• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.67-72
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• 2013

Temperature is a critical parameter in yield improvement for wafer manufacturing. In chemical vapor deposition (CVD) equipment, crack defect in ceramic heater leads to yield reduction, however, there is no suitable ceramic heater fault detection system for conventional CVD equipment. This paper proposes a short-time zero-crossing rate based fault detection method for the ceramic heater in CVD equipment. The proposed method measures the output signal ($V_{pp}$) of RF filter and extracts the zero-crossing rate (ZCR) as feature vector. The extracted feature vectors have a discriminant power and Gaussian mixture model (GMM) based fault detection method can detect fault in ceramic heater. Experimental results, carried out by measured signals provided by a CVD equipment manufacturer, indicate that the proposed method detects effectively faults in various process conditions.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.16-21
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• 2020

How accurately reproducible energy is delivered to the wafer in the process of making thin films using PE-CVD (Plasma enhanced chemical vapor deposition) during the semiconductor process. This is the most important technique, and most of the reaction on the wafer surface is made by thermal energy. In this study, we studied the method of monitoring the change of thermal energy transferred to the wafer surface by monitoring the temperature change according to the change of the thin film formed on the showerhead facing the wafer. Through this research, we could confirm the monitoring of wafer thin-film which is changed due to abnormal operation and accumulation of equipment, and we can expect improvement of semiconductor quality and yield through process reproducibility and equipment status by real-time monitoring of problem of deposition process equipment performance.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.67-72
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• 2020

This study analyzes the method of adhesion and improvement between heat.er and RF filter in PE-CVD equipment through TRIZ method and proposes a solution. TRIZ Solution such as function analysis, 9-window matrix, ASIT, and Root cause analysis were used. The contact temperature between the heater and the RF filter was 20% and the surface temperature was lowered to 5.7℃, suggesting an improvement method for the thermal expansion of the PE-CVD equipment hot zone.

• 한국시뮬레이션학회:학술대회논문집
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• 한국시뮬레이션학회 2000년도 춘계학술대회 논문집
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• pp.142-147
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• 2000

본 연구의 주안점을 실험용 CVD 장치의 CVD 반응기 내에 투입된 기체의 농도와 온도를 즉시 측정하여 새로운 소자 개발 시에 공정모델 수립과 정밀도를 요하는 공정에서 증착량과 속도에 대한 데이터를 구하므로써 효율적인 CVD 장치를 구성하는 것으로서 실험실이나 연구소에서 정확한 CVD 공정모델 실험을 할 수 있게 하여 새로운 소자의 시뮬레이션 모델을 만들 수 있는 효과적인 성장방법의 개발을 통하여 원료기체의 효율적인 사용이 이루어지도록 반응기내에서 가스 및 온도제어 시스템을 개발하였다.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.

• 한국재료학회지
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• 제29권11호
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• pp.670-676
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• 2019

We study substrate support structures and materials to improve uptime and shorten preventive maintenance cycles for chemical vapor deposition equipment. In order to improve the rolling of the substrate support, the bushing device adopts a ball transfer method in which a large ball and a small ball are mixed. When the main transfer ball of the bushing part of the substrate support contacts the substrate support, the small ball also rotates simultaneously with the rotation of the main ball, minimizing the resistance that can be generated during the vertical movement of the substrate support. As a result of the improvement, the glass substrate breakage rate is reduced by more than 90 ~ 95 %, and the equipment preventive maintenance and board support replacement cycles are extended four times or more, from once a month to more than four months, and the equipment uptime is at least 15 % improved. This study proposes an optimization method for substrate support structure and material improvement of chemical vapor deposition equipment.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.133-137
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• 2023

This study the problem of deposition uniformity observed during Mist-CVD deposition experiments. The TRIZ's ADRIGE algorithm, a problem-solving technique, is utilized to systematically analyze the issue and propose solutions. Through problem and resource analysis, technical contradictions are identified regarding the precursor's volume and its path when it encounters the substrate. To resolve these contradictions, the concept of applying the principle of dimensional change to transform the precursor's three-dimensional path into a one-dimensional path is suggested. The chosen solution involves the design of an enhanced Mist-CVD system, which is evaluated for feasibility and analyzed using computational fluid dynamics. The analysis confirms that the deposition uniformity consistently follows a pattern and demonstrates an improvement in uniformity. The improved Mist-CVD equipment is validated through analysis, providing evidence of its feasibility and yielding satisfactory results.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.101-104
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• 2022

Mist-CVD is known to have advantages of low cost and high productivity compared to ALD and PECVD methods. It is capable of reacting to the substrate by misting an aqueous solution using ultrasonic waves under vacuum-free conditions of atmospheric pressure. In particular, Ga₂O₃ is regarded as advanced power semiconductor material because of its high quality of transmittance, and excellent electrical conductivity through N-type doping. In this study, Computational Fluid Dynamics were used to predict the uniformity of the thin film on a large-area substrate. And also the deposition pattern and uniformity were analyzed using the flow velocity and particle tracking method. The uniformity was confirmed by quantifying the deposition cross section with an FIB-SEM, and the consistency of the uniformity prediction was secured through the analysis of the CFD distribution. With the analysis and experimental results, the match rate of deposition area was 80.14% and the match rate of deposition thickness was 55.32%. As the experimental and analysis results were consistent, it was confirmed that it is possible to predict the deposition thickness uniformity of Mist-CVD.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 춘계학술대회 발표 논문집
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• pp.1-3
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• 2003

평판형 안테나를 채택한 TCP (Transformer Coupled Plasma) 형태의 CVD 장비를 이용하여 비정질의 실리콘 박막을 증착 하였다. 비정질 실리콘 박막은 태양전지 및 TFT-LCD 등의 디스플레이 제품 등에 다양하게 적용되고 있는데, 일반적으로 CCP(Capacitor Coupled Plasma) 형태의 CVD 장비에서 증착되어 왔다. TCP-CVD 장비는 CCP-CVD에 비해 플라즈마 내의 높은 이온밀도 및 저압, 저온에서 공정이 가능할 뿐만 아니라, 기판 바이어스 전압을 독립적으로 조절할 수 있어 이은에 의한 증착막의 결함을 낮출 수 있는 장점이 있다. 본 발표에서는 자체 기술로 제작된 TCP-CVD의 소개와 증착된 비정질 실리콘 박막의 특성평가를 위한 라만 분석 및 dark conductivity 데이타를 다루었다. 또한 비정질 실리콘 박막의 반도체 소자의 응용성을 보기 위하여 3족 및 5족의 불순물을 도핑하여 전기전도도의 변화를 측정하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.593-597
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• 2005

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\phi}$ 10nm and smaller is available. Currently FIB is not being applied in the fabrication of this micro part because of some problems to redeposition and charging effect of the substrate causing reduction of accuracy with regards to shape and productivity. Furthermore, the prediction of the material removal rate information should be required but it has been insufficient for micro part fabrication. The paper have the targets that are FIB-CVD characteristic analysis and minimum line pattern resolution achievement fur 3D micro fabrication. We make conclusions with the analysis of the results of the experiment according to beam current, pattern size and scanning parameters. CVD of 8 pico ampere shows superior CVD yield but CVD of 1318 pico ampere shows the pattern sputtered. And dwell time is dominant parameter relating to CVD yield.