• Title/Summary/Keyword: Capacitively Coupled

Search Result 149, Processing Time 0.027 seconds

Multi-hole RF CCP 방전에서 방전 주파수가 미치는 영향

  • Lee, Heon-Su;Lee, Yun-Seong;Seo, Sang-Hun;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.145-145
    • /
    • 2011
  • Recently, multi-hole electrode RF capacitively coupled plasma discharge is being used in the deposition of microcrystalline silicon for thin film solar cell to increase the speed of deposition. To make efficient multi-hole electrode RF capacitively coupled plasma discharge, the hole diameter is to be designed concerning the plasma parameters. In past studies, the relationship between plasma parameters such as pressures and gas species, and hole diameter for efficient plasma density enhancement is experimentally shown. In the presentation, the relationship between plasma deriving frequency and hole diameter for efficient multi-hole electrode RF capacitively coupled plasma discharge is shown. In usual capacitively coupled plasma discharge, plasma parameter, such as plasma density, plasma impedence and plasma temperature, change as frequency increases. Because of the change, the optimum hole diameter of the multi-hole electrode RF capacitively coupled plasma for high density plasma is thought to be modified when the plasma deriving frequency changes. To see the frequency effect on the multi-hole RF capacitively coupled plasma is discharged and one of its electrode is changed from a plane electrode to a variety of multi-hole electrodes with different hole diameters. The discharge is derived by RF power source with various frequency and the plasma parameter is measured with RF compensated single Langmuir probe. The shrinkage of the hole diameter for efficient discharge is observed as the plasma deriving frequency increases.

  • PDF

Capacitively Coupled Plasma Simulation for Low-k Materials Etching Process Using $H_2/N_2$ gas (저 유전 재료의 에칭 공정을 위한 $H_2/N_2$ 가스를 이용한 Capacitively Coupled Plasma 시뮬레이션)

  • Shon, Chae-Hwa
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.55 no.12
    • /
    • pp.601-605
    • /
    • 2006
  • The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multi-layer interconnections in smaller scales with higher integration density. Low-k materials are applied to the inter-metal dielectric (IMD) materials in order to overcome the RC delay. Relaxation continuum (RCT) model that includes neutral-species transport model have developed to model the etching process in a capacitively coupled plasma (CCP) device. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with $N_2/H_2$ gas mixture that is known as promising one for organic low-k materials etching. For the etching of low-k materials by $N_2/H_2$ plasma, N and H atoms have a big influence on the materials. Moreover the distributions of excited neutral species influence the plasma density and profile. We include the neutral transport model as well as plasma one in the calculation. The plasma and neutrals are calculated self-consistently by iterating the simulation of both species till a spatio-temporal steady state profile could be obtained.

New UWB BPF with Steep Selectivity Based on T-Resonator and Capacitively Coupled λ/4 and λ/2 Line Sections

  • Duong, Thai Hoa;Kim, Ihn-Seok
    • Journal of electromagnetic engineering and science
    • /
    • v.9 no.3
    • /
    • pp.164-173
    • /
    • 2009
  • In this paper, two new circuit structures for European and U.S. ultra-wide band(UWB) bandpass filters(BPFs) with sharp roll-off characteristics are introduced. We show first that the ultra-wide bandpass property is obtained from a $\lambda$/4 open T resonator with a capacitively coupled $\lambda$/4 short-circuited line, which provides two attenuation poles at lower and upper cutoff frequencies. Then, two identical capacitively coupled input/output lines, which can be $\lambda$/4-length open ends or $\lambda$/2-length short ends, with the T-resonator, are adopted to suppress lower and higher frequency components outside of the pass band. There is coupling between the input and output lines providing two additional transmission zeros in the lower and upper transition bands of the filter. Since the coupling between the T-resonator with the $\lambda$/4 short-circuited line and the input/output lines limits the bandwidth of the filter to the European UWB band, both the $\lambda$/4 short-circuited line and the input/output lines are inserted between the two stacked T-resonators for the U.S. UWB band. The filter structures are simulated with ADS and HFSS and realized with low-temperature co-fired ceramic(LTCC) green tape which has the dielectric constant of 7.8. Measurement results agree well with HFSS simulation results.

Wideband Bandstop Filter Based on Capacitively Coupled λ/4 Short-Circuited Lines

  • Duong, Thai Hoa;Kim, Ihn-Seok
    • Journal of electromagnetic engineering and science
    • /
    • v.10 no.3
    • /
    • pp.92-98
    • /
    • 2010
  • A new wideband bandstop filter(BSF) with a sharp roll-off characteristic is introduced in a stripline structure in this paper. The BSF consists of two sections: the first is two capacitively coupled $\lambda/4$ short-circuited lines with opposite ground positions, while the second is a capacitively coupled $\lambda/4$ short-circuited line. The BSF provides three transmission zeros within the stopband and better than 22 dB rejection over the whole wireless local area network (WLAN) band from 5.15 to 5.825 GHz. The BSF, cascaded to an U.S. ultra-wideband(UWB: 3.1~10.6 GHz) band-pass filter(BPF), is simulated with HFSS and realized with low-temperature co-fired ceramic(LTCC) green tape with a dielectric constant of 7.8. The measurement results agree well with the HFSS simulation results. The size of the UWB BPF including the BSF is $3{\times}6.3\times0.45\;mm^3$.

A Study on Intrinsic Noise of Capacitively Coupled Active Electrode (용량성 결합 능동 전극의 내부 잡음 분석)

  • Lim, Yong-Gyu
    • Journal of the Institute of Convergence Signal Processing
    • /
    • v.13 no.1
    • /
    • pp.44-49
    • /
    • 2012
  • The indirect-contact ECG measurement is a newly developed method for unconstrained and nonconscious measurement in daily Life. This study is the first step to reducing the large background noise appearing in indirect-contact ECG. This study built the thermal noise model of capacitively coupled active electrode which is used in indirect-contact ECG. The results show that the level of thermal noise estimated by the thermal noise model is much the same as that of actual background noise for the capacitively coupled active electrode alone. By applying the actual electrical properties of a sample cotton cloth to the thermal noise model, the theoretical level of thermal noise in the indirect-contact ECG was estimated. The results also show that the level of op-amp's intrinsic noise is so small that it can be negligible in comparison with thermal noise of resistors. The relationship between the level of thermal noise and the resistance of the bias resistor was derived, and it is the base for the further study how to choice the optimal resistance for the bias resistor.

The Calculation of Two Dimensional Spatial Profile of Electromagnetic Field for Capacitively Coupled Plasma Source (축전 결합형 플라즈마원에 대한 전자기장의 2차원 공간 의존성 계산)

  • Kim, Y.I.;Yoon, N.S.
    • Journal of the Korean Vacuum Society
    • /
    • v.17 no.5
    • /
    • pp.400-407
    • /
    • 2008
  • In this study, Two dimensional spatial profile of electromagnetic field for capacitively coupled plasma source is calculated. Based on one dimensional fluid equation, spatial profile for the axial direction of electric field and conduction current density is firstly calculated. The two dimensional spatial profile for the electromagnetic field is calculated from solution of Maxwell equation that is expanded to power series for ${\omega}r/c$ into the radial direction.

Power Dissipation in a RF Capacitively Coupled Plasma

  • Tran, T.H.;You, S.J.;Kim, J.H.;Seong, D.J.;Jeong, J.R.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.203-203
    • /
    • 2013
  • Low pressure plasmas play a key role in many areas including electronic, aerospace, automotive, biomedical, and toxic waste management industries, and the advantages of the plasma are well known the processing procedure is established. However, the insight behavior of the discharges remains a mystery, even though a simple geometry as capacitive discharges. In this work, we measured RF power dissipation in capacitively coupled plasma (CCP) at various experiment conditions with potential probe and RF current probe. Through the results, we will have a clearer view of the inner nature of the CCP.

  • PDF

2D Kinetic Simulation of Partially Magnetized Capacitively Coupled Plasma Sources (2차원 동역학 시뮬레이션을 활용한 부분적으로 자화된 용량성 결합 플라즈마 전산 모사)

  • Sung Hyun Son;Junbeom Park;Kyoung-Jae Chung
    • Journal of the Semiconductor & Display Technology
    • /
    • v.22 no.1
    • /
    • pp.118-123
    • /
    • 2023
  • Partially magnetized capacitively coupled plasma (CCP) sources are investigated using a two-dimensional kinetic simulation code named EDIPIC-2D. A converging numerical solution was obtained for CCP with a 60 MHz power source, while properly capturing the dynamics of electrons and power absorption over a single RF period. The effects of magnetic fields with different orientations were evaluated. Axial magnetic fields caused changes in the spatial distribution of plasma density, affecting the loss channel. Transverse magnetic fields enhanced stochastic heating near the powered electrode, leading to an increase in plasma density while the significant E×B drift loss compensated for this rise.

  • PDF

Numerical Modeling of Floating Electrodes in a Plasma Processing System

  • Joo, Junghoon
    • Applied Science and Convergence Technology
    • /
    • v.24 no.4
    • /
    • pp.102-110
    • /
    • 2015
  • Fluid model based numerical analysis is done to simulate a plasma processing system with electrodes at floating potential. $V_f$ is a function of electron temperature, electron mass and ion mass. Commercial plasma fluid simulation softwares do not provide options for floating electrode boundary value condition. We developed a user subroutine in CFD-ACE+ and compared four different cases: grounded, dielectric, zero normal electric field and floating electric potential for a 2D-CCP (capacitively coupled plasma) with a ring electrode.