• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.344-345
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• 2012

The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the reverse-biased channel-to-drain p-n junction. A BTBT model is used to fit the measured GIDL currents under different channel-doping levels. Good agreement is obtained between the modeled results and experimental data. The increase of the GIDL current at narrower widths in mainly caused by the stronger gate field at the edge of the shallow trench isolation (STI). As channel width decreases, a larger portion of the GIDL current is generated at the channel-isolation edge. Therefore, the stronger gate field at the channel-isolation edge causes the total unit-width GIDL current to increases for narrow-width devices.

• Journal of Korea Water Resources Association
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• v.49 no.7
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• pp.635-644
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• 2016

This study investigates variation of flow characteristics due to variation of branch channel width and discharge ratio at bifurcation channel using 2D numerical model. The calculated result considering secondary flow is more accurate and stable than without considering one. The diversion flow rate ($Q_3/Q_1$) is reduced by flow stagnation effect according to the interaction of the secondary flow and flow separation zone in branch channel. The less upstream inflow or the lower upstream velocity, the bigger variation of diversion flow rate by changing branch channel width. At uniform downstream boundary condition, the rate of change in Froude number of downstream of main channel($Fr_2$)-diversion flow rate ($Q_3/Q_1$) relations is similar about -2.4843~-2.6675 when branch channel width ratio (b/B) is decreased. At uniform diversion flow rate ($Q_3/Q_1$) condition, the width of recirculation zone in branch channel is decreased when branch channel width ratio (b/B) is decreased. The less upstream inflow in the case of increasing branch channel width or the narrower branch channel width in the case of increasing upstream inflow, the bigger reduction ratio of recirculation zone width. At uniform inflow discharge ($Q_1$) condition, diversion flow rate, the width and length of recirculation zone in branch channel are decreased when branch channel width ratio (b/B) is decreased.

• Journal of Korea Water Resources Association
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• v.51 no.4
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• pp.313-322
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• 2018

The height of the steps was almost the same as the grain size of bed materials and increased with channel slope. The step widths and step wavelengths are almost the same size, and the step wavelength was decreased when the channel slope was increased. It was analyzed that there was a clear correlation between channel width and step width, and the step width increases with channel width. In addition, the step wavelength was scaled by channel width, and the step height is governed by the grain size of the rock forming the step, so that the profile structure of the step-pool was changed according to the channel slope. the scale of the pool was found to be highly correlated with the channel width, grain size, and slope gradient. Therefore, the characteristics of step-pool structure in mountain streams were influenced by various factors, but it can be explained as the grain size, channel width and channel slope.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.638-643
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• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• Journal of IKEEE
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• v.17 no.1
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• pp.71-76
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• 2013

AlGaN/GaN HEMTs (High electron mobility transistors) with narrow channel were fabricated and the effect of channel scaling on the device were investigated. The devices were fabricated using e-beam lithography to have same channel length of $1{\mu}m$ and various channel width from 0.5 to $9{\mu}m$. The sheet resistance of the channel was increased corresponding to the decrease of channel width and the increase was larger at the width of sub-${\mu}m$. The threshold voltage of the HEMT with $1.6{\mu}m$ and $9{\mu}m$ channel width was -2.85 V. The transistor showed a variation of 50 mV at the width of $0.9{\mu}m$ and the variation 350 mV at $0.5{\mu}m$. The transconductance of 250 mS/mm was decreased to 150 mS/mm corresponding to the decrease of channel width. Also, the gate leakage current of the HEMT decreased with channel width. But the degree of was reduced at the width of sub-${\mu}m$. It was thought that the variation of the electrical characteristics of the HEMT corresponding to the channel width came from the reduced Piezoelectric field of the AlGaN/GaN structure by the strain relief.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.6_1
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• pp.683-691
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• 2021

Bipolar plates with channel width of 0.5 mm, 0.4 mm, and 0.3 mm respectively were printed using a 3D printer. The shape of three b ipolar plates was rectangular, the channel depth was 0.5 mm, and the thickness of base was 0.5 mm. The bipolar plate with channel width of 0.5 mm had 45 channels, and their active area was 44.5 mm × 50 mm. The bipolar plate with channel width of 0.4 mm had 57 channels and its active area was 45.2 mm × 50 mm, and the bipolar plate with channel width of 0.3 mm had 75 channels and its active area was 44.7 mm × 50 mm. The bipolar plates were printed using PLA filament. The cross-sectional lengths of the bipolar plates with channel widths of 0.5 mm and 0.4 mm were identical by 96% of the designed cross-sectional length. Whereas the bipolar plate with a channel length of 0.3 mm had a large difference of 25% from the designed cross-sectional length.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.27 no.4
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• pp.133-140
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• 2004

This study deals with human reaction speed according to human physical conditions (body size) such as head width, thickness, breast width, arm extent, and age. Especially, the results of this study are compared between young and old generation. According to this study, the thickness and extent factor do not have any correlation with human reaction speed, but width factors(head width, breast width, etc) have some correlation with human reaction speed. The result of this study can be used to find fitter person for a special job such as emergency condition job, sports man (because you can find a person having a good talent for it without test). Also, the purpose of this study is to find CNT (Channel Noise Time). The word of CNT is to explain the relation between Channel Noise and working speed. (Channel Noise is a kind of noise happening between the human information transmission channel.)

• Journal of The Korean Society of Agricultural Engineers
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• v.61 no.4
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• pp.33-42
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• 2019

In this study, the channel and floodplain widths are indirectly measured for three different watersheds using satellite images to reflect the shape of Korean channels in the Soil and Water Assessment Tool (SWAT) model. For measuring the channel and floodplain widths, multiple satellite images were referred to ensure the widest width of certain points. In the single channel, the widths at the multiple points were measured. Based on the measured data, the regression equations were derived to estimate the channel and floodplain widths according to watershed areas. Applying these developed equations, this study evaluated the effect of the change of channel and floodplain widths on the SWAT simulation by comparing to the measured streamflow data. The developed equations estimated larger channel width and smaller floodplain compared with those calculated in the current SWAT model. As shown in the results, there was no considerable changes in the predicted streamflow using the current and developed equations. However, the flow velocity and channel depth calculated from the developed equations were smaller than those of the current equations. The differences were caused by the effect of different channel geometries used for calculating the hydraulic characteristics. The channel geometries also affected the water quality simulation in channels because the hydraulic characteristics calculated by the channel geometries are directly related to the water quality simulation. Therefore, application of the river cross-sectional regression equation reflecting the domestic stream shape is necessary for accurate water quantity / quality and water ecosystem simulation using hydrological model.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.7
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• pp.853-858
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• 2003

The suitable estimation of the filter width in the dynamic eddy viscosity model were investigated in high Reynolds number channel flow. In this study, the improvement on matters by optimizing the test filter shape was attempted through the numerical experiment. The way that select optimum test filter width is recommended. Some test filters, one is based on a discrete representation of the top-hat filter and another are based on a high-order filtering operation, are evaluated in simulations of the turbulent channel flow at Reynolds number 1020, based on friction velocity and channel half width. It appears that the estimation of test filter width practically can decrease the dissipative nature of dynamic eddy viscosity model with explicit test filter. It shows that the value of the filter width ratio used in the dynamic procedure must match the properties of the test filter actually used in the calculation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.889-893
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• 2015

In this work, the characteristics of GIDL current in nanowire GAA MOSFET with different channel width and hot carrier stress. When the gate length is fixed as a 250nm the GIDL current with different channel width of 10nm, 50nm, 80nm, and 130nm have been measured and analyzed. From the measurement, the GIDL is increased as the channel width decreaes. However, the derive current is increased as the channel width increases. From measurement results after hot carrier stress, the variation of GIDL current is increased with decreasing channel width. Finally, the reasons for the increase of GIDL current with decreasing channel width and r device. according to hot carrier stress GIDL's variation shows big change when width and the increase of GIDL current after hot carrier stress are confirmed through the device simulation.