• Korean Journal of Materials Research
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• v.24 no.4
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• pp.186-193
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• 2014

A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.147-152
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• 2002

This paper was studied on corrosion of heat exchanger tube for absorption refrigeration machine. In the 62 % lithium bromide solution at $60^{\circ}C$, polarization test of Cu, Al-brass, 10 % cupro nickel(90-10 % Cu-Ni) and 30 % cupronickel(70-30 % Cu-Ni) tube was carried out. And polarization behavior, polarization resistance characteristics, open circuit potential, anodic polarization of heat exchanger tube for absorption refrigeration machine were considered. The main results are as following: The open circuit potential of Al-brass tube becomes less noble than that of Cu tube, corrosion current density of that becomes lower than Cu tube. The open circuit potential of cupronickel tube is more noble than that of Cu tube, corrosion current density of that is controlled than Cu tube. The passivation critical current of 30 % Cu-Ni tube is lower than that of 10 % Cu-Ni tube, potential of passive region of that is more wide than 10 % Cu-Ni tube.

• Journal of Welding and Joining
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• v.33 no.3
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• pp.47-53
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• 2015

By the trends of electronic package to be more integrative, the fine Cu trace pitch of organic PCB is required to be a robust design. In this study, the short circuit failure mechanism of PCB with a Cl element under the Temperature humidity bias test ($85^{\circ}C$/85%RH/3.5V) was examined by micro-structural study. A focused ion beam (FIB) and an electron probe micro analysis (EPMA) were used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $CuCl_x$ were formed and grown on Cu trace during the $170^{\circ}C$/3hrs and that $CuCl_x$ was decomposed into Cu dendrite and $Cl_2$ gas during the $85^{\circ}C$/85%RH/3.5V. It is suggested that Cu dendrites formed on Cu trace lead to a short circuit failure between a pair of Cu traces.

• Korean Journal of Materials Research
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• v.25 no.4
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• pp.171-176
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• 2015

We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $100^{\circ}C$. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from $60^{\circ}C$ to $200^{\circ}C$. It is supposed from these results that the p-type oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Korean Journal of Materials Research
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• v.24 no.1
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• Fire Science and Engineering
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• v.18 no.4
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• pp.72-77
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• 2004

In this paper, we studied on the short-circuit process, surface structure, and component variation of vinyl cords. In the results of high speed imaging system (HSIS) analysis, as soon as wire covering was damaged by heat, the conductor of wire came in contact with the other conduct of wire, and the short-circuit occurred. Stereomicroscope and SEM analysis indicated that the source part of wire showed V-type form. The molten beads of load part were bigger than those of source part. In the results of EDX analysis, Cu and O were detected in the source part, whereas covering material (Cl, Ca), Cu and O were detected in the load part. The results will help us to find out the cause of electrical fire.

• Korean Journal of Materials Research
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• v.23 no.9
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.136-138
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• 2006

Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. Ion migration phenomena has been observed in the field of exposing the specific environment and using for a long time. Also as the RoHS restriction was started in July 1st, 2006, Pb-free solder was utilized in electronics assemblies. In this case, it is very important to compatible between components and printed circuit board(PCB), thus surface treatment materials of PCB was changed to Sn, Sn-3.0Ag-0.5Cu, Cu. Therefore these new application become to need to reevaluate the sensitivity about electrochemical ion migration. This study was evaluated the occurrence time of electrochemical ion migration using by water drop test. We utilized PCB(printed circuit board) having a comb pattern as follows 0.1, 0.318, 0.5, 1.0 mm pattern distance. Sn-3.0Ag-0.5Cu and Sn-37Pb were electroplated on the comb pattern. 6.5V and 15.0V were applied in the comb pattern and then we measured the electrical short time causing by occurring the ion migration. In these results, we evaluate the sensitivity and derived the prediction models of ion migration occurrence time depending on the pattern materials, applied voltage and pattern spacing of PCB conductor.