• Title/Summary/Keyword: Circuit Parameter

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The defect detection circuit of an electronic circuit through impedance change detection that induces a change in S-parameter (S-parameter의 변화를 유도하는 임피던스 변화 감지를 통한 전자회로의 결함검출회로)

  • Seo, Donghwan;Kang, Tae-yeob;Yoo, Jinho;Min, Joonki;Park, Changkun
    • Journal of IKEEE
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    • v.25 no.4
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    • pp.689-696
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    • 2021
  • In this paper, in order to apply Prognostics and Health Management(PHM) to an electronic system or circuit, a circuit capable of detecting and predicting defect characteristics inside the system or circuit is implemented, and the results are described. In the previous study, we demonstrated that the frequency of the amplitude of S-parameter changed as the circuit defect progressed. These characteristics were measured by network analyser. but in this study, even if the same defect detection method is used, a circuit is proposed to check the progress of the defect, the remaining time, and the occurrence of the defect without large measurement devices. The circuit is designed to detect the change in impedance that generates changes of S-parameter, and it is verified through simulation using the measurement results of Bond-wires.

Parameter Optimization using Eevolutionary Programming in Voltage Reference Circuit Design (진화 연산을 이용한 기준 전압 회로의 파라미터 최적화)

  • 남동경;박래정;서윤덕;박철훈;김범섭
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.34C no.8
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    • pp.64-70
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    • 1997
  • This paper presents a parameter optimization method using evolutionary programming in voltage reference circuit because the designer must select appropriate parameter values of the circuit taking into consideration both powr voltage and temperature variation. In this paper, evolutionary programming is suggested as an approach for finding good parameters with which the reference voltage variation is small with respect to temperature variation. Simulation results. Simulation results show that this method is effective in circuit design.

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Analysis and optimization of Wiel-Dobke synthetic testing circuit parameters (Weil-Dobke 합성단락 시험회로의 Parameter 분석과 최적화)

  • Kim, Maeng-Hyun;Rhyou, Hyeong-Kee;Park, Jong-Wha;Koh, Hee-Seog
    • Proceedings of the KIEE Conference
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    • 1995.07b
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    • pp.623-627
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    • 1995
  • This paper describes analysis and optimization of Weil-Dobke synthetic testing circuit parameters, which is efficient and economical test method in high capacity AC circuit breaker. In this paper, analysis of synthetic short-circuit test circuit parameter proposed nondimensional factor that is reciprocal comparison value of circuit parameter and is not related to rated of circuit breaker, in particular, this study induce minimization of required energy of critical TRV generation specified in IEC 56 standards and present optimal design of synthetic short circuit testing facilities.

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Proposed Equivalent Circuit and Parameter Identification Method for Electro-Magnetic Resonance Based Wireless Power Transfer

  • Kawamura, Atsuo;Kim, Tae-Woong
    • Journal of Electrical Engineering and Technology
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    • v.8 no.4
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    • pp.799-807
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    • 2013
  • The proper equivalent circuit is newly presented for electro-magnetic resonance based wireless power transfer. Based on the proposed equivalent circuit of open-ended helical antennas, the parameter identification of helical antennas can be well derived for highly efficient wireless power transfer. The well-established equivalent circuit in high frequency ranges is developed for analyzing a resonance enhanced-electromagnetic coupling helical antennas and the unknown parameters for helical antennas are identified by experiments. The effectiveness based on the proposed equivalent circuit is verified through experiments.

The Study of Circuit Model Parameter Generation Using Device Simulation (소자 시뮬레이션을 이용한 Circuit Model Parameter 생성에 대한 연구)

  • 이흥주
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.4 no.3
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    • pp.177-182
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    • 2003
  • In the case of the flash memory, various kinds of transistors and the wide range of operation voltage are necessary to achieve the read/write operations. Therefore, the characteristics of transistors are measured in the silicon for the circuit design, and the test vehicle run must be processed. In this study, an efficient design flow is suggested using TCAD tools. The test vehicle is replaced with well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for flash memory device. The calibration errors are less than 5% of a full chip operation, which is accepted by the designers. The results of the calibration were used to predict I-V curves and model parameter of the various transistors for the design of flash device.

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The CMOS RF model parameter for high frequency communication circuit design (고주파통신회로 설계를 위한 CMOS RF 모델 파라미터)

  • 여지환
    • Journal of Korea Society of Industrial Information Systems
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    • v.6 no.3
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    • pp.123-127
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    • 2001
  • The prediction method of the parameter C/sub gs/ of CMOS transistor is proposed by calculating the mobil charge in inversion layer of COMS transistor. This parameter C/sub gs/ decided on the cutoff frequency in MOS transistor in RF range and coupled input and output. This parameter C/sub gs/ in RF range is very important parameter in small signal circuit model. This proposed method is contributed to developing software of extracting parameter value in equivalent circuit model. The method provide the important information to construct a RF nonlinear model for multifinger gate MOSFET. This method will be very valuable to develop a large signal MOSFET model for nonlinear RF IC design.

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A Study on the Built-In Self-Test for AC Parameter Testing of SDRAM using Image Graphic Controller

  • Park, Sang-Bong;Park, Nho-Kyung;Kim, Sang-Hun
    • The Journal of the Acoustical Society of Korea
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    • v.20 no.1E
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    • pp.14-19
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    • 2001
  • We have proposed BIST method and circuit for embedded 16M SDRAM with logic. It can test the AC parameter of embedded 16M SDRAM using the BIST circuit capable of detecting the address of a fail cell installed in an Merged Memory with Logic(MML). It generates the information of repair for redundancy circuit. The function and AC parameter of the embedded memory can also be tested using the proposed BIST method. It is possible to test the embedded SDRAM without external test pin. The total gate of the BIST circuit is approximately 4,500 in the case of synthesizing by 0.25μm cell library and is verified by Verilog simulation. The test time of each one AC parameter is about 200ms using 2Y-March 14n algorithm.

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AVR Parameter tuning with On-line System model using Parameter optimization technique (On-line 시스템 모델과 파라메터 최적화 기법을 이용한 AVR의 최적 파라메터 튜닝)

  • Kim, Jung-Mun;Moon, Seung-Ill
    • Proceedings of the KIEE Conference
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    • 1999.07c
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    • pp.1242-1244
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    • 1999
  • AVR parameter tuning for voltage control of power system generators has generally been done with the open-circuit model of the synchronous generator. When the generator is connected on-line and operating at rated load conditions, the AVR operates in an entirely different environment from the open-circuit conditions. This paper describes a new method for AVR parameter tuning using optimization technique with on-line linearized system model. As this method considers not only the on-line models but also the off-line open-circuit models, AVR parameters tuned by this method can give the sufficiently stable performance at the open-circuit commissioning phase and give the desired performance at the operating conditions. Also this method estimates the optimum parameters for desired performance indices that are chosen for satisfying requirements in some practical applications, the performance of the AVR can satisfy the various requirements.

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A Study on the Equivalent Circuit and Parameter Estimation of I.M for Steady state. (정상상태시 유도전동기의 등가회로 및 정수산정에 관한 연구)

  • Baek, Soo-Hyun;Kim, Yong
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.80-82
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    • 1988
  • This paper proposed a new equivalent circuit and parameter estimation for I.M, which is different from T type and L type equivalent circuits. By using this circuit, we can analyze the torque of I.M, such as seperately exited D.C Motor, further more, we think that this equivalent circuit is effective to the vector control system for I.M.

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A Circuit Extractor Using the Quad Tree Structure (Quad Tree 구조를 이용한 회로 추출기)

  • 이건배;정정화
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.1
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    • pp.101-107
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    • 1988
  • This paper proposes a circuit extractor which extracts a netlist from the CIF input file cntaining the layout mask artwork informations. The circuit extractor extracts transistors and their interconnections, and calculates circuit parameter such as parasitic resistance and parasitic capacitance from the mask informations. When calculating the parasitic resistance, we consider the current flow path to reduce the errors caused by the resistance approximation. Similarly, we consider the coupling capacitance which has an effect on the circuit characteristics, when the parasitic capacitances are calculated. Therefore, using these parameter values as an input to circuit simulation, the circuit characteristics such as delay time can be estimated accurately. The presented circuit extraction algorithm uses a multiple storage quad tree as a data sturucture for storing and searching the 2-dimensional geometric data of mask artwork. Also, the proposed algorithm is technologically independent to work across a wide range of MOS technologies without any change in the algorihm.

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