• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.787-791
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• 2015

In this paper, the growing orientation of PMN-PT single crystal is analyzed using the Laue-Back Reflection Method. Two kinds of PMN-PT single crystals are grown using the Bridgman growing method in the [001] and [111] directions and their the Laue photographs are simulated assuming cubic crystal systems. From the comparison between simulation and test results, it can be concluded that the single crystals are grown in the desired crystal orientations.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.81-87
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• 1996

The mechanism of silicon incorporation has been analyzed for the boat-grown GaAs crystals on the basis of phase equilibrium in the Ga and As system. Comparison was made between silicon concentrations calculated from the thermodynamics of incorporation reaction and carrier concentrations measured from van der Pauw method. For the 1-T HB(single temperature zone horizontal Bridgman) crystals, calculated concentrations were 5.3 ×10 15 (atoms/cm3), measured as 9.8 ×10 15(/cm3) at the seed part. They were calculated to be 1.1 ×10 16(atoms/cm3) and measured as 1.5 ×10 16(/cm3) for the 2-T(double temperature zone) HB crystals. On the other hand, it was found to be closer between the calculated and measured silicon concentrations for the VGF(vertical gradient freeze) crystals, which were grown within half the run time compared with 1-T or 2-T HB method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.231-238
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• 2015

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. Among the many crystal growth methods, vertical Bridgman process is an excellent commercial method for growing high quality sapphire crystals with c-axis. In this study, the thermally induced stress in Sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model. A vertical Bridgman process of 2-inch Sapphire was considered for the model. The effects of vertical and transverse temperature gradients on the thermal stress during the process were discussed based on the finite element analysis results.

• Journal of the Korean Ceramic Society
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• v.29 no.7
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• pp.539-543
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• 1992

The continuous growth method was developed for Mn-Zn Ferrite single crystals. It is a new process that the polycrystalline MnχZn1-χFe2O4 raw materials are supplied continuously from the powder feeding system to the crucible heated by R.F. induction and melted in the crucible, and after the single crystals seed is attached to crucible's hole, the crystals are pulled downward with rotation. Growing the crystals by using the growth method different from the conventional Bridgman or Floating Zone method, we defined the factors having effect on the crystal growing through the pre-experiments. They are temperature distribution in the crucible, melt velocity according to its height, wettability between the crucible's bottom and melt. Therefore, Mn-Zn Ferrite single crystals were to be grown by attaining the appropriate melt height in the crucible, powder feeding rate, temperature gradient between the crucible and interface, crystal growing speed, and this method was confirmed to have possibility for single crystal growing.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.9-13
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• 1998

Large vacuum Bridgman-Stockbarger (BS) equipments was composed for growing large diameter CaF2 crystals. The CaF2 crystal of 4.5-inch was grown under the conditions of freezing temperature gradient of 12$^{\circ}C$/cm and growing rate of 3mm/hr. Also the 6-inch crystal was grown by using thermal stabilization method under freezing temperature gradient of 14$^{\circ}C$/cm and growing rate of 2mm/hr. The dislocation density was characterized for evaluating the quality of crystals. And the optical properties such as transmittance, refractive index and fluorescence were analyzed in order to investigate on the applications of optical components.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.23-33
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• 1991

Mn - Zn Ferrite has the natural characteristics of incongruent melting and the zinc oxide evaporation while the crystal is being grown. As a result of these, it comes into existence to be a non-uniform distribution of cations along the crystal growth axis and also Pt particles are usually precipitated into the crystals in Bridgman method since the melt zone is maintained for a long time in the crucible. These have bad effects on the magnetic properties of ferrites. But, to overcome these faults and then acquire the better single crystals. new modified growth method was developed and the growth factors were investigated as following: melt height in the crucible, surface tension and density of melt, the behavior of melt at interface, the shapes of crucible and solid -liquid interface, powder feeding rate, and the crystal growing speed. In additon, when we analyzed the compositional fluctuations of grown crystals, they were supressed within 1.5 mol% $Fe_20_3$, 2 mol% MnO, ZnO respectively with comparing to initial composition of crystal and the microstructures of crystals on the(110) plane were observed by optical microscope through the chemical etching technique and the magnetic properties were determined.

• Journal of Korea Foundry Society
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• v.12 no.3
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• pp.203-209
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• 1992

Directional solidification of Al-Ti peritetic alloys was carried out using Upward Continuous Casting Process. The morphology of a solid-liquid interface and solidification microstructures were investigated under various crystal growing conditions. The experimental results were compared with those attained by the Bridgman method. The cell spacing of the Al-Ti peritetic alloys and the primary dendrite arm spacing of the Al-Ti peritetic alloys decreased with an increase in pulling speed. The primary ${\beta}$ phase of the Al-Cr and Al-Ti peritectic alloys did not appear in solidification microstructures because of the depleted solute contents in the melt ahead of the solid-liquid interface.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.187-190
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• 1987

This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.