• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2421-2424
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• 2018

A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.876-879
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• 1996

The effect of oxygen vacancy and Sn donor on carrier density for Indium Tin oxide (ITO) and Indium oxide (InO) films has been investigated. Hot-cathode Penning discharge sputtering (HC-PDS) in the mixed gasses of argon and oxygen was applied to fabricate the ITO and InO films. Density of oxygen vacancy was estimated using a high-energy ion beam technique. The electrical properties of the films such as resistivity, carrier density and mobility were estimated by Van der Pauw method. The doping efficiency of oxygen vacancy could be obtained from the relationship between oxygen vacancy and carrier density. The doping efficiency of oxygen vacancy for ITO films resulted in a quite small value. Comparing the doping efficiencies of ITO and InO films, the effect of Sn donor on carrier density was also discussed.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• Journal of the Korean Chemical Society
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• v.30 no.3
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• pp.327-332
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• 1986

Spatial (radial and height) distribution of electron number density is measured for an inductively coupled plasma under five operating conditions: (1) no carrier gas, (2) carrier gas without aerosel, (3) carrier gas with aerosol, (4) carrier gas with desolvated aerosol, and (5) carrier gas with aerosol and excess lithium. A complete RF power mapping of electron density is obtained. The plasma electrons for a typical analytical torch are observed to be hollow at the radial center in the region close to the induction coil, but diffuse rapidly toward the center in the higher region of the plasma. The presence of excess Li makes no significant change in the electron density profiles. The increases in the RF power levels increase the values of electron density uniformly across the radial coordinate.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.37-42
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• 1998

The barrier heights and carrier densities of ZnO varistors with various compositions were estimated using C-V, J-V and $\rho$-T relations. The barrier heights obtained from C-V and J-V plots were 0.73~5.98 eV and 0.25~2.70 eV, respectively. The carrier densities estimated from C-V plots were ~$10^{18}cm^{-3}$. Acceptable values of the barrier heights and the carrier densities were obtained from $\rho$-1/T curves and the capacitances at zero bias; 0.6~0.8 eV for the barrier heights and ~$10^{17}cm^{-3}$ for carrier densities. Addition of cobalt increased the barrier height and the carrier density, while chromium slightly lowered both of them.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• The Journal of Korean Academy of Prosthodontics
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• v.24 no.1
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• pp.91-103
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• 1986

Using imprint cultures and epithelial smears, the density and prevalence of colonization of oral mucosal sites and denture surfaces by Candida albicans has been determined in 28 healthy dentate subjects and 20 denture wearers. With questionnaire, oral and denture examination, the relationship between the carrier rates and several factors; DMFT, oral hygiene index, salivary pH & denture plaque score were studied. But these factors have not significant relationship to the carrier rates. Imprint culture appears to be sensitive technique for detecting candidal carriers and be useful for distinguishing between the healthy carrier state and candidal infection. Cigarette smokers had a significantly increased carrier state (P<0.05) compared with nonsmoker in male dentate subjects. Female were more frequent carriers than male in dentate and denture group, but these differences were not significant. In denture wearers, there was a higher density and frequency of candidal colonization of all mucosal sites sampled, compared with that of healthy dentate group especially anterior palate and posterior palate showed highly significant differences in frequency of candidal colonization (P<0.05). The distribution of Candida albicans is not uniform throughout the mouth. The tongue in the healthy dentate subjects and the impression surfaces of upper dentures are the primary oral reservoirs for the fungus. Overnight wearing of dentures was associated with increased density and frequency of candidal colonization and density.

• Coupled systems mechanics
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• v.11 no.5
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• pp.459-483
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• 2022

In the present work, a new photothermoelastic model based on Moore-Gibson-Thompson theory has been constructed. The governing equationsfor orthotropic photothermoelastic plate are simplified for two-dimension model. Laplace and Fourier transforms are employed after converting the system of equations into dimensionless form. The problem is examined due to various specified sources. Moving normal force, ramp type thermal source and carrier density periodic loading are taken to explore the application of the assumed model. Various field quantities like displacements, stresses, temperature distribution and carrier density distribution are obtained in the transformed domain. The problem is validated by numerical computation for a given material and numerical obtained results are depicted in form of graphs to show the impact of varioustheories of thermoelasticity along with impact of moving velocity, ramp type and periodic loading parameters. Some special cases are also explored. The results obtained in this paper can be used to design various semiconductor elements during the coupled thermal, plasma and elastic wave and otherfieldsin thematerialscience, physical engineering.

• ETRI Journal
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• v.27 no.3
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• Journal of Korea Multimedia Society
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• v.9 no.6
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• pp.728-734
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• 2006

Carrier interferometry code is considered as a promising scheme that provides significant performance improvement via frequency diversity effect. Space-time coding is commonly employed to achieve a performance gain through space diversity. The combination of these techniques and forward error correction coding will lead to enhanced system capacity and performance. This paper presents a low-density parity check (LDPC) coded space-time orthogonal frequency division multiplexing (OFDM) transmission scheme with carrier interferometry code for high-capacity and high-performance mobile multimedia communications. Computer simulations demonstrate that the proposed mobile multimedia transmission system offers a considerable performance improvement of approximately 9dB in terms of Eb/No in the Rayleigh fading channel with relatively low delay spread, in comparison with space-time OFDM. Performance gains are further increased, comparing with traditional OFDM systems.