• Title/Summary/Keyword: Capacitance-voltage relation

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Capacitive Touch Switch Regardless of Operating Frequency Using a Switched-Capacitor (스위치드 커패시터를 이용한 동작 주파수에 무관한 정전용량 터치스위치)

  • Lee, Mu-Jin;Seong, Kwang-Su
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.6
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    • pp.88-94
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    • 2013
  • This paper proposes a capacitive touch switch using a switched-capacitor. The proposed method charges capacitance for measurement using the switched-capacitor until the voltage across the capacitance reaches a threshold voltage. As the proposed method uses the number of times being charged to measure the capacitance, the method has no relation with the operating frequency of the switched-capacitor. This paper also shows the quantization resolution of the proposed method is related to the capacitance in the switched-capacitor and the threshold voltage, i.e., the resolution is improved when the capacitance in the switched-capacitor is decreased and the threshold voltage is increased. Simulation result shows the method gives 31fF quantization resolution when the capacitance in the switched-capacitor is 50fF and threshold voltage is 80% of the supply voltage.

Electrochemical Characteristics of Highly Porous Carbon Prepared by Chemical Activation Method for EDLC (화학적 활성법으로 제조된 EDLC용 고다공성 탄소전극의 전기화학 특성)

  • Eo, Soo-Mi;Kim, Han-Joo;Oh, Seung-Mo;Park, Soo-Gil
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2010-2012
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    • 2005
  • Activated carbon was activated with chemical treatment to attain high surface area with porous structure. We have been considered activated carbon is the ideal material for high voltage electric double layer capacitor due to their high specific surface area, good conductivity and chemical stability. In this study we found that increase in electrochemical capacitance due to activated carbon. Also chemically activated carbon and water treatment have resulted larger capacitance and also exhibits better electrochemical behavior, and is about 15% more than in untreated state. The structural change in activated carbon through chemical treatment activation was investigated by using SEM and XRD. In this study, the dependence of the activation behavior with KOH in the micro structure of host materials will be discussed. Furthermore, the relation to the electric double layer capacitance, especially the specific capacitance per unit area, is also discussed.

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Relation between Resistance and Capacitance in Atomically Dispersed Pt-SiO2 Thin Films for Multilevel Resistance Switching Memory (Pt 나노입자가 분산된 SiO2 박막의 저항-정전용량 관계)

  • Choi, Byung Joon
    • Korean Journal of Materials Research
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    • v.25 no.9
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    • pp.429-434
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    • 2015
  • Resistance switching memory cells were fabricated using atomically dispersed Pt-$SiO_2$ thin film prepared via RF co-sputtering. The memory cell can switch between a low-resistance-state and a high-resistance-state reversibly and reproducibly through applying alternate voltage polarities. Percolated conducting paths are the origin of the low-resistance-state, while trapping electrons in the negative U-center in the Pt-$SiO_2$ interface cause the high-resistance-state. Intermediate resistance-states are obtained through controlling the compliance current, which can be applied to multi-level operation for high memory density. It is found that the resistance value is related to the capacitance of the memory cell: a 265-fold increase in resistance induces a 2.68-fold increase in capacitance. The exponential growth model of the conducting paths can explain the quantitative relationship of resistance-capacitance. The model states that the conducting path generated in the early stage requires a larger area than that generated in the last stage, which results in a larger decrease in the capacitance.

Instantaneous Voltage Control of PWM Converters Using Feedback Linearization (궤환선형화 기법을 이용한 PWM 컨버터의 순시전압 제어)

  • 이지명;이기도;이동춘
    • The Transactions of the Korean Institute of Power Electronics
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    • v.4 no.2
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    • pp.175-183
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    • 1999
  • For fast response of the dc output voltage in P\hi1'v1 converter, it is desirable that the relation of power balance of the i input and output terminals is introduced to the system modeling. In this case, controller desi밍1 is not easy since the m model is nonlinear. In this paper, a nonlinear control them${\gamma}$ using input-output feedback linearization is used to solve t the nonlinear problem of the system. By nonlinear control. the voltage transient response can be faster, and it is also p possible to control the output voltage to be constant with smaller output filter capacitance for load disturbance.

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Magnetic vibration analysis for FEM simulation and experiment of single phase induction motor (단상유도전동기의 FEM시뮬레이션과 실험에 의한 자기적 진동원 분석)

  • Kim, Cherl-Jin;Choi, Chul-Yong;Kim, Hyun-Il;Choi, Geun-Soo;Baek, Soo-Hyun
    • Proceedings of the KIEE Conference
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    • 2003.07b
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    • pp.945-947
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    • 2003
  • Various kinds of practical machines using single phase induction motor(SPIM) are necessary to control speed and torque. In particular, capacitor-run type SPIM has constitutional characteristics, the motor torque is changed by auxiliary capacitance variation. In this study, we manifest equivalent model having more simplicity, and study the relation between torque and capacitance value of SPIM. And analyze Magnetic vibration for FEM(Finite Element Method) simulation. Also, We design the experimental controller which is able to speed control accurately by phase angle control of AC input voltage. Through the simulation and experimental results, we confirmed validity of this study.

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Determination of Potential Barrier Heights at the Grain Boundaries of PTC Ceramics (PTC 세라믹 입계의 전위장벽 측정)

  • 조성걸;이영근
    • Journal of the Korean Ceramic Society
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    • v.38 no.7
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    • pp.639-642
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    • 2001
  • 전형적인 비저항-온도 특성을 갖는 BaTiO$_3$계 PTC 세라믹을 일반적인 세라믹 공정을 이용하여 제조하였고, 결정립계면에 형성된 전위장벽의 높이를 구하였다. ZnO 바리스터의 전위장벽을 구하기 위해 이용되었던 커패시턴스-전압 관계식과는 다른 새로운 관계식을 제안하였고, 기존의 비저항-온도 관계식을 다소 변경한 관계식을 이용하여 전위장벽을 구하였다. 두 관계식으로부터 구한 전위장벽의 높이는 매우 유사한 값을 보이고 있으며 타 연구자들에 의해 보고된 값과도 잘 일치하고 있다. 비저항-온도 관계식과 커패시턴스-전압 관계식을 이용하여 130-18$0^{\circ}C$ 구간에서 구한 전위장벽의 크기는 각각 0.41-0.76V와 0.36-0.80V이었다.

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Frequency Characteristics of Anodic Oxide Films: Effects of Anodization Valtage

  • Lee, Dong-Nyung;Yoon, Young-Ku
    • Nuclear Engineering and Technology
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    • v.6 no.1
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    • pp.14-22
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    • 1974
  • Effects of anodization voltage on frequency characteristics of anodic oxide films on tantalum were analyzed based on the following impedance equatious : (equation omitted) Here $R_{f}$, $C_{f}$ and tan $\delta$$_{f}$ are equivalent series resistance in ohm, equivalent Belies capacitance in farad and dielectric loss, of anodic oxide films respectively Parameters P, $\tau$$_{ο}$, $\tau$$_{\omega}$, and Co are defined as follows: P=(d-w)/w, $\tau$$_{ο}$=$textsc{k}$$\rho$$_{ο}$, $\tau$$_{\omega}$=$textsc{k}$$\rho$$_{\omega}$, $C_{ο}$=$textsc{k}$A/d where d is the thickness of oxide film, $\omega$ is the diffusion layer thickness. $\rho$$_{ο}$ is the resistivity of oxide film at the interface of metal and the oxide, $\rho$$_{\omega}$ is the resistivity of oxide film at intrinsic region and A is the area of the film and $textsc{k}$=0.0885$\times$10$^{-12}$ $\times$dielectric constant, (in farad/cm). It was shown that dielectric loss and frequency dependence of equivalent series capacitance decrease as anodization voltage increases. This is a consequence of the fact that the thickness of diffusion layer increases a little with increasing anodization voltage whereas the total oxide thickness is proportional to the anodization voltage. The ngative deviation of measured values from tile relation, tan $\delta$$_{f}$=0.682 $\Delta$ $C_{f}$, was also discussed based on the Impedance equations given above. Here $\Delta$ $C_{f}$ is the change in capacitance between 0.1 and 1 KHZ.KHZ.Z.

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On the Stability of the Push-Pull Current-Fed DC-DC Converter (전류형 DC-DC 콘버어터의 안정성에 관하여)

  • ;原田 #介
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.3
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    • pp.54-59
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    • 1985
  • From the foregoing papers, it has been clarified that the push-pull current-fed DC-DC converter is excellent in stability as compared with the other conventional DC-DC con-verters. The relation between the stability of the converter and the capacitance of smoothing condenser is analyzed, considering the ESR of smoothing condenser and the 1 st order phase lag of the feedback circuit. From the results, it is known that when the capacitance of smoothing condenser is reduced, the stability of the converter is also excellent as compared with the conventional buck type converter, whereas there are limitations for practical use, since the ripple of output voltage increases by increasing of output current.

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Process Modeling and Optimization Studies in Drying of Current Transformers

  • Bhattacharya, Subhendu;D'Melo, Dawid;Chaudhari, Lokesh;Sharma, Ram Avatar;Swain, Sarojini
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.6
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    • pp.273-277
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    • 2012
  • The vacuum drying process for drying of paper in current transformers was modeled with an aim to develop an understanding of the drying mechanism involved and also to predict the water collection rates. A molecular as well as macroscopic approach was adopted for the prediction of drying rate. Ficks law of diffusion was adopted for the prediction of drying rates at macroscopic levels. A steady state and dynamic mass transfer simulation was performed. The bulk diffusion coefficient was calculated using weight loss experiments. The accuracy of the solution was a strong function of the relation developed to determine the equilibrium moisture content. The actually observed diffusion constant was also important to predict the plant water removal rate. Thermo gravimetric studies helped in calculating the diffusion constant. In addition, simulation studies revealed the formation of perpetual moisture traps (loops) inside the CT. These loops can only be broken by changing the temperature or pressure of the system. The change in temperature or pressure changes the kinetic or potential energy of the effusing vapor resulting in breaking of the loop. The cycle was developed based on this mechanism. Additionally, simulation studies also revealed that the actual mechanism of moisture diffusion in CT's is by surface jumps initiated by surface diffusion balanced against the surrounding pressure. Every subsequent step in the cycle was to break such loops. The effect of change in drying time on the electrical properties of the insulation was also assessed. The measurement of capacitance at the rated voltage and one third of the rated voltage demonstrated that the capacitance change is within the acceptance limit. Hence, the new cycle does not affect the electrical performance of the CT.

Modeling of GMR Isolator for Data Transmission Utilizing Spin Valves (스핀밸브를 이용한 데이터 전송용 GMR 아이솔레이터의 모델링)

  • Park, S.;Kim, J.;Jo, S.
    • Journal of the Korean Magnetics Society
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    • v.14 no.3
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    • pp.109-113
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    • 2004
  • GMR isolator was modeled using a Wheatstone bridge which is profitable for transmitting rectangular wave digital data, and the output voltage characteristics in relation to the input current were investigated in time domain. GMR isolator modeling was divided into two parts, namely magnetic and electric parts. The flow chart of the modeling was drawn in which measured MR curve of the spin valves were incorporated to obtain the electrical voltage output. For magnetic modeling, 3-dimensional model of planar coil was analyzed by FEM method to obtain the magnetic field strength corresponding to the input current. For electric modeling, resistance, inductance and capacitance of the planar coil were calculated and magnetic field waveform was obtained corresponding to the coil current waveform in time domain. Finally, MR-H curves of spin valves and the magnetic field waveform at the spin valves were composited to obtain the output voltage waveform of the isolator. Even though the amplitude of the coil current waveform was increased by 100%, decreased by 90%, or delayed by 10% of the period compared with the input current, similar transmitted output voltage waveform to the input current waveform was obtained due to hysteretic characteristics of the spin valves at the transmission speed of over 400 Mbit/s.