• 제목/요약/키워드: CMOS photonics

검색결과 19건 처리시간 0.025초

SOI CMOS-Based Smart Gas Sensor System for Ubiquitous Sensor Networks

  • Maeng, Sung-Lyul;Guha, Prasanta;Udrea, Florin;Ali, Syed Z.;Santra, Sumita;Gardner, Julian;Park, Jong-Hyurk;Kim, Sang-Hyeob;Moon, Seung-Eon;Park, Kang-Ho;Kim, Jong-Dae;Choi, Young-Jin;Milne, William I.
    • ETRI Journal
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    • 제30권4호
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    • pp.516-525
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    • 2008
  • This paper proposes a compact, energy-efficient, and smart gas sensor platform technology for ubiquitous sensor network (USN) applications. The compact design of the platform is realized by employing silicon-on-insulator (SOI) technology. The sensing element is fully integrated with SOI CMOS circuits for signal processing and communication. Also, the micro-hotplate operates at high temperatures with extremely low power consumption, which is important for USN applications. ZnO nanowires are synthesized onto the micro-hotplate by a simple hydrothermal process and are patterned by a lift-off to form the gas sensor. The sensor was operated at $200^{\circ}C$ and showed a good response to 100 ppb $NO_2$ gas.

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Performance Comparison of Two Types of Silicon Avalanche Photodetectors Based on N-well/P-substrate and P+/N-well Junctions Fabricated With Standard CMOS Technology

  • Lee, Myung-Jae;Choi, Woo-Young
    • Journal of the Optical Society of Korea
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    • 제15권1호
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    • pp.1-3
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    • 2011
  • We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and $P^+$/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the $P^+$/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.

High-sensitivity NIR Sensing with Stacked Photodiode Architecture

  • Hyunjoon Sung;Yunkyung Kim
    • Current Optics and Photonics
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    • 제7권2호
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    • pp.200-206
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    • 2023
  • Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

광학 박막을 채용한 CMOS 이미지 센서 픽셀의 수광 효율 (Enhancement of Light Guiding Efficiency in CMOS Image Sensor by Introducing an Optical Thin Film)

  • 강명훈;고은미;이제원;조관식
    • 한국광학회지
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    • 제20권1호
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    • pp.57-60
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    • 2009
  • CMOS 이미지 센서의 수광 효율을 높이기 위해서 픽셀의 광 통로 벽에 광학 박막의 도입을 제안하고자 한다. Essential Macleod를 이용하여 시뮬레이션해 본 결과, 전반사가 일어나는 범위가 현저히 증가하였다. 특히 공기 박막을 도입할 경우에, 그 효과가 가장 현저하여, 광 통로 벽에서의 전반사 임계각이 50도로까지 확대되었다.

RGB/NIR CMOS 센서에서 정면 영상과 측면 영상을 동시에 결상하는 캡슐 내시경용 개선된 반사굴절식 전방위 광학계의 광학 설계 (Optical Design of a Modified Catadioptric Omnidirectional Optical System for a Capsule Endoscope to Image Simultaneously Front and Side Views on a RGB/NIR CMOS Sensor)

  • 홍영기;조재흥
    • 한국광학회지
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    • 제32권6호
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    • pp.286-295
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    • 2021
  • RGB/NIR CMOS 센서를 사용하여 가시광에서의 정면 시야각과 가시광(RGB) 및 근적외선(near-infrared, NIR)에서의 측면 시야각을 갖는 캡슐 내시경용 개선된 반사굴절식 전방위 광학계(modified catadioptric omnidirectional optical system, MCOOS)를 설계한다. 전방 시야각 내의 영상은 반사굴절식 전방위 광학계(catadioptric omnidirectional optical system, COOS)의 부경 뒤에 배치된 3개의 추가된 렌즈와 COOS의 결상 렌즈계로 구성된 MCOOS의 전방 결상 렌즈계로 결상한다. 측면 영상은 COOS로부터 얻어진다. 이 센서에 대한 가시광과 근적외선에서의 나이퀴스트 주파수는 각각 90 lp/mm와 180 lp/mm이다. 설계 사양에서 전장길이, F-수, 전방과 측면 반화각은 각각 12 mm, 3.5, 70°, 50°-120°로 결정하였다. MCOOS의 COOS에 대한 변조전달함수 0.3에서의 공간주파수, 초점심도, 가시광과 근적외선 영역에서의 공차에 따른 누적 확률은 각각 154 lp/mm, -0.051-+0.052 mm, 99%이다. MCOOS의 정면 결상광학계의 변조전달함수 0.3에서의 공간주파수, 초점 심도, 가시광 영역에서 공차에 따른 누적 확률은 각각 170 lp/mm, -0.035-0.051 mm, 99.9%이다.

CMOS IC와 집적 가능한 비정질 p-i-n 광 수신기 제작에 관한 연구 (A study on the amorphous s-i-n photodiode integrated with CMO IC)

  • 곽철호;유회준;장진;문병연
    • 한국광학회지
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    • 제8권6호
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    • pp.500-505
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    • 1997
  • 광 수신기를 전자 논리 소자에 집적하기 위하여 발생되는 여러 문제점들을 개선하기 위하여 a-Si:H p-i-n 구조를 사용하여 CMOS IC위에 비정질 광 수신기를 제작하였다. 비정질 물질인 a-Si:H을 도입함으로써 PECVD와 같이 저온 공정을 진행하는 장비를 사용할 수 있도록 하여 이미 제작된 IC의 특성이나 구조 특히 금속 배선을 파괴하지 않으면서 집적할 수 있게 하였다. CMOS IC 위에 제작된 비정질 p-i-n 광 수신기는 양호한 순방향 전압 특성을 가지고 있었으며 누설 전류는 약 0.1$\mu\textrm{A}$ 정도, 항복 전압 -20V 이하의 특성을 보였다. 또한 레이저 다이오드 광 신호에 대한 광 수신기의 광 반응 특성을 실험하여 광 신호 검출을 조사함으로써 1V 이하의 작은 전압 스위칭을 통하여 광 검출의 On/Off를 제어할 수 있음을 관찰하였다. 이러한 특성을 이용하면 현재 광 도파로에서 빛 신호를 스위칭 하거나 modulation 할 때 발생하는 고전압 관련 문제점들을 해결할 수 있기 때문에 광 스위치로도 유용하게 이용될 수 있을 것으로 생각되며 나아가서는 광 interconnection에 매우 유용할 것으로 사료된다.

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Surface Emitting Terahertz Transistor Based on Charge Plasma Oscillation

  • Kumar, Mirgender;Park, Si-Hyun
    • Current Optics and Photonics
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    • 제1권5호
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    • pp.544-550
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    • 2017
  • This simulation based study reports a novel tunable, compact, room temperature terahertz (THz) transistor source, operated on the concept of charge plasma oscillation with the capability of radiating within a terahertz gap. A vertical cavity with a quasi-periodic distributed-Bragg-reflector has been attached to a THz plasma wave transistor to achieve a monochromatic coherent surface emission for single as well as multi-color operation. The resonance frequency has been tuned from 0.5 to 1.5 THz with the variable quality factor of the optical cavity from 5 to 290 and slope efficiency maximized to 11. The proposed surface emitting terahertz transistor is able to satisfy the demand for compact solid state terahertz sources in the field of teratronics. The proposed device can be integrated with Si CMOS technology and has opened the way towards the development of silicon photonics.

The Optical Measurement and Quantitative Analysis of Algesia in Spodoptera litura Larva

  • Chen, Ying-Yun;Chang, Rong-Seng;Tsai, Mi-Yin;Chen, Der-Chin
    • Journal of the Optical Society of Korea
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    • 제19권2호
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    • pp.169-174
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    • 2015
  • Muscle vibration measurement has long been an unique scientific study, in general, and the direct reaction of animals to feel pain (algesia), either from vascular or muscle contraction, is a complex perceptual experience. Thus this paper proposes a way to measure animal algesia quantitatively, by measuring the changes in muscle vibration due to a pinprick on the surface of the skin of a Spodoptera litura larva. Using the laser optical triangulation measurement principle, along with a CMOS image sensor, linear laser, software analysis, and other tools, we quantify the subtle object point displacement, with a precision of up to $10{\mu}m$, for our chosen Spodoptera litura larva animal model, in which it is not easy to identify the tiny changes in muscle contraction dynamics with the naked eye. We inject different concentrations of formalin reagent (empty needle, 12% formalin, and 37% formalin) to obtain a variety of different muscle vibration frequencies as the experimental results. Because of the high concentrations of reagent applied, we see a high frequency shift of muscle vibration, which can be presented as pain indices, so that the algesia can be quantified.

Covered Microlens Structure for Quad Color Filter Array of CMOS Image Sensor

  • Jae-Hyeok Hwang;Yunkyung Kim
    • Current Optics and Photonics
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    • 제7권5호
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    • pp.485-495
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    • 2023
  • The pixel size in high-resolution complementary metal-oxide-semiconductor (CMOS) image sensors continues to shrink due to chip size limitations. However, the pixel pitch's miniaturization causes deterioration of optical performance. As one solution, a quad color filter (CF) array with pixel binning has been developed to enhance sensitivity. For high sensitivity, the microlens structure also needs to be optimized as the CF arrays change. In this paper, the covered microlens, which consist of four microlenses covered by one large microlens, are proposed for the quad CF array in the backside illumination pixel structure. To evaluate the optical performance, the suggested microlens structure was simulated from 0.5 ㎛ to 1.0 ㎛ pixels at the center and edge of the sensors. Moreover, all pixel structures were compared with and without in-pixel deep trench isolation (DTI), which works to distribute incident light uniformly into each photodiode. The suggested structure was evaluated with an optical simulation using the finite-difference time-domain method for numerical analysis of the optical characteristics. Compared to the conventional microlens, the suggested microlens show 29.1% and 33.9% maximum enhancement of sensitivity at the center and edge of the sensor, respectively. Therefore, the covered microlens demonstrated the highly sensitive image sensor with a quad CF array.

반데르발스 2차원 반도체소자의 응용과 이슈 (Trend and Issues of van der Waals 2D Semiconductor Devices)

  • 임성일
    • 진공이야기
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    • 제5권2호
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    • pp.18-22
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    • 2018
  • wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.