• 제목/요약/키워드: Co-based amorphous

검색결과 145건 처리시간 0.038초

Soft-magnetic Characteristics of Co-based Amorphous Powder Produced by Spinning Water Atomization Process (SWAP)

  • Otsuka, I.;Wada, K.;Watanabe, A.;Kadomura, T.;Yagi, M.
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.784-785
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    • 2006
  • Co-based amorphous powder was produced by a new atomization process "Spinning Water Atomization Process (SWAP)", having rapid super-cooling rate. The composition of the alloys was ($(Co_{0.95}Fe_{0.05})_{1-x}Cr_x$)$_{75}Si_{15}B_{10}$ (x=0, 0.025, 0.05, 0.075). The powders became the amorphous state even if particle size was up to about $500{\mu}m$. The coercive force of powders was about 0.35 - 0.7 Oe. Furthermore, Co-based amorphous powder cores with glass binders were made by cold-pressing and sintering methods. The initial permeability of the core in the frequency range up to 100 kHz was about 110, and the core loss at 100 kHz for Bm = 0.1 T was $350kW/m^3$.

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무전해 코발트계 석출막에 미치는 기판의 영향 (Effect of Substrate on Electroless Co-Base Deposited Films)

  • 한창석;천창환;한승오
    • 한국재료학회지
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    • 제19권6호
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    • pp.319-324
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    • 2009
  • The deposition behavior and structural and magnetic properties of electroless Co-B and Co-Fe-B deposits, as well as the amorphous ribbon substrates, were investigated. These Co-based alloy deposits exhibited characteristic polycrystalline structures and surface morphology and magnetic properties that were dependent on the type of amorphous substrates. The catalytic activity sequence of the amorphous ribbon electrodes for anodic oxidation of DMAB was estimated from the current density-potential curve in the anodic partial electrolytic bath that did not contain the metal ions. Both the deposition rate and potential in the initial region were obtained in order of the catalytic activity, depending on the alloy compositions of the substrates. The deposition rate linearly varied against the deposition time. The initial deposition potential may have also determined the structural and magnetic properties of the deposit based on the thickness of ${\mu}m$ order. Furthermore, a basic study of the electroless deposition processes on an amorphous ribbon substrate has been carried out in connection with the structural and magnetic properties of the deposits.

Ni기 비정질 벌크합금의 제조와 기계적 성질 (Fabrication and Mechanical Properties of Ni-based Amorphous Bulk Alloys)

  • 김성규
    • 한국주조공학회지
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    • 제22권6호
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    • pp.288-292
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    • 2002
  • Ni-base amorphous alloys were manufactured using melt-spinning and Cu-mold die casting methods. Amorphous formability, the supercooled liquid region before crystallization and mechanical properties were examined. The reduced glass transition temperature and the supercooled liquid region of $Ni_{51} Nb_{20} Zr_9 Ti_9 Co_8 Cu_3$alloy were 0.621 and 46 K respectively. $Ni_{51} Nb_{20} Zr_9 Ti_9 Co_8 Cu_3$ alloy was produced in the rod shape 3mm diameter using the Cu-mold die casting. Hardness, compression strength, elongation and elastic modulus of the alloy were 850 DPN, 2.75 GPa, 1.8% and 150 GPa respectively. Moreover, compression strength of 2.75 GPa was the highest value in the amorphous bulk alloy produced up to now.

Thermal Stability, Mechanical Properties and Magnetic Properties of Fe-based Amorphous Ribbons with the Addition of Mo and Nb

  • Han, Bo-Kyeong;Jo, Hye-In;Lee, Jin Kyu;Kim, Ki Buem;Yim, Haein
    • Journal of Magnetics
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    • 제18권4호
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    • pp.395-399
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    • 2013
  • The metallic glass ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) were obtained by melt spinning with 25-30 ${\mu}m$ thickness. The thermal stability, mechanical properties and magnetic properties of Fe-Co-B-Si based systems were investigated. The values of thermal stability were measured using differential scanning calorimetry (DSC), including glass transition temperature ($T_g$), crystallization temperature ($T_x$) and supercooled liquid region (${\Delta}T_x=T_x-T_g$). These amorphous ribbons were identified as fully amorphous, using X-ray diffraction (XRD). The mechanical properties of Febased samples were measured by nano-indentation. Magnetic properties of the amorphous ribbons were measured by a vibrating sample magnetometer (VSM). The amorphous ribbons of $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Mo_4$ (x = 0, 0.3, 0.6, 0.9 at.%) and $[(Fe_xCo_{1-x})_{0.75}B_{0.2}Si_{0.05}]_{96}Nb_4$ (x = 0, 0.3, 0.6, 0.9 at.%) exhibited soft magnetic properties with low coercive force ($H_c$) and high saturation magnetization (Ms).

Surface Crystalline Modification for Asymmetric Giant Mngnetoimpedance Profile in Annealed Co-based Amorphous Ribbons

  • Rheem, Y.W;Kim, C.G;Kim, C.O;Choi, Y
    • Journal of Magnetics
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    • 제6권3호
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    • pp.86-89
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    • 2001
  • Microstructure modifications are investigated for annealed Co-based amorphous ribbon in vacuum and open air. X-ray diffraction (XRD) spectra for annealed sample in vacuum indicate atomic arrangements with initial nucleation of hcp-Co crystallite at 38$0^{\circ}C$ annealing temperature. However, the XRD spectra in samples with long annealing times of $t_a\geq300$ min demonstrate sharp and good developed surface crystalline hcp-, fcc- Co and $Co_2$Si phases. The giant magnetoimpedance (GMI) profile at 0.1 MHz displaying one-peak behavior in vacuum annealed samples at T = 38$0^{\circ}C$ irrespective of annealing time $t_a$ from 20 to 480 mim. For the annealed samples in an open air, the GMI profile shows two-peaks for $t_a$ = 20 min annealed sample. However, one of peaks disappears and an asymmetric GMI profile exhibits a drastic step-like change near zero field for $t_a\geq300$min. Such asymmetric GMI characteristics is related to the surface microstructures of fcc-Co, hop-Co and $Co_2$Si crystalline phases.

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자기터널접합을 활용한 고집적 MRAM 소자 기술 (High Density MRAM Device Technology Based on Magnetic Tunnel Junctions)

  • 전병선;김영근
    • 한국자기학회지
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    • 제16권3호
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    • pp.186-191
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    • 2006
  • 자기터널접합 기반의 MRAM(magnetic random access memory)은 자기저항효과를 응용하는 메모리소자로서 비휘발성과 고속 정보처리가 가능할 뿐만 아니라 고집적화 할 수 있는 차세대 통합형 비휘발성 메모리이다. 그러나 기존의 메모리 소자들에 비해 스위칭 산포가 크고, 기록마진(writing margin)이 확보되지 않아 아직까지는 고집적화가 어려운 실정이다. 최근 포화자화가 낮은 NiFeSiB 및 CoFeSiB과 같은 비정질 강자성체를 자기터널접합의 자유층 재료로 사용하여 스위칭 자기장의 거대화를 크게 감소시켜 MRAM의 기록마진을 높이는 연구결과에 관해 정리하여 보았다. 그리고 이러한 물질을 이용하여 자기터널접합의 재생마진(reading margin)과 관련된 터널자기저항비의 인가전압의존성을 저감시킬 수 있었다. 본고에서는 나노자기소자 기술의 중요한 분야인 MRAM의 기술발전 방향과 연구사례를 소개하고자 한다.

하지층기판온도에 따른 CoCrTa/Si 이층박막의 특성변화 (Characteristics variation of CoCrTa/Si double layer thin film on variation of underlayer substrate temperature)

  • 박원효;김용진;금민종;가출현;손인환;최형욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.77-80
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    • 2001
  • Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

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$Co_{89}Nb{8.5}Zr{2.5}$ 비정질 박막의 이방성에 미치는 열처리 효과 (Effect of Annealing on the Magnetic Anisotropy of Amorphous $Co_{89}Nb{8.5}Zr{2.5}$Thin Films)

  • 김현식;민복기;송재성;오영우
    • 한국전기전자재료학회논문지
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    • 제11권6호
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    • pp.486-492
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    • 1998
  • The amorphous Co-based magnetic films have a large saturation flux density, a low coercive force, and a zero magnetostriction constant. Therefore, they have been studied for application to magnetic recoding heads and micro magnetic devices. However, it was found that the magnetic anisotropy was changed for each film fabrication processes. In this study, we investigated how to control the anisotropy of sputtered amorphous $Co_{89}Nb{8.5}Zr{2.5}$ films. After deposition, the rotational field annealing ant the uniaxial field annealing were performed under the magnetic field of 1.5 kOe. the annealing was done at the temperature range from 400 to $600^{\circ}C$ for one hour. As-deposited amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin film had saturation magnetization ($4\piM_5$) of 0.8 T, coercive force($_IH_C$) of 1.5 Oe, and anisotropy field($H_k$) of 11 Oe. The amorphous $Co_{89}Nb{8.5}Zr{2.5}$ thin films annealed by rotational field annealing at $500^{\circ}C$ for one hour was found to be isotropy, and $4\piM_5$ of 0.9 T was obtained from these films, Also, the magnetic anisotropy of as-deposited films could be controlled by uniaxial field annealing at $400^{\circ}C$ for one hour. Anisotropy field($H_k$) of 17 Oe and $4\piM_5$ of 1.0 T were obtained by this method.

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Capping층 재료에 따른 CoFeB/MgO/CoFeB 자기터널접합의 미세구조와 자기저항 특성 (Microstructural and Magnetic Properties of CoFeB/MgO/CoFeB Based Magnetic Tunnel Junction Depending on Capping Layer Materials)

  • 정하창;이성래
    • 한국자기학회지
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    • 제17권4호
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    • pp.162-165
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    • 2007
  • 본 연구에서는 CoFeB/MgO/CoFeB 구조를 가지는 자기터널접합에서 capping층 재료의 종류와 열처리 시간에 따른 비정질 top CoFeB 자성층의 결정화 상태 및 자기터널접합의 자기적 특성 변화에 대한 연구결과를 비교 분석 하였다. Hcp(Hexagonal close-packed)의 결정구조를 가지는 Ru(002)를 capping층 재료로 사용한 자기터널접합 박막의 경우에는 열처리 이후 Ru과 인접한 부분의 top CoFeB이 bcc-CoFe(110)로 성장하는 반면, TiAl과 ZrAl을 capping층 재료로 사용한 자기터널접합의 경우는 열처리 이후 top CoFeB이 MgO와 epitaxial하게 bcc-CoFe(002)로 결정성장 하였다. 이로 인해 Ru을 사용한 자기터널접합의 터널자기 저항비(46.7%)보다 약 1.5배 높은 터널자기저항비(TiAl: 71.8%, ZrAl: 72.7%)를 나타내었다.