• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Journal of Magnetics
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• v.6 no.3
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• pp.83-85
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• 2001

The magnetoresistance properties of NiO/NiFe/Cu/NiFe spin valve film deposited on MgO(100) substrate with YBa$_2$$Cu_3O_7$(YBCO) film were investigated at room temperature and at 77 K. The magnetoresistance (MR) curves of the hybrid superconductor-magnetoresistor film structure showed an exchange coupling field of 300 Oe and an inverse magnetoresistance ratio of -6.5%. The magnetization configurations of the two magnetic layers in the NiO spin valve were antiparallel due to an increment in the conduction electron flow to superconductor YBCO film. This sample showed an inverse MR ratio.

• Bulletin of the Korean Chemical Society
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• v.26 no.12
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• pp.2054-2056
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• 2005

• Journal of the Korean Chemical Society
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• v.50 no.1
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• pp.60-64
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• 2006

has been synthesized using the layered organic-inorganic hybrids, Cu2(OH)3(CH3COO)·H2O as a precursor. Cubic Cu2O is synthesized by reducing Cu2(OH)3(CH3COO)·H2O with glucose in water at 75oC. The effects of precursor and glucose are investigated. The structure of Cu2(OH)3(CH3COO)·H2O plays an important role in preparing the uniform size of Cu2O.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.587-590
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• 2012

Recently, the demand for the miniaturization of package substrates has been increasing. Technical innovation has occurred to move package substrate manufacturing steps into CMP applications. Electroplated copper filled trenches on the substrate need to be planarized for multi-level wires of less than $10{\mu}m$. This paper introduces a chemical mechanical planarization (CMP) process as a new package substrate manufacturing step. The purpose of this study is to investigate the effect of surfactant on the dishing and erosion of Cu patterns with the lines and spaces of around $10/10{\mu}m$ used for advanced package substrates. The use of a conventional Cu slurry without surfactant led to problems, including severe erosion of $0.58{\mu}m$ in Cu patterns smaller than $4/6{\mu}m$ and deep dishing of $4.2{\mu}m$ in Cu patterns larger than $14/16{\mu}m$. However, experimental results showed that the friction force during Cu CMP changed to lower value, and that dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, it was possible to realize more globally planarized Cu patterns with erosion ranges of $0.22{\mu}m$ to $0.35{\mu}m$ and dishing ranges of $0.37{\mu}m$ to $0.69{\mu}m$ by using 3 wt% concentration of surfactant.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.135-139
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• 2004

The layered organic-inorganic hybrid compounds($C_6H_5CH_2NH_3)_2CuCl_4$ and ($NH_3C_6/H_4C_2H_4_6/H_4NH_3)CuCl_4$ have been directly synthesized. From the X-ray diffraction data and the organic guest size, the orientation of the intercalated organic amine was determined. The inorganic sheets consist of $CuCl_4^{2-}$layers of comer-sharing octahedra copper chloride. The protonated organic amine was intercalated into the $CuCl_4^{2-}$layers with bilayer structure for ($C_6H_5CH_2NH_3)_2CuCl_4$ and monolayer structure for ($NH_3C_6/H_4C_2H_4_6/H_4NH_3)CuCl_4$.

• Journal of Magnetics
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• v.17 no.4
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• pp.261-264
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• 2012

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve device performance of organic spintronic devices by utilizing an artificially grown MgO(001) thin layer.

• Journal of the Korean Magnetics Society
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• v.22 no.5
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• pp.162-166
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• 2012

V-I characteristics of Fe(100)/MgO(100)/Cu-phthalocyanine (CuPc)/Co hybrid magnetic tunnel junctions were investigated at different temperatures. Fe(100) and Co ferromagnetic layers were separated by an organic-inorganic hybrid barrier consisting of different thickness of CuPc thin film grown on a 2 nm thick epitaxial MgO(100) layer. As the CuPc thickness increases from 0 to 10 nm, a bistable switching behavior due to strong charging effects was observed, while a very large magenetoresistance was shown at 77 K for the junctions without the CuPc barrier. This switching behavior decreases with the increase in temperature, and finally disappears beyond 240 K. In this work, high-potential future applications of the MgO(100)/CuPc bilayer were discussed for hybrid spintronic devices as well as polymer random access memories (PoRAMs).

• Journal of Powder Materials
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• v.22 no.3
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• pp.169-174
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• 2015

The optical film for light luminance improvement of BLU that is used in LCD/LED and retro-reflective film is used as luminous sign consist of square and triangular pyramid structure pattern based on V-shape micro prism pattern. In this study, we analyzed machining characteristics of Cu-plated flat mold by shaping with diamond tool. First, cutting conditions were optimizing as V-groove machining for the experiment of micro prism structure mold machining with prism pattern shape, cutting force and roughness. Second, the micro prism structure such as square and triangular pyramid pattern were machined by cross machining method with optimizing cutting conditions. Burr and chip shape were discussed with material properties and machining method.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.