• Journal of Welding and Joining
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• v.18 no.4
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• pp.96-103
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• 2000

This study investigated the effects of bonding temperature and bonding atmosphere on high temperature mechanical properties of transient liquid phase(TLP) bonded joints of heat resistant alloy using MBF-50 insert metal. Specimens were bonded at 1,423~1,468K for 600s. Microconstituents of {TEX}$Cr_{7}(C,B)_{3}${/TEX}were formed in the bonded region when the bonding temperature was low. The amount of microcostituents in the bonded layer decreased with increasing the bonding temperature, and the microconstituents in the bonded layer disappeared at the bonding temperature above 1,468K. The tensile strength of the joints at elevated temperatures increased with the increase the bonding temperature and was the same level as one of the base metal in the bonding temperature over 1,453K. Microstructure and alloying element distributions of the bonded region bonded in Ar and $N_2$atmosphere were similar to those of the bonded in vacuum. The creep rupture strength and rupture lives of joints were almost identical to those of base metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.29-33
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• 2010

As the demands for the higher data transmission speed and capacity as well as integration density grow throughout the network, much works have being done in order to integrate the Electrical PCB with Optical PCB. However, one of the most troublesome problems in the commercial bonding process is to need the high temperature for the bonding. Due to the high temperature bonding process, lots of side problems are followed such as warpage and crack, etc. In this paper, we tried to develop the new bonding technology with low temperature around $100^{\circ}C$. As a result of this study, the PCB bonding technology with high bonding strength is demonstrated with the value of bonding strength from 7 to 8 MPa at the temperature of $100^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.17-24
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• 2012

Recently, flip chip interconnection has been increasingly used in microelectronic assemblies. The common Flip chip interconnection is formed by reflow of the solder bumps. Lead-Tin solders and Tin-based solders are most widely used for the solder bump materials. However, the flip chip interconnection using these solder materials cannot be applied to temperature-sensitive components since solder reflow is performed at relatively high temperature. Therefore the development of low temperature bonding technologies is required in these applications. A few bonding techniques at low temperature of $150^{\circ}C$ or below have been reported. They include the reflow soldering using low melting point solder bumps, the transient liquid phase bonding by inter-diffusion between two solders, and the bonding using low temperature curable adhesive. This paper reviews various low temperature bonding methods.

• Journal of Korea Foundry Society
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• v.8 no.4
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• pp.429-436
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• 1988

The influences of some casting conditions on bonding ratio and state at bonding zone of stainless steel-cast iron dual tube produced by centrifugal casting process were investigated to estimate fabrication technics. 1) Bonding ratio is increasing such as increasing of inner surface temperature of outer metal(stainless steel STS 304), if pouring temperature of inner metal (cast iron) is constant. 2) The more pouring temperature of inner metal (cast iron) increase, the more bonding ratio increase when inner surface temperature of outer metal (cast iron) is constant. 3) As the mold rotary speed is increase, the hatching area of bonding map (perfect bonding area) goes down to the low pouring temperature of inner metal. 4) In order to predict bonding state of two different metal, we are able to make and use the bonding map about casting conditions such as inner surface temperature of outer metal, pouring temperature of inner metal and mold rotary speed.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.41-47
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• 2022

Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

• Journal of Welding and Joining
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• v.23 no.2
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• pp.52-58
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• 2005

This study was carried out to investigate the effect of bonding temperature and heating rate on transient liquid phase diffusion bonding of Ni-base superalloy. The heating rate was varied by $0.1^{\circ}C$/sec, $1^{\circ}C$/sec, $10^{\circ}C$/sec to the bonding temperatures $1100^{\circ}C,\;1150^{\circ}C,\;1200^{\circ}C$ under vacuum. As bonding temperature increased, maximum dissolution width of base metal increased, but a dissolution finishing time decreased. The eutectic width of insert metal in the bonded interlayer decreased linearly in proportion to the square root of holding time during isothermal solidification stage. The bonding temperature was raised, isothermal solidification rate slightly increased. As the heating rate decreased and the bonding temperature increased, the completion time of dissolution after reaching bonding temperature decreased. When the heating rate was very slow, the solidification proceeded before reaching bonding temperature and the time required for the completion of isothermal solidification became reduced.

• Journal of the Korean institute of surface engineering
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• v.56 no.3
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• pp.180-184
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• 2023

Scholars have proposed wafer-level bonding and three-dimensional (3D) stacked integrated circuit (IC) and have investigated Cu-Cu bonding to overcome the limitation of Moore's law. However, information about quantitative Cu-Cu direct-bonding conditions, such as temperature, pressure, and interfacial adhesion energy, is scant. This study determines the optimal temperature and pressure for Cu-Cu bonding by varying the bonding temperature to 100, 150, 200, 250, and 350 ℃ and pressure to 2,303 and 3,087 N/cm². Various conditions and methods for surface treatment were performed to prevent oxidation of the surface of the sample and remove organic compounds in Cu direct bonding as variables of temperature and pressure. EDX experiments were conducted to confirm chemical information on the bonding characteristics between the substrate and Cu to confirm the bonding mechanism between the substrate and Cu. In addition, after the combination with the change of temperature and pressure variables, UTM measurement was performed to investigate the bond force between the substrate and Cu, and it was confirmed that the bond force increased proportionally as the temperature and pressure increased.

• Journal of Welding and Joining
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• v.10 no.3
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• pp.63-72
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• 1992

The joining methods of ceramics to metals which can be expected to obtain high temperature strength are mainly classified into the solid-state diffusion bonding method and the active brazing method. Between these two, the solid-state diffusion bonding method is given attentions as substituting method for active brazing method due to being capable of obtaining higher bonding strength at high temperature and accurate bonding. In this paper, the solid-state diffusion bonding of $Al_{2}$O$_{3}$ ceramics to Ni-Cr-Mo alloy steel (SNCM21) using insert metal was carried out. The insert metal employed in this study was experimentally home-made, Ag-Cu-Ti alloy. Influence of several bonding parameters of $Al_{2}$O$_{3}$SNCM21 joint was quantitatively evaluated by bonding strength test, and microstructural analyses at the interlayer were performed by SEM/EDX. From above experiments, the optimum bonding condition of the solid-state diffusion bonding of $Al_{2}$O$_{3}$/SNCM21 using Ag-Cu-Ti insert metal was determined. Futhermore, high temperature strength and thermal-shock properties of $Al_{2}$O$_{3}$/SNCM21 joint were also examined. The results obtained are as follows. 1. The maximum bonding strength was obtained at the temperature of 95% melting point of insert metal. 2. The high temperature strength of $Al_{2}$O$_{3}$/SNCM21 joint appeared to bemaximum value at test temperature 500.deg.C and the bonding strength with increasingtemperature showed parabolic curve. 3. The strength of thermal-shocked specimens was far deteriorated than those of as-bonded specimens. Especially, water-quenched specimen after heated up to 600.deg. C was directly fractured in quenching.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.253-257
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• 2003

The low temperature flip chip technique is applied to the package of the temperature-sensitive devices for LCD systems and image sensors since the high temperature process degrades the polymer materials in their devices. We will introduce the various low temperature flip chip bonding techniques; a conventional flip chip technique using eutectic Bi-Sn (mp: $138^{\circ}C$) or eutectic In-Ag (mp: $141^{\circ}C$) solders, a direct bump-to-bump bonding technique using solder bumps, and a low temperature bonding technique using low temperature solder pads.

• Journal of Welding and Joining
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• v.21 no.2
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• pp.82-88
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• 2003

The bonding phenomenon and mechanism in the transient liquid phase bonding(TLP Bonding) of directionally solidified Ni base superalloy, GTD-111 was investigated. At the bonding temperature of 1403K, liquid insert metal was eliminated by isothermal solidification which was controlled by the diffusion of B and Si into the base metal and solids in the bonded interlayer grew epitaxially from mating base metal inward the insert metal. The number of grain boundaries formed at the bonded interlayer was corresponded with those of base metal. The liquation of grain boundary and dendrite boundary occurred at 1433K. At the bonding temperature of 1453K which is higher than liquation temperature of grain boundary, liquids of the Insert metal were connected with liquated grain boundaries and compositions in each region mixed mutually. In Joints held for various time at 1453t phases formed at liquated grain boundary far from the interface were similar to those of bonded interlayer. With prolonged holding time, liquid phases decreased gradually and liquids of continuous band shape divided many island shape. But liquid phases did not disappeared after holding for 7.2ks at 1453k. Isothermal solidification process at the bonding temperature which is higher than the liquation temperature of the grain boundary was controlled by diffusion of Ti to be result in liquation than B or Si. in insert metal. (Received January 15, 2003)