• Title/Summary/Keyword: Boron carbide film

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Friction and Wear Properties of Boron Carbide Coating under Various Relative Humidity

  • Pham Duc-Cuong;Ahn Hyo-Sok;Yoon Eui-Sung
    • KSTLE International Journal
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    • v.6 no.2
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    • pp.39-44
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    • 2005
  • Friction and wear properties of the Boron carbide ($B_{4}C$) coating 100 nm thickness were studied under various relative humidity (RH). The boron carbide film was deposited on silicon substrate by DC magnetron sputtering method using $B_{4}C$ target with a mixture of Ar and methane ($CH_4$) as precursor gas. Friction tests were performed using a reciprocation type friction tester at ambient environment. Steel balls of 3 mm in diameter were used as counter-specimen. The results indicated that relative humidity strongly affected the tribological properties of boron carbide coating. Friction coefficient decreased from 0.42 to 0.09 as the relative humidity increased from $5\%$ to $85\%$. Confocal microscopy was used to observe worn surfaces of the coating and wear scars on steel balls after the tests. It showed that both the coating surface and the ball were significantly worn-out even though boron carbide is much harder than the steel. Moreover, at low humidity ($5\%$) the boron carbide showed poor wear resistance which resulted in the complete removal of coating layer, whereas at the medium and high humidity conditions, it was not. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analyses were performed to characterize the chemical composition of the worn surfaces. We suggest that tribochemical reactions occurred during sliding in moisture air to form boric acid on the worn surface of the coating. The boric acid and the tribochemcal layer that formed on steel ball resulted in low friction and wear of boron carbide coating.

Structural and component characterization of the B4C neutron conversion layer deposited by magnetron sputtering

  • Jingtao Zhu;Yang Liu;Jianrong Zhou;Zehua Yang;Hangyu Zhu;Xiaojuan Zhou;Jinhao Tan;Mingqi Cui;Zhijia Sun
    • Nuclear Engineering and Technology
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    • v.55 no.9
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    • pp.3121-3125
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    • 2023
  • Neutron conversion detectors that use 10B-enriched boron carbide are feasible alternatives to 3He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B4C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the 10B-enriched B4C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD) (MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착)

  • Yoon, Su-Jong;Kim, Tae-Gyu
    • Journal of the Korean institute of surface engineering
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    • v.41 no.2
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    • pp.43-47
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    • 2008
  • Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

A Study on the Sintering of Diamond Composite at Low Temperature Under Low Pressure and its Subsequent Conductive PVD Process for a Cutting Tool (절삭 공구용 다이아몬드 복합체의 저온 저압 소결 합성 및 후속 도전형 박막 공정 특성 연구)

  • Cho, Min-Young;Ban, Kap-Soo
    • Journal of the Korean Society of Industry Convergence
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    • v.23 no.1
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    • pp.25-32
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    • 2020
  • Generally, high-temperature, high-pressure, high-priced sintering equipment is used for diamond sintering, and conductivity is a problem for improving the surface modification of the sintered body. In this study, to improve the efficiency of diamond sintering, we identified a new process and material that can be sintered at low temperature, and attempted to develop a composite thin film that can be discharged by doping boron gas to improve the surface modification of the sintered body. Sintered bodies were sintered by mixing Si and two diamonds in different particle sizes based on CIP molding and HIP molding. In CVD deposition, CVD was performed using WC-Co cemented carbide using CH4 and H2 gas, and the specimen was made conductive using boron gas. According to the experimental results of the sintered body, as the Si content is increased, the Vickers hardness decreases drastically, and the values of tensile strength, Young's modulus and fracture toughness greatly increase. Conductive CVD deposited diamond was boron deposited and discharged. As the amount of boron added increased, the strength of diamond peaks decreased and crystallinity improved. In addition, considering the release processability, tool life and adhesion of the deposition surface according to the amount of boron added, the appropriate amount of boron can be confirmed. Therefore, by solving the method of low temperature sintering and conductivity problem, the possibility of solving the existing sintering and deposition problem is presented.

Effect of boron doping on the chemical and physical properties of hydrogenated amorphous silicon carbide thin films prepared by PECVD (플라즈마 화학증착법으로 제조된 수소화된 비정질 탄화실리콘 박막의 물성에 대한 붕소의 도핑효과)

  • 김현철;이재신
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.104-111
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    • 2001
  • B-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared by plasma-enhanced chemical-vapor deposition in a gas mixture of $SiH_4, CH_4,\;and\; B_2H_6$. Physical and chemical properties of a-SiC:H films grown with varing the ratio of $B_2H_6/(SiH_4+CH_4)$ were characterized with various analysis methods including scanning electron microscopy (SEM), X-ray diffractometry (XRD), Raman spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, secondary ion mass spectroscopy (SIMS), UV absorption CH_4spectroscopy and electrical conductivity measurements. With the B-doping concentration, the doping efficiency and the micro-crystallinity were decreased and the film became amorphous when $B_2H_6/(SiH_4{plus}CH_4)$ was over $5{\times}10^{-3}$. The addition of $B_2H_6$ gas during deposition decreased the H content in the film by lowering the quantity of Si-C-H bonds. Consequently, the optical band gap and the activation energy of a-SiC:H films were decreased with increasing the B-doping level.

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Electrochemical treatment of wastewater using boron doped diamond electrode by metal inter layer

  • KIM, Seohan;YOU, Miyoung;SONG, Pungkeun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.251-251
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    • 2016
  • For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

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Comparative Analysis of Heat Sink and Adhesion Properties of Thermal Conductive Particles for Sheet Adhesive (열전도성 입자를 활용한 시트용 점착제의 점착 특성과 방열특성 연구)

  • Kim, Yeong Su;Park, Sang Ha;Choi, Jeong Woo;Kong, Lee Seong;Yun, Gwan Han;Min, Byung Gil;Lee, Seung Han
    • Textile Coloration and Finishing
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    • v.28 no.1
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    • pp.48-56
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    • 2016
  • Improvement of heat sink technology related to the continuous implementation performance and extension of device-life in circumstance of easy heating and more compact space has been becoming more important issue as multi-functional integration and miniaturization trend of electronic gadgets and products has been generalized. In this study, it purposed to minimize of decline of the heat diffusivity by gluing polymer through compounding of inorganic particles which have thermal conductive properties. We used NH-9300 as base resin and used inorganic fillers such as silicon carbide(SiC), aluminum nitride(AlN), and boron nitride(BN) to improve heat diffusivity. After making film which was made from 100 part of acrylic resin mixed hardener(1.0 part more or less) with inorganic particles. The film was matured at $80^{\circ}C$ for 24h. Diffusivity were tested according to sorts of particles and density of particles as well as size and structure of particle to improve the effect of heat sink in view of morphology assessing diffusivity by LFA(Netzsch/LFA 447 Nano Flash) and adhesion strength by UTM(Universal Testing Machine). The correlation between diffusivity of pure inorganic particles and composite as well as the relation between density and morphology of inorganic particles has been studied. The study related morphology showed that globular type had superior diffusivity at low density of 25% but on the contarary globular type was inferior to non-globular type at high density of 80%.