• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.832-835
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• 2005

Organosilicate Glass has quite a long history in the Semiconductor industry but has received very limited evaluation for Display industry applications. In this paper, we would like to introduce several kinds of Organosilicate Glasses for Display applications.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.123-128
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• 2014

To realize high-performance thin film solar cells, we prepared CIGS by the co-evaporation technique on both sodalime and Corning glass substrates. The structural and efficient properties were investigated by varying the thickness of the Mo:Na layer, where the total thickness of the back contact was fixed at 1${\mu}m$. As a result, when the Mo:Na thickness was 300 nm on soda-lime glass, the measured Na content was 0.28 %, the surface morphology was a plate-like compact structure, and the crystallinity by XRD showed a strong peak of (112) preferential orientation together with relatively intense (220) and (204) peaks as the secondary phases influenced crystal formation. In addition, the substrates on soda-lime glass effected the lowest surface roughness of 2.76 nm and the highest carrier density and short circuit current. Through the optimization of the Mo:Na layer, a solar conversion efficiency of 11.34% was achieved. When using the Corning glass, a rather low conversion efficiency of 9.59% was obtained. To determine the effects of the concentration of sodium and in order to develop a highefficiency solar cells, a very small amount of sodium was added to the soda lime glass substrate.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.245-250
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• 1999

The effect of substrate and oxidization time on $substrate /Py/Al_2O_3/Co\;(Py=Ni_{81}Fe_{19})$ tunnel junction was studied. Samples were prepared without breaking vacuum by changing shadow masks in-situ. The resistance of tunnel junctions increased, but measured MR decreased with oxidization time. Negative MR observed for samples of tunnel resistivity lower than 0.17 M$\Omega$ $({\mu}m)^2$. MR resistivity decreased with the change of substrates in the order of thermally oxidized Si(111), Si(100), Coring Glass 2948, Corning Glass 7059. Sign change and the variation of MR was explained with non uniform current effect.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.2
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• pp.53-58
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• 1998

Sintering and dielectric characteristics of substrates were estimated by mixing rate of alumina and potashborosilicate glass(PBSG) powders. PBSG powders were used 7761(corning code)and alumina powders were used in extra pure rate(99.9%) and had 0.1 ${\mu}$m mean size. After ball milling with organic additives green sheets which were casted by doctor blade machine were sintered at 800$^{\circ}C$ for 1∼3hrs. Microstructure, linear shrinkage and dielectric constant of substrates were surveyed in order to fabricate low-dielectric and low tem-perature sintering substrate.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.10a
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• pp.223-226
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• 2004

The objectives of this study are to evaluate mechanical properties of glass ceramic for dome port cover material o( the ramjet. Candidate material for dome port cover of the ramjet is selected the machinable glass ceramic(MACOR glass-filled ceramic, Corning Glass Works, code 9658). Static and dynamic fracture toughness tests were performed to evaluate the apparent fracture toughness of notched specimen.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• v.y2005m4
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• pp.112-115
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• 2005

The objectives of this study are to evaluate the dynamic fracture toughness of advance glass ceramics(MACOR glass-filled ceramic, Corning Glass Works) for dome port cover of the ramjet. Static and dynamic fracture toughness tests are performed using strain gage method in the variation of notch radii.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.1
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.922-925
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• 2012

Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.