• 대한기계학회논문집A
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• 제21권1호
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• pp.104-111
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• 1997

Accounting for the additional damages come out from non-proportional loading path effect, material damage according to crystal structure dependence was studied. Microscopic observations of damaged material by SEM(Scanning Electron Microscope) showed crystal structure dependence. Biaxial in-phase loaded specimens showed the slips of same direction, which pararell each other, but biaxial 90.deg. out-of-phase loaded specimens showed multiply crossed slips. S. H. Doong and D. F. Socie reported that wavy/planar or planar slip material showed the increase in the cyclic hardening level during non-proportional cycling. From these results, the additional hardening and non-proportional loading effects were related with slip mechanism, and the slip mechanism was related with crystal structure. In the present study, a damage mechanism which accounts for the non-proportional loading effect from crystal structure dependence was considered and applied to A17075-T651.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.105-112
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• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.

• 대한전자공학회논문지
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• 제25권4호
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• pp.402-406
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• 1988

The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.208-208
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• 2009

We used Brewster's Law to examine the mechanism of liquid crystal (LC) alignment on an organic insulation layer when subjected to ion-beam irradiation. Brewster's Law implies that the maximum rate polarized ray on a slanted insulation layers on the substrate and it illustrates the dependence of polarization and themechanical structure on the ion beam irradiation process. The pretilt angle of nematic LCs on the organic insulation surface was about $1.13^{\circ}$ for an ion beam exposure of $45^{\circ}$ for 1 minute at 1800eV. This shows the dependence of LC alignment on the polarization ratio in a slanted organic insulation layer.

• 조명전기설비학회논문지
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• 제27권2호
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• pp.1-6
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• 2013

In this paper, we implemented a polarimetric strain sensor using a Sagnac birefringence interferometer composed of a polarization-maintaining photonic crystal fiber (PM-PCF). By changing the length of the PM-PCF employed as the sensor head of the proposed sensor, the length dependence of the strain sensitivity was investigated. With respect to 5.0-, 7.5-, and 10.0-cm-long PM-PCFs, strain measurements were done in a measurement range of $0{\sim}6m{\varepsilon}$, and strain sensitivities of ~2.04, ~1.92, and ${\sim}1.73pm/{\mu}{\varepsilon}$ were obtained, respectively. If an ideal PM-PCF with no length dependence of a modal birefringence is used for the proposed sensor, the strain sensitivity is independent of the length of the sensor head (PM-PCF). In the practical PM-PCF used in experiments, however, a shorter PM-PCF has a higher length dependence of the modal birefringence due to its imperfectness and nonuniformity of the internal structure, resulting in a higher length dependence of the strain sensitivity.

• Journal of the Optical Society of Korea
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• 제15권4호
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• pp.398-402
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• 2011

In this paper, we have proposed a principle to design wideband, low dispersion and temperature stabilized slow light structure in slotted photonic crystal waveguide (SPCW). The infiltration of the silicon photonic crystal with polymer will enhance the slow light and increase the group index, whereas the different signs of thermo-optic coefficients of polymer and silicon make the proposed structure stable on temperature variation over $60^{\circ}C$ and improves the group index-bandwidth products of the designed structure. The SPCW structure is modified to maximize the slow light effect and minimize the dependence of the group index and hence the group velocity dispersion to temperature.

• 통합자연과학논문집
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• 제3권1호
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• pp.54-59
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• 2010

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)=1.8622eV-(5.23{\times}10^{-4}eV/K)T^2/(T+775.5K)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.121-122
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• 2007

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched sem-insulating GaAs(l00) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}l0^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155\;K)$.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.202-204
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• 2004

We study theoretically optical properties of thin layered stacked monochrome cholesteric liquid-crystal displays. Thin thickness of the layers (${\sim}1{\mu}m$) allows us appreciably to reduce driving voltage and use such displays in smart cards. Good selective reflection is achieved due to stacked structure. Dependence of the reflectivity of this type of displays on the quantity of the layers, their thickness, and liquid crystal birefringence is investigated.