• Title/Summary/Keyword: Buffer Intensity

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Buffer Intensity of Ammonia and MPA in Water-Steam Cycle of PWRs (가압경수로 원전 물-증기 순환영역에서 암모니아와 MPA의 완충세기)

  • Rhee, In-H.;Ahn, Hyun-Kyoung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.7
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    • pp.2708-2712
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    • 2010
  • Amines, ammonia or 3-methoxypropylamine (MPA), are used to maintain the optimized pH for the prevention of corrosion in the secondary side of Pressurized Water Reactors (PWRs). They are differently dissociated as a function of temperature which is not same in each location of the water-steam cycle. pH at the operation temperature depends on temperature of fluid and equilibrium constants of water and amines. Thus, every amine provides the different pH in the entire secondary side so that pH is not only the sufficient parameter in corrosion control. The secondary parameter, i.e., buffer intensity, is the ability to maintain a stable pH when $H^+$ are added or removed due to the ingress of impurities or the reaction of corrosion. The buffer intensity is necessary to provide the selection criteria for the best pH control agent for secondary side and the basic understanding of the reason why the flow-accelerated corrosion(FAC) rate may demonstrate the bell-shape curve over temperature. The buffer intensities of ammonia and MPA were reviewed over the entire operation temperature of PWRs. The sufficient buffer intensity is provided for the inhibition of corrosion by ammonia in low temperature $(25{\sim}100^{\circ}C)$ and by DMA in high temperature $(150{\sim}250^{\circ}C)$. In terms of buffer intensity, i) the best pH control agent is an amine with $pK_a(T)$ range of pH(T)- $1{\leq}pK_a(T){\leq}pH(T)$ + 0.5 and ii) the amine solution should have sufficient buffer intensity, ${\beta}$ to inhibit corrosion, and iii) FAC rate may be maximum at the temperature, where ${\beta}_B/{\beta}$ ratio is lowest.

A Study on the Multiplexing of ISDN D-channel using Statistical Multiplexer (총계적 다중 방식을 이용한 ISDN D채널 다중화에 관한 연구)

  • 구제길;김영철;이호준;조규섭;박병철;김병찬
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.11 no.4
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    • pp.268-279
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    • 1986
  • Recently, the improtance of the ISDN has been emphasized for the new services in the future information society. In this paper, new application of statistical multiplexer which can be used for CCITT D-channel multiplexing is suggested. The basic architecture of statistical multiplexer which can interleave eleven 16Kbps D-channels into one 64Kbps B-channel is also proposed. The necessary buffer size was estimated by computer simulation considering data traffic intensity, signal arrival length distribution and buffer overflow probability. Based on this buffer size, the basic architecture of the statistical multiplexer has been survetyed and hardware design principles are also studied.

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Influence of Growth Temperature for Active Layer and Buffer Layer Thickness on ZnO Nanocrystalline Thin Films Synthesized Via PA-MBE

  • Park, Hyunggil;Kim, Younggyu;Ji, Iksoo;Kim, Soaram;Lee, Sang-Heon;Kim, Jong Su;Leem, Jae-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.203.1-203.1
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    • 2013
  • Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

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콘크리트 재생 골재를 이용한 산성광산배수 중화처리

  • 김종범;오재일;정시열
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2001.09a
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    • pp.71-74
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    • 2001
  • AMB(Acid Mine Drainage), characterized as high concentration of metal & sulfate ions and low pH(2.0~4.0), is the world-wide problem wherever there is or has been mining activities. Though limestone has been generally used to neutralize AMD, There are metal hydroxide precipitation on the surface of limestone and excessive alkalinity formation which exceeds the regulation. In this research, concrete-recycled fine aggregate is selected for alternative neutralizing agent. Because fine recycled aggregate had more ANP than others in the preliminary research, the purpose of this research is to apply fine aggregate for AMD neutralization. Three columns packed with fine aggregates(2.5mm$O_3$) of it is calculated as 0.09(C-1), approximated 10% purity of limestone. Comparing with values of other columns(C-2: 0.01 and C-3: 0.01), there is variation of porosity and residence time induced from the precipitation of metal hydroxide. Consequently, 8 hours of HRT is enough to create adequate alkalinity and the function which could expect the variation of porosity(n) and residence time( $t_{R}$) should be applied to develop design function.lied to develop design function.

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Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate (패턴화된 사파이어 기판 위에 증착된 AlN 버퍼층 박막의 에피층 구조의 광학적 특성에 대한 영향)

  • Park, Kyoung-Wook;Yun, Young-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.1
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    • pp.1-6
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    • 2020
  • In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

Temperature and the Interfacial Buffer Layer Effects on the Nanostructure in the Copper (II) Phthalocyanine: Fullerene Bulk Heterojunction

  • Kim, Hyo Jung;Kim, Jang-Joo;Jeon, Taeyeol;Kong, Ki Won;Lee, Hyun Hwi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.275.1-275.1
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    • 2014
  • The effects of the interfacial buffer layer and temperature on the organic bulk heterojunction (BHJ) nanostructures of copper phthalocyanine (CuPc) and fullerene (C60) systems were investigated using real time in-situ x-ray scattering. In the CuPc:C60 BHJ structures, standing-on configured ${\gamma}$-CuPc phase was formed by co-deposition of CuPc and C60. Once formed ${\gamma}$-phase was thermally stable during the annealing upon $180^{\circ}C$. Meanwhile, the insertion of CuI buffer layer prior to deposition of the CuPc:C60 BHJ layer induced lying-down configured CuPc crystals in the BHJ layer. The lying CuPc peak intensity and the lattice parameter were increased by the thermal annealing. This increment of the intensity seemed to be related to the strain at the interface between CuPc:C60 and CuI, which was proportional to the enhancement of the power conversion efficiency of the device.

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On Statistical Multiplexing of Data Signals with Dynamic Buffer Control (Buffer의 동적제어에 의한 데이터 신호의 통계적 다중화에 관한 연구)

  • 김낙명;은종관
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.20 no.3
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    • pp.61-68
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    • 1983
  • In this paper various aspects of statistical maltiplexing of data signs have been investigated. A queueing model with finite waiting room and batch poisson arrivals is studied assuming that data signals are transmitted at a constant rate. Using traffic intensity and average burst length as parameters, overflow probabilities and expected queueing delay due to buffering are obtained. Also, a real system model of a statistical multiplexer that can be directly used in micro-programmed hardware realization is proposed. To examine the performance of the system, computer simulation has been done at various conditions. The results obtained can be used in designing a buffer efficiently.

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The Interaction of HIV-1 Inhibitor 3,3',3",3‴-Ethylenetetrakis-4-Hydroxycoumarin with Bovine Serum Albumin at Different pH

  • Dong, Sheying;Yu, Zhuqing;Li, Zhiqin;Huang, Tinglin
    • Bulletin of the Korean Chemical Society
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    • v.32 no.6
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    • pp.2063-2069
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    • 2011
  • We studied the interaction of 3,3',3'',3'''-ethylenetetrakis-4-hydroxycoumarin (EHC) with bovine serum albumin (BSA) in acetate buffer and phosphate buffer with different pH values by UV-vis absorption spectrometry and fluorescence spectrometry respectively. It was found that the pH values of the buffer solutions had an effect on the interaction process. In acetate buffer of pH 4.70, the carbonyl groups in EHC bound to the amino groups in BSA by means of hydrogen bond and van der Waals force, which made the extent of peptide chain in BSA changed. By contrast, in phosphate buffer of pH 7.40, hydrophobic force played a major role in the interaction between EHC and BSA, while the hydrogen bond and van der Waals force were also involved in the interaction. The results of spectrometry indicated that BSA could enhance the fluorescence intensity of EHC by forming a 1:1 EHC-BSA fluorescent complex through static mechanism at pH 4.70 and 7.40 respectively. Furthermore, EHC bound on site 1 in BSA.

Effects of Ionic Strength in the Medium on Sample Preconcentration Utilizing Nano-interstices between Self-Assembled Monolayers of Gold Nanoparticles

  • Nguyen, Ngoc-Viet;Wu, Jian-Sheng;Jen, Chun-Ping
    • BioChip Journal
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    • v.12 no.4
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    • pp.317-325
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    • 2018
  • This paper investigated the effects of ionic strength in the medium on a preconcentrator for a protein sample with low concentration. The preconcentration chip was designed and fabricated using a polydimethylsiloxane replica through standard lithophotography. A glass substrate is silanized prior to functionalizing the nanoparticles for self-assembly at a designed region. Due to the overlap of electrical double layers in a nanofluidic channel, a concentration polarization effect can be achieved using an electric field. A nonlinear electrokinetic flow is induced, resulting in the fast accumulation of proteins in front of the induced ionic depletion zone, so called exclusion-enrichment effect. Thus, the protein sample can be driven by electroosmotic flow and accumulated at a specific location. The chip is used to collect fluorescein isothiocyanate-labeled bovine serum albumin (FITC-BSA) diluted in phosphate-buffered saline (PBS) buffer solution. Different concentrations of the buffer media were studied herein. Fluorescence intensity images show that the buffer concentration of 4 mM is more appropriate than all the other ones. The sample of FITC-BSA with an initial concentration of $10{\mu}M$ in the 4 mM PBS solution increases its concentration at the desired region by up to 50 times within 30 min, demonstrating the results in this investigation.

High Quality Non-Transfer Single-Layer Graphene Process Grown Directly on Ti(10 nm)-Buffered Layer for Photo Lithography Process (포토 리소그래피 공정을 위한 Ti(10 nm)-Buffered층 위에 직접 성장된 고품질 무전사 단층 그래핀 공정)

  • Oh, Keo-Ryong;Han, Yire;Eom, Ji-Ho;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.1
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    • pp.21-26
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    • 2021
  • Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.