• Korean Journal of Materials Research
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• v.26 no.12
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• pp.714-720
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• 2016

We performed this study to understand the effect of a single-crystalline anode on the mechanical properties of as-deposited films during electrochemical deposition. We used a (111) single- crystalline Cu plate as an anode, and Si substrates with Cr/Au conductive seed layers were prepared for the cathode. Electrodeposition was performed with a standard 3-electrode system in copper sulfate electrolyte. Interestingly, the grain boundaries of the as-deposited Cu thin films using single-crystalline Cu anode were not distinct; this is in contrast to the easily recognizable grain boundaries of the Cu thin films that were formed using a poly-crystalline Cu anode. Tensile testing was performed to obtain the mechanical properties of the Cu thin films. Ultimate tensile strength and elongation to failure of the Cu thin films fabricated using the (111) single-crystalline Cu anode were found to have increased by approximately 52 % and 37 %, respectively, compared with those values of the Cu thin films fabricated using apoly-crystalline Cu anode. We applied ultrasonic irradiation during electrodeposition to disturb the uniform stream; we then observed no single-crystalline anode effect. Consequently, it is presumed that the single-crystalline Cu anode can induce a directional/uniform stream of ions in the electrolyte that can create films with smeared grain boundaries, which boundaries strongly affect the mechanical properties of the electrodeposited Cu films.

• Macromolecular Research
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• v.11 no.4
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• pp.224-230
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• 2003

The blends of polypropylene (PP) with glass filled thermotropic liquid crystalline polymer (LCP-g) have been prepared by melt mixing techniques at different blend ratios. The thermal, dynamic mechanical, crystalline and morphological characteristics of these blends were investigated. Higher percent crystallinity was observed for 10% level of LCP-g in the blend in comparison to that of other blend ratios. The thermal stability increased with LCP-g concentration in the blend with PP. The variation of storage modulus, stiffness and loss modulus as a function of blend ratios suggested the phase inversion at the 50% level of LCP-g in the blend. The scanning electron microscopy (SEM) photographs showed the creation of voids and destruction of the fiber structures during the dynamic mechanical measurements. Processing behavior of the blends depended on the fiber forming characteristics of LCP-g, which again varied with the molding temperatures.

• Transactions on Electrical and Electronic Materials
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• v.13 no.6
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• pp.322-325
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• 2012

Crystalline silica was synthesized by annealing amorphous silica at $1,300^{\circ}C$ or $1,400^{\circ}C$ for various times, and the crystallinity was estimated by X-ray diffraction (XRD) analysis. In order to prepare a low dielectric material, epoxy/crystalline silica composites were prepared, and the effect of silica content on the dielectric properties was studied under various functions of frequency and ambient temperature. The dielectric constant decreased with increasing crystalline silica content in the epoxy composites, and it also decreased with increasing frequency. At 120 Hz, the value of 5 wt% silica decreased by 0.25 compared to that of 40 wt% silica, and at 23 kHz, the value of 5 wt% silica decreased by 0.23 compared to that of 40 wt% silica. The value increased with increasing ambient temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.542-544
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• 2007

New liquid crystalline Y-shaped molecules containing 1,3,4-oxadizoles have been synthesized with variation of terminal groups (R = H, $OCH_3$ or $OC_8H_{17}$). The structures of obtained compounds were identified by FT/IR and NMR spectrometry, and their thermal and liquid crystalline properties were investigated by DSC and polarizing optical microscope.

• Journal of the Korean Society of Industry Convergence
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• v.2 no.2
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• pp.61-68
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• 1999

The variety of crystalline structure and mechanical properties of PP filament treated with dry heat treatment at different draw ratio has been studied. Crystalline structure and mechanical properties of annealed PP filament at different draw ratio has been examined by XRD, UTM, and density method. Heat treatment has been carried out $100^{\circ}C$, $120^{\circ}C$ $140^{\circ}C$ for 30min. in dry oven. From the results of this study, it found the following facts. It was found that the crystallinity and crystallite size of (110) plane of sample were increased with increasing of annealed temperature and draw ratio. The crystalline form of annealed sample which was undrawn showed ${\alpha}$, ${\beta}$ mixing form below $120^{\circ}C$ and showed ${\alpha}$ form at $140^{\circ}C$. But the crystalline form of annealed sample which was drawn showed ${\alpha}$ form at $120^{\circ}C$. Initial modulus and tensile strength were increased with increasing of annealing temperature, and the degree of orientation was decreased with decreasing of annealing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.6-6
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• 1992

Ionized cluster beam deposition (ICBD) technique has been employed to fabricate high-purity crystalline polyimide (PI) film. The pyromellitic dianhydride (PMDA) and oxydianiline (ODA) were deposited using dual ICB sources, Fourier trans forminfraredspectroscopy (FT-IR), X-ray photoemission spectroscopy (XPS), and Transmission electron microscopy (TEM)study show that the bulk and surface chemical properties and the crystalline structure are very sensitive to the ICBD conditions such as cluster ion acceleration voltage and ionization voltage, At optimum ICBD conditions, the PI films have a maximum imidization, negligible impurities(∼1% isoimide), and a good crystalline structure probably due to the high surface migration energy and surface cleaning effect. These characteristics are superior to those of films deposited by other techniques such as colvent cast, vapowr deposition, or sputtering techniques.

• Advances in materials Research
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• v.8 no.3
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• pp.179-196
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• 2019

This paper researches static and dynamic bending behaviors of a crystalline nano-size shell having pores and grains in the framework of strain gradient elasticity. Thus, the nanoshell is made of a multi-phase porous material for which all material properties on dependent on the size of grains. Also, in order to take into account small size effects much accurately, the surface energies related to grains and pores have been considered. In order to take into account all aforementioned factors, a micro-mechanical procedure has been applied for describing material properties of the nanoshell. A numerical trend is implemented to solve the governing equations and derive static and dynamic deflections. It will be proved that the static and dynamic deflections of the crystalline nanoshell rely on pore size, grain size, pore percentage, load location and strain gradient coefficient.

• Textile Coloration and Finishing
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• v.9 no.6
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• pp.18-25
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• 1997

The change of crystalline structure and mechanical properties of i-PP films which had before isothermally annealed at various temperature and times have been studied. The following results were abtain The crystallinity and crystallite size of the samples showed increasing above the annealing temperature of 13$0^{\circ}C$ and these are equilibrated after an annealing time of 30min. When the crystalline form was at annealling condition were below 13$0^{\circ}C$, 2min, subsequently achieving an $\alpha$, $\beta$ mixing form and at 13$0^{\circ}C$, 10min, the crystalline form entered an $\alpha$ form transition. It is achieved a typical $\alpha$ form at 15$0^{\circ}C$. The value of T'm was increasing until 13$0^{\circ}C$ but it was not founded at 15$0^{\circ}C$. The slopes which represented crystalline form in an Avrami plot differed from each other within the range of this experiment.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.767-771
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• 1995

The atomic structure and magnetic properties of $LaCo_{13}$ amorphous alloy have been investigated and compared with those of its crystalline counterpart. It has been confirmed that the amorphous alloy is composed of the icosahedral clusters with a $NaZn_{13}$-type structure. The magnetic moment and the spin- wave stiffness constant obtained from the magnetic measurements in the amorphous state are larger than those in the crystalline state. The Curie temperature estimated from the reduced magnetization curve for the former is much higher than the value for the latter. The localized magnetic moment character in the amorphous state is stronger than that in the crystalline state.