• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.2
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• pp.66-72
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• 2020

The difference of plasma resistance between the CAS glass bulk and coating films were compared. Plasma resistance was confirmed by analyzing the etch rate and the microstructure of the surface when the CAS glass bulk and the glass coating film were etched with CF₄/O₂/Ar plasma gas. CAS glass coating film was etched up to 25 times faster than the glass bulk. A statistically high correlation between the surface roughness and the etching rate of the coating film was derived, and thus, the high surface roughness of the coating film was determined to cause rapid etching. In addition, cristobalite crystals that has a low Ca content and a high Si content, was foamed on the glass coating film. Therefore, the CAS glass coating film is considered to have low plasma resistance compared to the glass bulk.

• Journal of Powder Materials
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• v.27 no.6
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• pp.498-502
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• 2020

We investigate the effects of Yb2O3 and calcium aluminosilicate (CAS) glass as sintering additives on the sintering behavior of AlN. The AlN specimens are sintered at temperatures between 1700℃ and 1900℃ for 2 h in a nitrogen atmosphere. When the Yb2O3 content is low (within 3 wt.%), an isolated shape of secondary phase is observed at the AlN grain boundary. In contrast, when 3 wt.% Yb2O3 and 1 wt.% CAS glass are added, a continuous secondary phase is formed at the AlN grain boundary. The thermal conductivity decreases when the CAS glass is added, but the sintering density does not decrease. In particular, when 10 wt.% Yb2O3 and 1 wt.% CAS glass are added to AlN, the flexural strength is the highest, at 463 MPa. These results are considered to be influenced by changes in the microstructure of the secondary phase of AlN.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• Journal of the Korean Ceramic Society
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• v.34 no.7
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• pp.693-698
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• 1997

The refractive index and dispersion in the (100-x)(0.6CaO.0.4Al2O3).xSiO2(x=0~30) glasses were investigated. As the amount of SiO2 increased, the refractive index decreased. The change of refractive index was attributed to the change of the molar refraction rather than the molar volume. When the amount of SiO2 was smaller than 20 mol%, the average electronic transition energy gaps(E0) and the electronic oscillator strengths(Ed) were about 10.9($\pm$0.1) nd 18($\pm$0.5)eV, respectively. However E0 and Ed of the glass (CAS30) with 30 mol% SiO2 increased to 12.63 and 19.89eV, respectively. The similar results was observed in the variation of Abbe Number. Abbe number of the glass in the range of 0~20 mol% SiO2 was about 46 and that of CAS30 increased to 60. The zero-material dispersion wavelength({{{{ lambda }}0) of pure calcium aluminate glass was 1.8 ${\mu}{\textrm}{m}$. As the amount of SiO2 increased, the zero-material dispersion wavelength shifted to a shorter wavelength. {{{{ lambda }}0 of CAS30 was 1.5 ${\mu}{\textrm}{m}$, that is currently using for the optical telecommunication system.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.232-237
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• 2004

The tension behavior of Nicalon/CAS glass-ceramic matrix composites was investigated. Infrared (IR) thermography was employed for two different types of $Nicalon^{TM}/CAS$ composites, i.e., cross-ply and unidirectional specimens. During tensile testing, an IR camera was used for in-situ monitoring of progressive damages of $Nicalon^{TM}/CAS$ samples. The IR camera provided the temperature changes during tensile testing. Microstructural characterization using scanning electron microscopy (SEM) was performed to investigate the fracture mechanisms of $Nicalon^{TM}/CAS$ composites. In this investigation, the thermographic NDE technique was used to facilitate a better understanding of the fracture mechanisms of the $Nicalon^{TM}/CAS$ composites during tensile testing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.298-307
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• 2019

Two types of CaO-Al₂O₃-SiO₂ (CAS) glass powder applied spray coating on the surface of sintered Al₂O₃ were researched for sintering behavior; (1) Si-rich, glass containing high content SiO₂, (2) Ca-rich, containing high content CaO. Foaming of bubbles remaining inside the Ca-rich glass was produced at a viscosity of approximately 10⁷~10⁹ poise, resulting in decreasing shrinkage (interfering with sintering) and increasing surface roughness. In case of Si-rich glass, there was no serious foaming bubbles phenomenon like Ca-rich below 1000℃, however cristobalite crystals with low density occurred at 1200℃ and then produced re-foaming of bubbles, resulting in abnormal sintering behavior. These phenomenon is considered to be a decrease in viscosity due to an increase in the Ca content of the glass according to the formation of low-density cristobalite crystals. Therefore, in case of CAS glass, it is necessary to consider the increase of surface roughness and the sintering interference because of foaming bubbles phenomenon at low temperature sintering. Especially, when containing high SiO₂ content, abnormal foaming phenomenon due to crystallization at high temperature should be predicted.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.195-195
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• 2008

CAS계 유리에 $CaCO_3-Al_2O_3$ 혼합물 및 화합물을 10, 30 wt% 첨가하여 저온 소걸 및 마이크로파 유전 특성을 고찰하였다. CAS계 유리의 연화온도는 $841^{\circ}C$ 이며, CAS계 유리에 $CaCO_3$ 와 30 wt%의 $CaCO_3-Al_2O_3$ 혼합물을 melting되며, 10 wt%의 $CaCO_3$, $Al_2O_3$, $1CaCO_3-1Al_2O_3$ 혼합물 및 $CaAl_2O_4$ 화합물를 10 wt% 첨가하였을 때 $900^{\circ}C$ 이하에서 소걸이 가능하였다. 복합체의 XRD 상 분석 결과, CaCO3를 첨가하였을 때에는 모든 조성이 비정질을 나타내었고, $Al_2O_3$와 $1CaCO_3-1Al_2O_3$ 혼합물은 $Al_2O_3$ 결정상이 생성되었고, $CaAl_2O_4$ 화합물은 $CaAl_2Si_2O_8$의 hexagonal와 anorthite 결정상이 생성되었다. 따라서 CAS-10 (A, C-A, CA) 복합체는 $900^{\circ}C$에서 각각 유전율 ($\varepsilon_r$) 6.4, 6.9, 5.15 와 품질계수 ($Q^*f$) 2,400, 1,500, 3,000의 마이크로파 유전 특성을 나타내어 LTCC 기판 재료로 사용이 가능하며, 특히 $CaAl_2O_4$ 화합물을 사용하였을 때 가장 우수한 유전 특성을 나타내는 것을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.397-404
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• 2009

Effects of ceramic filler types and dose on the low temperature sintering and dielectric properties of ceramic/$CaO-Al_2O_3-SiO_2$ (CAS) glass composites were investigated. All of the specimens were sintered at $850{\sim}900^{\circ}C$ for 2 h, which conditions are required by the low-temperature co-firing ceramic (LTCC) technology. Ceramic fillers of $CaCO_3$, $Al_2O_3$, $CaCO_3-Al_2O_3$ mixture, and $CaCO_3-Al_2O_3$ compound ($CaAl_2O_4$), respectively, were used. The addition of $Al_2O_3$ yielded the crystalline phase of alumina, which was associated with the inhibition of sintering, while, $CaCO_3$ resulted in no apparent crystalline phase but the swelling was significant. The additions of $CaCO_3-Al_2O_3$ mixture and $CaAl_2O_4$, respectively, yielded the crystalline phases of alumina and anorthite, and the sintering properties of both composites increased with the increase of filler addition and the sintering temperature. In addition, the $CaAl_2O_4$/CAS glass composite, sintered at $900^{\circ}C$, demonstrated good microwave dielectric properties. In overall, all the investigated fillers of 10 wt% addition, except $CaCO_3$, yielded reasonable sintering (relative density, over 93 %) and low dielectric constant (less than 5.5), demonstrating the feasibility of the investigated composites for the application of the LTCC substrate materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.176-176
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• 2009

Influences of dose and particle size of $Al_2O_3$ filler and sintering time on the dielectric properties of $Al_2O_3$ filler/CaO-$Al_2O_3-SiO_2$ (CAS) glass composites were investigated with a view to applying the composites to the substrate material in low temperature co-firing ceramic (LTCC) technology. The increased addition of $Al_2O_3$ filler with the particle size of 1 ${\mu}m$ monotonically decreased the density of the sintered specimen at a given temperature, while sintering of the 10 wt% $Al_2O_3$ added specimen at $925^{\circ}C$ for 2 h demonstrated 96.0 % of the relative density, dielectric constant of 6.34, and quality factor of 2,760 GHz. As for the influence of the particle size of the $Al_2O_3$ filler, there existed an optimum particle size (30 ${\mu}m$) to ensure successful densification (96.5 %) of the 10 wt% $Al_2O_3$/CAS composites at $925^{\circ}C$ for 2 h, at which condition the specimen demonstrated dielectric constant of 5.45 and quality factor of 3,740 GHz. When the influence of the sintering time of the 10 wt% $Al_2O_3$) (30 ${\mu}m$) added specimen was investigated at the sintering temperature of $925^{\circ}C$, an overly long sintering time degraded dielectric properties due to the over-sintering and the significant growth of the second phase such as anorthite, while the sintering for 4 h demonstrated 96.58 % of the relative density, dielectric constant of 5.4, and quality factor of 4,050 GHz. These results demonstrate the feasibility of the investigated material as the substrate material in LTCC technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.332-337
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• 2002

The applicability of models based on fractal geometry to characterize the surface of the EL devices was investigated. Insulating layer and phosphor layer of EL devices were deposited on ITO glass using e-beam method. The images of phosphor layer by scanning electron microscope(SEM) were transformed to binary coded data. The relations between fractal geometry and electrical characteristics of EL devices were investigated. When the fractal dimension of $Cas:EuF_3$ EL device was 1.82 and its grain boundary area was 19%, the brightness of $Cas:EuF_3$ EL device was 261 cd/$\textrm{m}^2$.