• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.25-29
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• 2021

This paper demonstrates the utility of the Ni-Pd and carbon-nanotube (Ni-Pd-CNT)-based nanoalloy to improve the α-Ga₂O₃ crystal quality using the halide-vapor-phase epitaxy (HVPE) method. As result, the overall thickness of the α-Ga₂O₃ epitaxial layer increased from a Ni electroless plating time of 40 s to 11 ㎛ after growth. In addition, the surface morphologies of the α-Ga₂O₃ epilayers remained flat and crack-free. The full-width half-maximum results of the X-ray diffraction analysis revealed that the ($10{\bar{1}}4$) diffraction patterns decreased with increasing nominal thickness.