• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.706-714
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• 1998

The MgO-{{{{ { {Al }_{2 }O }_{3 } }}-{{{{ { {SiO }_{2 } }_{ } }}system containing alumina powder was fabricated sintered at various temperature and analyzed in order to study the sintering mechanism and crystallization characteristics. The specimen composed of glass powder with average particle size of 8.27 $\mu\textrm{m}$ and 0-40 vol% alumina powder were sint-ered for 3 hrs at the temperature between 850$^{\circ}C$ and 1350$^{\circ}C$ The sintering mechanism consists of the redis-tribution of particles occuring at 750$^{\circ}C$ and the viscous flow at 850∼950$^{\circ}C$. The degree of crystallization and sintering temperatue were dependent upon the ratio of glass/alumina. The second phase from the reaction between glass and alumina was not observed which was confirmed by XRD and properties analysis. The density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm2 5.8∼7.38 at 1 GHz density dielectric constant and specific resistivity of specimen were 2.30∼3.26g/cm3 5.8∼7.38 at 1GHz and 1.23∼4.70${\times}$107 $\Omega$$.$m respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.652-657
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• 2001

Vanadate glasses containing 10~20mol% glass former, P$_2$O$_{5}$ were prepared by melting the batch in platinum crucible and quenching on the copper plate. Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass-ceramics having LiV$_3$O$_{8}$ were obtained by heat-treatment of this glass in crystallization temperature. The glass-ceramics showed singnificantly good capacity and long cycles life according to heating condition. In this paper, we described electrochemical properties during crystallization process and found the best crystallizaton condition of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass as cathode material. Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass-ceramics heat-treated at 233$^{\circ}C$ for 3 hors showed good rechargeable capacity of 220mAh/g in the cycling range between 2.0 and 3.9V.en 2.0 and 3.9V.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1772-1775
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• 2000

We have fabricated poly-Si TFTs by two-step crystallizaton. Poly-Si films have been prepared by furnace annealing(FA) and rapid thermal annealing(RTA) followed by subsequent the post-annealing, excimer laser annealing. The measured crystallinity of RTA and FA annealed poly-Si film is 77% and 68.5%, respectively. For two-step annealed poly-Si film, the crystallinity has been drastically to 87.7% and 86.3%. The RMS surface roughness from AFM results have been improved from 56.3${\AA}$ to 33.5${\AA}$ after post annealing. The measured transfer characteristics of the two-step annealed poly-Si TFTs have been improved significantly for the both FA-ELA and RTA-ELA. Leakage currents of two-step annealed poly-Si TFTs are lower than that of the devices by FA and RTA. From these results, we can describe the fact that the intra-grain defects has been cured drastically by the post-annealing.