• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.59-60
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• 2006

The slurry stability and removal rate during recycling of slurry in silicon wafer polishing was studied. Average abrasive size of slurry was not changed with recycling time, however, large particles appeared as recycling time increased. Large particles were related foreign substances from pad or abraded silicon flakes during polishing. The removal rate as well as pH of slurry was decreased as recycling time increased. It suggests that the consumption of OH ions during recycling is the main cause of decrease of removal rate. Therefore, it is important to control pH of slurry to obtain optimum removal rate during polishing.

• Journal of the Korea Construction Safety Engineering Association
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• s.41
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• pp.80-87
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• 2007

The purpose of this paper is to investigate the removal efficiency of fine dusts as the configuration condition of machinery and equipments in Clean Room and to analyze the flowing behaviors of fine dusts as the layout of Clean Room. The layout of the Clean Room was classified into side layout type, 2 center line type and center concentration type layout, and the flow rates used in this research were 0.22m/s, 0.44m/s and0.80m/s. Dust removal efficiency as layout change was decreased 37% for side layout type, 31% for 2 centerline type and 20% for center concentration type layout at the flow rate of 0.22m/s, compared with the state without machinery and equipments in Clean Room. The efficiency was decreased 42% for side layout type,22% for 2 center line type and 8% for center concentration type layout at the flow rate of 0.44m/s, and decreased 20% for side layout type, 18% for 2 center line type and 10% for center concentration type layout at the flow rate of 0.80m/s. According to the result of dust removal behavior, $0.3\mum$, $1\mum$and $3\mum$dust except for $5\mum$showed the higher change of the behavior in side layout type than in center concentration type layout due to the change of air flow. It was confirmed that removal behavior depends on the layout of machinery and equipments as the dust size decreases.

• Journal of Korean Society of Water and Wastewater
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• v.27 no.1
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• pp.69-76
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• 2013

Specific growth rate and removal rate of nitrogen and phosphorus of Chlorella sorokiniana, Chlorella vulgaris, Senedesmus dimorphus those are able to metabolite mixotrophically and have high nitrogen and phosphorus removal capacity were examined. Based on the results, one microalgae was selected and conducted experiments to identify the operating factors such as pH and aeration rate. The specific growth rate and phosphorus removal rate of C. sorokiniana significantly presented as $0.29day^{-1}$ and 1.65 mg-P/L/day, while the nitrogen removal rate was high as 12.7 mg-N/L with C. vulgaris. C. sorokiniana was chosen for appropriate microalgae to applying for wastewater treatment system and was cultured in pH ranged 3 to 11. High specific growth rate and removal rate of nitrogen and phosphorus were shown at pH 7 as $0.71day^{-1}$, 7.61 mg-N/L/day, and 1.24 mg-P/L/day, respectively. The specific growth rate examined with aeration rate between 0 and 2 vvm (vol/vol-min) highly presented as $1.2day^{-1}$ with 1.5 ~ 2 vvm, while the nitrogen removal rate was elevated with 0.5 vvm as 9.43 mg-N/L/day.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.167-172
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• 2006

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.98-102
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• 2007

The stability of slurry and removal rate during recycling of colloidal silica slurry was evaluated in silicon wafer polishing. The particle size distribution, pH, and zeta potential were measured to investigate the stability of colloidal silica. Large particles appeared as recycling time increased while average size of slurry did not change. Large particles were identified by EDS(energy dispersive spectrometer) as foreign substances from pad or abraded silicon flakes during polishing. As the recycling time increased, pH of slurry decreased and removal rate of silicon reduced but zeta potential decreased inversely. Hence, it could be mentioned that decrease of removal rate is related to consumption of $OH^-$ ions during recycling. Attention should be given to the control of pH of slurry during polishing.

• ALGAE
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• v.33 no.4
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• pp.319-327
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• 2018

Ettlia sp. YC001, a highly settleable and productive microalga, was shown to be effective in removing nutrients and capturing suspended solids from eutrophic pond water. The optimum conditions for the Ettlia sp. YC001 cultivation were investigated using water from a landscape pond. The pond water was supplemented with different N : P ratios by weight, and the biomass production and nutrient removal compared in batch cultures. The maximum removal rate of N and P was with an N : P ratio of 16 : 1. Plus, the turbidity dropped to near zero within 4 days. Meanwhile, chemostat cultivation showed that the biomass productivity and nutrient removal rate increased when increasing the dilution rate, where a dilution rate of $0.9d^{-1}$ showed the highest N and P removal rate at $32.4mg\;L^{-1}\;d^{-1}$ and $1.83mg\;L^{-1}\;d^{-1}$, respectively, and highest biomass and lipid productivity at $0.432g\;L^{-1}\;d^{-1}$ and $67.8mg\;L^{-1}\;d^{-1}$, respectively. The turbidity was also reduced by 98% in the chemostat cultivation. Moreover, auto-flocculation and pH were closely connected to the turbidity removal. As a result, this study identified the optimal N : P ratio for small pond water treatment using an Ettlia sp. YC001, while also establishing the optimal conditions for nutrient removal, turbidity reduction, and biomass production.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.118-118
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• 2008

The oxide CMP has been applied to interlayer dielectric(ILD) and shallow trench isolation (STI) in chip fabrication. Recently the slurry used in oxide CMP being changed from silica slurry to ceria (cerium dioxide) slurry particularly in STI CMP, because the material selectivity of ceria slurry is better than material selectivity of silica slurry. Moreover, the ceria slurry has good a planarization efficiency, compared with silica slurry. However ceria abrasives make a material removal rate too high at the region of wafer center. Then we focuses on why profile of material removal rate is convex. The material removal rate sharply increased to 3216 $\AA$/min by $4^{th}$ run without conditioning. After $4^{th}$ run, material removal rate converged. Furthermore, profile became more convex during 12 run. And average material removal rate decreased when conditioning process is added to end of CMP process. This is due to polishing mechanism of ceria. Then the ceria abrasive remains at the pad, in particular remains more at wafer center contacted region of pad. The field emission scanning electron microscopy (FE-SEM) images showed that the pad sample in the wafer center region has a more ceria abrasive than in wafer outer region. The energy dispersive X-ray spectrometer (EDX) verified the result that ceria abrasive is deposited and more at the region of wafer center. Therefore, this result may be expected as ceria abrasives on pad surface causing the convex profile of material removal rate.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.439-440
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• 2002

Nano-Crystalline $CeO_2$ particles were dispersed in deionized water with controlled slurry chemicals for CMP test. According to the CMP test, the removal rate of $SiO_2$ layer was mainly controlled by the size and crystallinity of $CeO_2$ particles which can be controlled by the heat-treatment condition during $CeO_2$ synthesis. In contrast, the removal rate of $Si_3N_4$ layer was significantly influenced by the passivation reagent which protects the $Si_3N_4$ surface layer from excessive dissolution during CMP.

• Journal of the Korean Society of Safety
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• v.21 no.5 s.77
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• pp.46-52
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• 2006

The purpose of this paper is to investigate the removal efficiency of fine dusts as the configuration condition of machinery and equipments in Clean Room and to analyze the flowing behaviors of fine dusts as the layout of Clean Room. The layout of the Clean Room was classified into side layout type, 2 center line type and center concentration type layout, and the flow rates used in this research were 0.22m/s, 0.44m/s and 0.80m/s. Dust removal efficiency as layout change was decreased 37% for side layout type, 31% for 2 center line type and 20% for center concentration type layout at the flow rate of 0.22m/s, compared with the state without machinery and equipments in Clean Room. The efficiency was decreased 42% for side layout type, 22% for 2 center line type and 8% for center concentration type layout at the flow rate of 0.44m/s, and decreased 20% for side layout type, 18% for 2 center line type and 10% for center concentration type layout at the flow rate of 0.80m/s. According to the result of dust removal behavior, $0.3{\mu}m,\;1{\mu}m\;and\;3{\mu}m$ dust except for $5{\mu}m$ showed the higher change of the behavior in side layout type than in center concentration type layout due to the change of air flow. It was confirmed that removal behavior depends on the layout of machinery and equipments as the dust size decreases.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.2
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• pp.39-43
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• 2008

Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.