• Title/Summary/Keyword: Bit Array

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Beam Control Method of Multiple Array Antenna Using The Modified Genetic Algorithm (변형된 유전자 알고리즘을 이용한 Multiple Array 안테나의 빔 제어방식)

  • Hyun, Kyo-Hwan;Jung, Kyung-Kwon;Eom, Ki-Hwan
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.44 no.2 s.314
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    • pp.39-45
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    • 2007
  • This paper presents a novel scheme that quickly searches for the sweet spot of multiple array antennas, and locks on to it for high-speed millimeter wavelength transmissions, when communications to another antenna array are disconnected. The proposed method utilizes a modified genetic algorithm, which selects a superior initial group through preprocessing in order to solve the local solution in agenetic algorithm. TDD (Time Division Duplex) is utilized as the transfer method and data controller for the antenna. Once the initial communication is completed for the specific number of individuals, no longer antenna's data will be transmitted until each station processes GA in order to produce the next generation. After reproduction, individuals of the next generation become the data, and communication between each station is made again. Simulation results of 1:1, 1:2, 1:5 array antennas confirmed the efficiency of the proposed method. The 16bit split is 8bit, but it has similar performance as 16bit gene.

Wear Leveling Technique using Bit Array and Bit Set Threshold for Flash Memory

  • Kim, Seon Hwan;Kwak, Jong Wook;Park, Chang-Hyeon
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.11
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    • pp.1-8
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    • 2015
  • Flash memory has advantages in that it is fast access speed, low-power, and low-price. Therefore, they are widely used in electronics industry sectors. However, the flash memory has weak points, which are the limited number of erase operations and non-in-place update problem. To overcome the limited number of erase operations, many wear leveling techniques are studied. They use many tables storing information such as erase count of blocks, hot and cold block indicators, reference count of pages, and so on. These tables occupy some space of main memory for the wear leveling techniques. Accordingly, they are not appropriate for low-power devices limited main memory. In order to resolve it, a wear leveling technique using bit array and Bit Set Threshold (BST) for flash memory. The proposing technique reduces the used space of main memory using a bit array table, which saves the history of block erase operations. To enhance accuracy of cold block information, we use BST, which is calculated by using the number of invalid pages of the blocks in a one-to-many mode, where one bit is related to many blocks. The performance results illustrate that the proposed wear leveling technique improve life time of flash memory to about 6%, compared with previous wear leveling techniques using a bit array table in our experiment.

Realization of Two-bit Operation by Bulk-biased Programming Technique in SONOS NOR Array with Common Source Lines

  • An, Ho-Myoung;Seo, Kwang-Yell;Kim, Joo-Yeon;Kim, Byung-Cheul
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.4
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    • pp.180-183
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    • 2006
  • We report for the first time two-bit operational characteristics of a high-density NOR-type polysilicon-oxide-nitride-oxide-silicon (SONOS) array with common source line (CSL). An undesired disturbance, especially drain disturbance, in the NOR array with CSL comes from the two-bit-per-cell operation. To solve this problem, we propose an efficient bulk-biased programming technique. In this technique, a bulk bias is additionally applied to the substrate of memory cell for decreasing the electric field between nitride layer and drain region. The proposed programming technique shows free of drain disturbance characteristics. As a result, we have accomplished reliable two-bit SONOS array by employing the proposed programming technique.

A Study of 0.5-bit Resolution for True-Time Delay of Phased-Array Antenna System

  • Cha, Junwoo;Park, Youngcheol
    • International journal of advanced smart convergence
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    • v.11 no.4
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    • pp.96-103
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    • 2022
  • This paper presents the analysis of increasing the resolution of True-Time-Delay (TTD) by 0.5-bit for phased-array antenna system which is one of the Multiple-Input and Multiple Output (MIMO) technologies. For the analysis, a 5.5-bit True-Time Delay (TTD) integrated circuit is designed and analyzed in terms of beam steering performance. In order to increase the number of effective bits, the designed 5.5-bit TTD uses Single Pole Triple Throw (SP3T) and Double Pole Triple Throw (DP3T) switches, and this method can minimize the circuit area by inserting the minimum time delay of 0.5-bit. Furthermore, the circuit mostly maintains the performance of the circuit with the fully added bits. The idea of adding 0.5-bit is verified by analyzing the relation between the number of bits and array elements. The 5.5-bit TTD is designed using 0.18 ㎛ RF CMOS process and the estimated size of the designed circuit excluding the pad is 0.57×1.53 mm2. In contrast to the conventional phase shifter which has distortion of scanning angle known as beam squint phenomenon, the proposed TTD circuit has constant time delays for all states across a wide frequency range of 4 - 20 GHz with minimized power consumption. The minimum time delay is designed to have 1.1 ps and 2.2 ps for the 0.5-bit option and the normal 1-bit option, respectively. A simulation for beam patterns where the 10 phased-array antenna is assumed at 10 GHz confirms that the 0.5-bit concept suppresses the pointing error and the relative power error by up to 1.5 degrees and 80 mW, respectively, compared to the conventional 5-bit TTD circuit.

Implementation of The LED illuminance control IP based on 8bit RISC Processor (8bit RISC 프로세서를 이용한 LED Array의 조도제어 IP 구현)

  • Oh, Eun-Tack;Moon, Chul-Hong
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.603-604
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    • 2008
  • This paper implemented The LED illuminance control IP based on 8bit RISC Processor. 8bit RISC Processor designed hardware interrupts, an interface for serial communications, a timer system with compare-capture-reload resources and a watchdog timer. LED Array consists of Red, Green, Blue, White and Warm White. The illuminance control IP is used to LED Board control with 8bit data.

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Design of a Bit-Level Super-Systolic Array (비트 수준 슈퍼 시스톨릭 어레이의 설계)

  • Lee Jae-Jin;Song Gi-Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.12
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    • pp.45-52
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    • 2005
  • A systolic array formed by interconnecting a set of identical data-processing cells in a uniform manner is a combination of an algorithm and a circuit that implements it, and is closely related conceptually to arithmetic pipeline. High-performance computation on a large array of cells has been an important feature of systolic array. To achieve even higher degree of concurrency, it is desirable to make cells of systolic array themselves systolic array as well. The structure of systolic array with its cells consisting of another systolic array is to be called super-systolic array. This paper proposes a scalable bit-level super-systolic amy which can be adopted in the VLSI design including regular interconnection and functional primitives that are typical for a systolic architecture. This architecture is focused on highly regular computational structures that avoids the need for a large number of global interconnection required in general VLSI implementation. A bit-level super-systolic FIR filter is selected as an example of bit-level super-systolic array. The derived bit-level super-systolic FIR filter has been modeled and simulated in RT level using VHDL, then synthesized using Synopsys Design Compiler based on Hynix $0.35{\mu}m$ cell library. Compared conventional word-level systolic array, the newly proposed bit-level super-systolic arrays are efficient when it comes to area and throughput.

Design of Novel OTP Unit Bit and ROM Using Standard CMOS Gate Oxide Antifuse (표준 CMOS 게이트 산화막 안티퓨즈를 이용한 새로운 OTP 단위 비트와 ROM 설계)

  • Shin, Chang-Hee;Kwon, Oh-Kyong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.5
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    • pp.9-14
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    • 2009
  • In this paper, we proposed a novel OTP unit bit of CMOS gate oxide antifuse using the standard CMOS process without additional process. The proposed OTP unit bit is composed of 3 transistors including an NMOS gate oxide antifuse and a sense amplifier of inverter type. The layout area of the proposed OTP unit bit is $22{\mu}m^2$ similar to a conventional OTP unit bit. The programming time of the proposed OTP unit bit is 3.6msec that is improved than that of the conventional OTP unit bit because it doesn't use high voltage blocking elements such as high voltage blocking switch transistor and resistor. And the OTP array with the proposed OTP unit bit doesn't need sense amplifier and bias generation circuit that are used in a conventional OTP array because sense amplifier of inverter type is included to the proposed OTP unit bit.

Design Parameters and Experimental Performance Evaluation of 4-bit Digital Multi-heater Microinjector (4-bit 디지털 미소분사기의 설계변수와 토출성능간의 영향분석에 관한 실험적 연구)

  • Kang Tae Goo;Cho Young-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.3 s.234
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    • pp.418-424
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    • 2005
  • We present the design, fabrication and experimental results of 4-bit digital microinjectors, whose ejected droplet volumes are adjusted by the digital operation of a 4-bit microheater array. We design the reference microinjectors as well as its comparative test structures. In the fabrication process, we use a five-mask micromachining process and the total chip size of the fabricated microinjector is $7,640{\mu}m{\times}5,260{\mu}m.$ We measure the ejected droplet volumes and velocities, which are adjusted from $12.1{\pm}1.0~55.6{\pm}14.7pl\;and\;2.3{\pm}0.1~15.7{\pm}0.8m/s.$ respectively, depending on the 15 possible combinations of 4-bit microheater array. We also experimentally characterize the effect of geometric variation including the microheater size, inter-microheater gap, microchannel width and sequential operation of microheater array on the ejected droplet volume and velocity. Among these parameters, we find that the microheater size is the most dominant parameter affected to the ejected droplet volumes and velocities. Thus, the present microinjector has a potential for application to the high-resolution inkjet printers with multiple gray levels or high-precision fluid injectors with variable volume control.

Highly Integrated 3-dimensional NOR Flash Array with Vertical 4-bit SONOS (V4SONOS) (수직형 4-비트 SONOS를 이용한 고집적화된 3차원 NOR 플래시 메모리)

  • Kim, Yoon;Yun, Jang-Gn;Cho, Seong-Jae;Park, Byung-Gook
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.1-6
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    • 2010
  • We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having $1.5F^2$/bit cell size.

A Study on 1-D Bit-Serial Array Processor Design for Code-String Matching Using a MWLD Algorithm (MWLD 알고리즘을 이용한 문자열정합 1차원 Bit-Serial 어레이 프로세서의 설계)

  • 박종진;김은원;조원경
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.29B no.2
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    • pp.1-8
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    • 1992
  • This paper is proposed a Modified WLD (Weighted Levenshtein Distance) algorithm for processor desihn of code-string matching. A proposed MWLD (Modified Weighted Levenshtein Distance) algorithm is consist of 1-dimension bit-serial array processor to pattern matching using a Hamming Distance. The proposed processor is applied to recognition of character with real time input. The recognition rate of Hangul strokes is resulted to 98.65$\%$

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