• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.71-78
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• 2011

In this paper, we describe the design and implementation of a high efficiency and broad-band Class-J mode power amplifier using gallium nitride(GaN) high-electron mobility transistor(HEMT). The matching circuit of proposed class-J mode power amplifier for 2nd harmonic impedance designed to provide pure reactance alone. The measurement results show that output power of $40{\pm}1$ dBm, power-added efficiency of 50%, and drain efficiency of 60% for a continuous wave signal at 1.4 to 2.6 GHz.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.1
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• pp.13-20
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• 2015

Existing LDMOS power amplifier that used class-AB and doherty system shows 55% of efficiency in 60MHz narrow band. Because RRH has been applied to power amplifier at base station. It is required that over 100MHz expanded band and more than 60% high efficiency power amplifier. In this paper we designed class-J power amplifier using LDMOS FET which has over 60% high efficiency characteristic in 200MHz. The output matching circuit of designed class-J power amplifier has been optimized to contain pure reactance at second harmonic load and has low quality factor Q. As a measurement result of the amplifier, when we input continuous wave signal, we checked 62~70% of power added efficiency(PAE) in 2.06~2.2GHz including WCDMA frequency as a 10W class-J power amplifier.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.11
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• pp.48-53
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• 2012

In this paper designed J-class amplifier that have high efficiency using parasitic of pHEMT. Measured results of the designed J-class amplifier is maxmum output power of 31.5dBm and gain of 16.5dB, minimum output power of 29.8dBm. when input power 15dBm. Maxmum drain efficiency is 76.2% at 2.95GHz, maxmum drain efficiency is 61%. The J-class amplifier has average gain of 15.35dB and average efficiency of 35%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.276-282
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• 2015

Until recently, power amplifiers using LDMOS were Class-AB and Doherty type, and showed 55 % efficiency for narrowband of 60 MHz bandwidth. However, owing to the RRH application of base stations power amplifier module, a bandwidth expansion of at least 100 MHz and high efficiency power amplifiers of at least 60 % power efficiency are required. In this study, a Class-J power amplifier was designed by optimizing an output matching circuit so that the second harmonic load will contain a pure reactance element only and have broadband characteristics by using GaN HEMT. The measurements showed that a 45 W Class-J power amplifier with a power added efficiency of 60~75 % was achieved when continuous wave signals were input at 1.6~2.3 GHz, including W-CDMA application.

• Journal of Advanced Navigation Technology
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• v.27 no.6
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• pp.849-854
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• 2023

In this paper, a high-efficiency power amplifier was designed by applying the operating point Class J using LDMOS(laterally diffused metal oxide semiconductor) and optimizing the output matching circuit so that the second harmonic impedance becomes the reactance impedance. The designed power amplifier has a frequency of 108 ~ 110 MHz, Characteristics of PAE(power added efficiency) is 71.5% at P_SAT output (54.5 dBm), 55.5% at P_1dB output (51.5 dBm), and 24.38% at 45 dBm. The CSB(carrier with sideband) amplifier, which is the reference signal in the spatial modulation method, has an operating output of 45 dBm ~ 35 dBm, and linear SDM(sum in the depth of modulation) characteristics(40% ± 0.3%) were obtained. We measure the characteristics in amplitude modulation according to the bias operating point of the power amplifier for CSB and propose the optimal operating point to obtain linear modulation characteristics.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.2
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• pp.105-112
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• 2017

In order to satisfy the diffusion of multimedia service in mobile communication and the demand for high-speed communication, it is essential to modify and improve high efficiency, wideband and nonlinear characteristic of multiband power amplifier. This research is designed to implement a single-stub matching circuit as a 2nd harmonic one that meets conditions of the Class-J power amplifier. Low characteristic impedance of the single-stub line is necessary to suit conditions of wideband Class-J. This research uses ceramic substrates having high permittivity to implement the single-stub line with low characteristic impedance, which eventually results in an amplifier satisfying the output impedance terms of Class-J in wideband frequency range. This result attributes to use of GaN HEMT packaged with a 2nd harmonic matching circuit and external fundamental circuit. The measurement results of the Class-J amplifier confirms the following characteristics: more than output power of 50 W(47 dBm) in bandwidth of 1.8~2.7 GHz(0.9GHz), maximum drain efficiency of 72.6 %, and maximum PAE characteristic of 66.5 %.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.8
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• pp.945-952
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• 2015

Power amplification device which is matched to $50{\Omega}$ in order to achieve a high efficiency of a power amplifier using a GaN power amplification device, since there is a limit of application frequency bands, output power, efficiency characteristics selection, in this study based on the measurement data through the source/load-pull test, high output power and to extract quantitative input and output impedance that matches the design objectives of high output power, high efficiency, an implementation of the high efficiency power amplifier. Implemented power amplifier is shows 25watt(44dBm), PAE of 66-76% characteristics in the frequency band of 2.7-3.1 GHz.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.79-81
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• 2007

본 논문에서는 소나용 고출력 전력증폭기의 효율을 향상시키기 위하여 Class E 설계 기법을 분석하고 소나 시스템의 송신기에 적용하였다. Class E 기법에 기반하여 전력소자를 스위칭 모드로 동작시켜서 Zero Voltage Switching(ZVS)이 발생하도록 회로를 설계함으로써 전력 소자의 전력 손실을 최소화하고 전력 증폭기의 효율을 최대화하여 주었다. 설계된 Class E 기법의 전력 증폭기의 동작 및 타당성을 시뮬레이션을 통하여 검증하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.135-139
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• 2001

Contour vibration mode piezoelectric transformers were designed and fabricated to the square plate with size of $27.5{\times}27.5{\times}2.5(2.6,\;3.0)mm^3$ using PNW-PMN-PZT ceramics. Electrical characteristics of the piezoelectric transformer were investigated for fluorescent lamp ballast application. The electrical properties and characteristic temperature rise were measured using oscilloscope and infrared temperature sensor. A 28W fluorescent lamp was successfully driven by the fabricated transformers. After driving the lamp using Power Amplifier for 24 min, the output power, efficiency and characteristic temperature rise of PT2 piezoelectric transformer showed the appropriate values of 28.01 W, 99.43% and $11^{\circ}C$, respectively. The electronic ballast using PT2 piezoelectric transformer showed an excellent output power of 28.85 W and efficiency of 86.3%, respetively.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.260-263
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• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.