• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.374.1-374.1
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• 2016

Copper and zinc are well known elements with antibacterial effect. So in this research, Cu and Zn (CZ) nanofibers (NFs) were fabricated by electrospinning method using polyvinylpyrrolidone (PVP) for adjusting viscosity. The CZ/PVP precursor solutions were prepared with copper sulfate pentahydrate, and zinc acetate dihydrate. Distilled water was used for solvent and PVP was used to regulate the viscosity of precursor solution. The CZ/PVP NF composites were obtained by electrospinning method using the precursor solution. The average diameter of obtained CZ/PVP NFs was determined by optical microscopy using Motic image plus 2.0 program and was found to be 490 nm. The chemical environment of the obtained CZ/PVP NF composites was investigated with X-ray photoelectron spectroscopy (XPS). After heating the obtained CZ/PVP NF composites at 353 K, the solvent was removed. The characteristic C 1s, Cu 2p, and Zn 2p core level XPS peaks were observed. After calcination the CZ/PVP NF composites at 873 K in Ar environment for 5 hrs, PVP was decomposed at this temperature and CZ NF was obtained. This was confirmed by decreasing the intensity of C 1s.

• Korean Chemical Engineering Research
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• v.51 no.1
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• pp.47-52
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• 2013

In this study, the catalytic performance and characterization of $Ni/Ce_xZr_{1-x}O_2$ were investigated using an autothermal reforming (ATR) process for hydrogen production. The $Ni/Ce_xZr_{1-x}O_2$ catalysts were prepared using the following methods: the water method (CZ-W), urea water method (CZ-UW) and urea, water and ethanol method (CZ-UWA). The performance of $Ni/Ce_xZr_{1-x}O_2$ catalysts in autothermal reforming of propane for hydrogen production was studied in a fixed-bed flow reactor. Reaction tests were conducted by using a feed of $H_2O/C_3H_8/O_2$=3/1/0.37 and $300{\sim}700^{\circ}C$. The CZ-UW and CZ-UWA catalysts showed higher propane conversion and hydrogen yield than the CZ-W catalyst. The activity test confirmed that the improvement in the water-ethanol catalyst was due to the low level of carbon deposition. SEM showed that the surface carbon consisted of clusters on the used CZ-UW catalyst, which is incontrast to the nano-fiber morphology observed on the used CZ-UWA catalyst. It was found that the amount of carbon deposition depends on the preparation method. Especially the $Ni/Ce_{0.75}Zr_{0.25}O_2$ was showed higher propane conversion and hydrogen yield than the other catalysts. Also TGA showed that the resistance of carbon deposition increase to Co addition.

• Journal of Technologic Dentistry
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• v.34 no.2
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• pp.129-134
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• 2012

Purpose: This study was conducted to investigate the colors of zirconia and veneered ceramics according to the build-up method of veneer porcelain. Methods: The samples were divided into three groups: a group for which a liner was applied to the zirconia surface and dentine coating was built up and burned (Cz1), a group for which the dentine coating was directly built up and burned (Cz2), and a group for which the samples were wash-burned with dentine coating and a dentine coating was built up and burned again (Cz3). The the colors were measured with a Spectrophoto-meter. Results: The average $L^*$ value of the Cz3 group was the highest among the groups at $59.1{\pm}0.5$ (P<0.05), followed by Cz2 at $57.5{\pm}0.8$ and Cz1 at $56.6{\pm}1.3$. The $a^*$ value of Cz3 was negative at $-0.0{\pm}0.0$ and the $a^*$ values of Cz2 and Cz1 were positive at $0.2{\pm}0.1$ and $0.4{\pm}0.0$, respectively (P<0.05). The $b^*$ of Cz1 was the highest at $11.2{\pm}0.6$, followed by Cz3 at $10.8{\pm}0.5$ and Cz2 at $10.5{\pm}0.8$ (P<0.05). Conclusion: Compared to other experimental groups, the Cz3 groups showed the brightest colors with high brightness and relatively low green and yellow levels.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.265-271
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• 2013

Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal for LED application. In this study, the inductively-heated CZ growth processes for the sapphire crystal of 300 mm length have been analyzed numerically using finite element method. The hot zone structures were modified with the crucible geometry change and the additional insulation layer installed above the crucible. The results show that the solid-liquid interface height decreased from about 80 mm at initial stage to 40 mm after mid-stage due to achieve the growth speed balance. Also the optimal input power of the modified system was similar with the original one due to the compensation effects of the crucible geometry and additional insulation. The crystal temperature grown by the modified CZ grower was increased about 10 K than the original one. Therefore the sapphire crystal of 300 mm height was grown successfully.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.5
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• pp.193-198
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• 2011

Recently sapphire crystals are used in LED applications. The Czochralski (CZ) growth process is one of the most important techniques for growing high quality sapphire single crystal. A successful growth of perfect single crystals requires the control of heat and mass transport phenomena in the CZ growth furnace. In this study, the growth processes of the sapphire crystal in an inductively heated CZ furnace have been analyzed numerically using finite element method. The results shown that the high temperature positions moved from the crucible surface to inside the melt and the crystal-melt interface changed to the flat shape when the rpm was increased. Also the crystal-melt interface shape has been influenced by the shoulder shape of the grown crystal during the initial stage.

• Korean Journal of Materials Research
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• v.2 no.2
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• pp.119-125
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• 1992

Oxygen segregation in horizontal-magnetic-field-applied Czochralski (HMCZ) silicon crystals has been studied as a function of magnetic field strength (B) and crucible rotation rate (C). Along the axis of 57mm din. <100> crystals grown under B=2, 3, 4 kG and C=4-15rpm, the oxygen distribution was usually saw-tooth shaped and fluctuated unevenly. Compared to the conventional CZ method, this result seems to indicate that the horizontal magnetic field, at levels used in the present experiment, had a destabilizing influence on oxygen transport to the growth interface. On the other hand, as C increased, the oxygen fluctuation lessened, and [0] increased overall. At B=2 kG, an oxygen profile in a level of 27-36 ppma was achieved by a programmed ramp of C. Oxygen precipitation behavior of the HMCZ silicon during a simulated device manufacturing process was compared and found to be inferior to that of typical CZ silicon. The uneven oxygen profile in the as-grown state was identified as the major source of poor precipitation uniformity in the HMCZ silicon.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.91-96
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• 2023

To verify the quality of bubbles during the use of quartz glass crucibles (QC), an appropriate accelerated testing method was proposed. The bubble state of discarded waste crucibles obtained from actual Czochralski (Cz) processes was analyzed, and optimal heat treatment conditions were suggested by varying temperature, pressure, and time using the QC test piece. By subjecting the samples to heat treatment at 1450℃, 0.4 Torr, and 40 hours, it was possible to control the bubble size and density to a similar level as those generated in the actual Cz process. In particular, by selecting a relatively lower pressure of 0.4 Torr compared to the typical range of 10~20 Torr applied in the Cz process, the time required for accelerated bubble formation testing could be reduced. However, it was determined that increasing the heat treatment temperature to 1550℃ led to the phenomenon of Ostwald ripening, resulting in larger bubbles and a rapid decrease in density. Therefore, it was concluded that it was not a suitable condition for the desired b ake test.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.140-145
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• 2008

Silicon single crystals are grown by Czochralski (CZ) method in different growing conditions. The different shapes of the crystal-melt interface are obtained with various magnetic fields. Effects of zero-Gauss plane (ZGP) shape and magnetic intensity (MI) on the crystal-melt interface in the crystal experimentally are investigated. The shape of ZGP is not only flat but also parabolic, which is due to magnetic ratio (MR) of the lower to upper current densities in the configurations of the cusp-magnetic fields. As the MR increases, the crystal-melt interface becomes more concave. It means that the hot melt can be easily transported to the crystal-melt interface with increasing the MR. Effective shape of the crystal-melt interface is found to depend on the magnetic field in cusp-magnetic CZ method. The experimental results are compared with other studies and discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.1-10
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• 1995

Congruent $LiNbO_3$ single crystals and $LiNbO_3$ : Mg single crystals, having high resistance to optical damage, doped with MgO to the levels of 2.0, 5.0 and 7.0 mol% were grown successfully by CZ method and optical damage of each crystal was measured by compen. sation method. With doping level reaching about 5 mol%, there was an abrupt change in the features of optical absorption edge and $OH^-$ absorption band. From these data, we confirmed indirectly the threshold in MgO doping level. When the MgO doping amount reaches about 5 mol% in the melt, $Mg^{2+}$ occupies Nb site and becomes $Mg_{Nb}^{2+}$, resulting in the sharp increase of optical damage resistance. The optical damage resistance of $LiNbO_3$ : Mg was improved more than three times when MgO amount in the melt reaches 5 mol%.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.45-48
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• 1998

For the single crystal growth of silicon, a global analysis of heat transfer in a CZ furnace was carried out using the finite element method, where the radiative heat transfer between the surfaces that possess both specular and/or diffuse reflectance components was taken into account, and then the effect of the specular reflection of the crystal and/or melt on the CZ crystal growth was numerically investigated.