• 한국산학기술학회논문지
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• 제11권7호
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• pp.2708-2712
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• 2010

아민(암모니아 또는 MPA)은 가압경수로 원전 2차측 부식을 방지하는 최적 pH를 유지하기 위해 사용되고, 온도가 동일하게 유지되지 않는 물-증기 순환 영역에서 모든 아민은 평형상수에 따라 2차측에서 서로 다른 pH를 나타낸다. 부식제어에서 pH는 유일한 인자가 아니므로 두 번째 변수, 즉 불순물의 유입 또는 부식 반응으로 인해 $H^+$가 추가되거나 제거되었을 때 안정된 pH를 지속하는 능력인 완충세기의 고려가 필요하다. 온도를 고려한 완충세기는 2차측 최적 pH 제어제 선정과 유체가속부식의 특징을 기본적으로 이해할 수 있도록 한다. PWRs의 전체 운전범위에서 암모니아와 MPA의 완충세기를 조사하였다. 낮은 온도$(25{\sim}100^{\circ}C)$에서는 암모니아 그리고 높은 온도$(150{\sim}250^{\circ}C)$에서는 MPA가 부식 억제를 위한 충분한 완충세기를 나타내었다. 완충세기 측면에서, i) 최적 pH 제어제 pH 범위는 pH(T)- $1{\leq}pK_a(T){\leq}pH(T)$+0.5, ii) 아민 용액은 부식 억제를 위해 충분한 완충세기$({\beta})$를 가져야하고, iii) 최대 유체가속부식은 ${\beta}_B/{\beta}$ 비율이 최저인 온도에서 최대를 나타낸다.

• 한국통신학회논문지
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• 제11권4호
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• pp.268-279
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• 1986

最近, 미래의 情報化 社會에서 요구되는 새로운 서어비스 제공을 위한 綜合情報 通信網(integrated services digital network: ISDN)의 重要性이 강조되고 있다. 本 論文에서는 ISDN 加入者 返送裝置를 開發함에 있어, 加入者수용 能力을 제고시키기 위하여 11個의 D채널 多重化 裝置의 基本構造를 提示하였으며 이와함께 data traffic intensity, 信號의 到着 및 길이 分布, buffer overflow probability 등을 硏究하여 效率的으로 데이터를 多重化하기 위한 buffer memory size를 統計的으로 산출하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.203.1-203.1
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• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2001년도 추계학술발표회
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• pp.71-74
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• 2001

AMB(Acid Mine Drainage), characterized as high concentration of metal & sulfate ions and low pH(2.0~4.0), is the world-wide problem wherever there is or has been mining activities. Though limestone has been generally used to neutralize AMD, There are metal hydroxide precipitation on the surface of limestone and excessive alkalinity formation which exceeds the regulation. In this research, concrete-recycled fine aggregate is selected for alternative neutralizing agent. Because fine recycled aggregate had more ANP than others in the preliminary research, the purpose of this research is to apply fine aggregate for AMD neutralization. Three columns packed with fine aggregates(2.5mm$O_3$) of it is calculated as 0.09(C-1), approximated 10% purity of limestone. Comparing with values of other columns(C-2: 0.01 and C-3: 0.01), there is variation of porosity and residence time induced from the precipitation of metal hydroxide. Consequently, 8 hours of HRT is enough to create adequate alkalinity and the function which could expect the variation of porosity(n) and residence time( $t_{R}$) should be applied to develop design function.lied to develop design function.

• 한국결정성장학회지
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• 제30권1호
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• pp.1-6
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• 2020

본 연구에서는 패턴화된 사파이어 기판 위에 HVPE(Hydride Vapor Phase Epitaxy System) 법에 의해 50 nm 두께의 AlN thin film을 증착한 뒤, 에피층 구조가 MO CVD에서 성장되었다. AlN 버퍼층 박막의 표면형상이 SEM, AFM에 의해서, 에피층 구조의 GaN 박막의 결정성은 X-선 rocking curve에 의해 분석되었다. 패턴화된 사파이어 기판 위에 증착된 GaN 박막은, 사파이어 기판 위에 증착된 GaN 박막의 경우보다 XRD 피크 세기가 다소 높은 결과를 나타냈다. AFM 표면 형상에서 사파이어 기판 위에 AlN 박막이 증착된 경우, GaN 에피층 박막의 p-side 쪽의 v-pit 밀도가 상대적으로 낮았으며, 결함밀도가 낮게 관찰되었다. 또한, AlN 버퍼층이 증착된 에피층 구조는 AlN 박막이 없는 에피층의 광출력에 비해 높은 값을 나타냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.275.1-275.1
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• 2014

The effects of the interfacial buffer layer and temperature on the organic bulk heterojunction (BHJ) nanostructures of copper phthalocyanine (CuPc) and fullerene (C60) systems were investigated using real time in-situ x-ray scattering. In the CuPc:C60 BHJ structures, standing-on configured ${\gamma}$-CuPc phase was formed by co-deposition of CuPc and C60. Once formed ${\gamma}$-phase was thermally stable during the annealing upon $180^{\circ}C$. Meanwhile, the insertion of CuI buffer layer prior to deposition of the CuPc:C60 BHJ layer induced lying-down configured CuPc crystals in the BHJ layer. The lying CuPc peak intensity and the lattice parameter were increased by the thermal annealing. This increment of the intensity seemed to be related to the strain at the interface between CuPc:C60 and CuI, which was proportional to the enhancement of the power conversion efficiency of the device.

• 대한전자공학회논문지
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• 제20권3호
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• pp.61-68
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• 1983

본 논문에서는 데이터 신호의 통계적 다중화에 관한 제문제들이 취급되었다. 먼저 한정된 waiting room을 가진 시스템에서 데이타 신호가 일정한 속도로 출력된다고 가정하고 batch-poisson 분포의 신호가 입력될 때의 queueing model을 검토하였다. 즉. 신호량과 신호의 평균길이를 변수로 하여 buffer의 크기, overflow의 확률 및 buffering으로 야기되는 queueing 지연시간 등을 살펴보았다. 그리고 데이터 신호의 통계적 다중화 시스템에 관한 실제 모델을 제시하여 마이크로프로그래밍을 통한 하드웨어 구현에 기본이 되게 하였다. 제안된 실제 모델은 buffer의 동적제어방식을 응용하여 설계되었으며 효율적인 I/O프로세스가 되도록 마련하였다. 끝으로. 이 시스템 모델의 성능을 알아보기 위하여 여러 조건에서의 컴퓨터 시뮬레이션을 행하였다. 이 연구로 얻어진 제반 결과는 일반적인 buffer설계에 지침이 될 수 있다.

• Bulletin of the Korean Chemical Society
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• 제32권6호
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• pp.2063-2069
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• 2011

We studied the interaction of 3,3',3'',3'''-ethylenetetrakis-4-hydroxycoumarin (EHC) with bovine serum albumin (BSA) in acetate buffer and phosphate buffer with different pH values by UV-vis absorption spectrometry and fluorescence spectrometry respectively. It was found that the pH values of the buffer solutions had an effect on the interaction process. In acetate buffer of pH 4.70, the carbonyl groups in EHC bound to the amino groups in BSA by means of hydrogen bond and van der Waals force, which made the extent of peptide chain in BSA changed. By contrast, in phosphate buffer of pH 7.40, hydrophobic force played a major role in the interaction between EHC and BSA, while the hydrogen bond and van der Waals force were also involved in the interaction. The results of spectrometry indicated that BSA could enhance the fluorescence intensity of EHC by forming a 1:1 EHC-BSA fluorescent complex through static mechanism at pH 4.70 and 7.40 respectively. Furthermore, EHC bound on site 1 in BSA.

• BioChip Journal
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• 제12권4호
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• pp.317-325
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• 2018

This paper investigated the effects of ionic strength in the medium on a preconcentrator for a protein sample with low concentration. The preconcentration chip was designed and fabricated using a polydimethylsiloxane replica through standard lithophotography. A glass substrate is silanized prior to functionalizing the nanoparticles for self-assembly at a designed region. Due to the overlap of electrical double layers in a nanofluidic channel, a concentration polarization effect can be achieved using an electric field. A nonlinear electrokinetic flow is induced, resulting in the fast accumulation of proteins in front of the induced ionic depletion zone, so called exclusion-enrichment effect. Thus, the protein sample can be driven by electroosmotic flow and accumulated at a specific location. The chip is used to collect fluorescein isothiocyanate-labeled bovine serum albumin (FITC-BSA) diluted in phosphate-buffered saline (PBS) buffer solution. Different concentrations of the buffer media were studied herein. Fluorescence intensity images show that the buffer concentration of 4 mM is more appropriate than all the other ones. The sample of FITC-BSA with an initial concentration of $10{\mu}M$ in the 4 mM PBS solution increases its concentration at the desired region by up to 50 times within 30 min, demonstrating the results in this investigation.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.21-26
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• 2021

Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.