• Korean Journal of Materials Research
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• v.30 no.6
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• pp.279-284
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• 2020

In this work, a carbon-doped carbon nitride photocatalyst is successfully synthesized through a simple centrifugal spinning method after heat treatment. The morphology and properties of the prepared photo catalyst are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), UV-vis spectrophotometer (UV-vis), and specific surface area. The results show that the band gap of the prepared sample, g-CN-10 is 2.1 eV, is significantly lower than that of pure carbon nitride, 2.7 eV. As the amount of cotton candy increased, the absorption capacity of the prepared catalyst for visible light is significantly enhanced. In addition, the degradation efficiency of Rhodamine B (RhB) by sample g-CN-10 is 98.8 % over 2 h, which is twice that value of pure carbon nitride. The enhancement of photocatalytic ability is attributed to the increase of specific surface area after the carbon doping modifies carbon nitride. A possible photocatalytic degradation mechanism of carbon-doped carbon nitride is also suggested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1103-1109
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• 2003

Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.3
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.352-362
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• 2012

This paper explores the use of a variety of carbon nanoparticles to impart electrical, thermal conductivity, good frictional properties to silicon nitride matrices. We used the highly promising types of carbon as carbon nanotubes, exfoliated graphene and carbon black nanograins. A high-efficiency attritor mill has also been used for proper dispersion of second phases in the matrix. The sintered silicon nitride composites retained the mechanical robustness of the original systems. Bending strength as high as 700 MPa was maintained and an electrical conductivity of 10 S/m was achieved in the case of 3 wt% multiwall carbon nanotube addition. Electrically conductive silicon nitride ceramics were realized by using carbon nanophases. Examples of these systems, methods of fabrication, electrical percolation, mechanical, thermal and tribological properties are discussed.

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.1-6
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• 2001

A simulation method is proposed to study the amorphous structure of carbon nitride. The material properties of a non-uniform nitrogen distribution in an amorphous CN matrix can be studied. The cohesive energy of a group of randomly generated atoms can be minimized to find the relative positions of atoms. From the calculated configuration of atoms, many properties of amorphous carbon nitride can be calculated such as bulk modulus, P-V curve, sp$^3$/sp$^2$ ratio of carbon, and vibrational spectra. The calculation shows that the cohesive energy of non-uniform nitrogen distribution is lower than that of a uniform distribution. This may suggest that the regular structure of carbon nitride can at most be metastable. It is not easy to incorporate nitrogen atoms into a carbon matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.147-152
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• 2002

Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.363-370
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• 1996

Carbon nitride is one of the new carbon materials which show interesting properties. After the theoretical calculation by LIu and Cohen, many researchers are trying to prepare $\beta$-$C_3N_4$ which may be harder than diamond. Many carbon nitride films synthesized till now by various methods are amorphous and the N/C ratios in the films are usually below 0.5. First we review shortly the synthesis of carbon nitride thin films by plasma, ion and laser processing. Second we report on the preparation of amorphous carbon nitride thin films by shielded arc ion plating and the structural and mechanical properties of the films.