• Journal of Welding and Joining
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• v.30 no.3
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.9
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• pp.20-25
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• 1998

Cu removal rates for various SiO$_2$ trench pitch sizes and densities and AFM images of surface profiles after global planarization using Cu CMP technology are investigated. In the experimental results, Cu removal rates are increasing as the pattern densities and pattern pitches are getting high and low, respectively, and then decreasing after local planarization. The rms roughness after global planarization are about 120$\AA$. AFM images with a 50% pattern density for 1${\mu}{\textrm}{m}$ and 2${\mu}{\textrm}{m}$ pitches show that thicknesses of 120~330$\AA$ Cu interconnects have been peeled off and oxide erosion of Cu/Sio$_2$ sidewall is observed. However, AFM images with a 50% pattern density for 10${\mu}{\textrm}{m}$ and 15${\mu}{\textrm}{m}$ pitches show that 260~340$\AA$ thick Cu interconnects have been trenched at the boundaries of Cu/Sio$_2$ sidewall.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.231-231
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• 2010

현재 Cu배선 제조공정에서 전해도금은 Damascene pattern의 Cu filling에 사용되고 있는데, 우수한 특성의 전해도금을 위해서는 step coverage가 우수한 Cu seed layer가 필수적이다. 현재까지 Cu seed layer를 형성하는 방법으로는 ionized physical vapor deposition(I-PVD)이 사용되고 있는데, 22 nm 이후의 소자에서는 step coverage의 한계로 인해 완벽한 Cu filling 어려울 것으로 예상된다. 본 연구에서는 step coverage가 매우 우수한 atomic layer deposition(ALD) 방법으로 Cu seed layer를 증착하고 그 특성을 기존의 PVD 박막과 비교하였다. Ketoiminate 계열의 +2가 Cu 전구체와 $H_2$를 이용하여 ALD Cu 박막을 증착하였는데 exposure, 기판의 온도를 변화시키면서 기판별로 ALD Cu의 최적공정조건을 도출하였다. ALD Cu seed와 PVD Cu seed 위에 약 $1{\mu}m$의 Cu 박막을 전해도금한 후 박막의 두께, 비저항, 미세구조와 함께 pattern filling 특성을 비교하였다.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.15-20
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• 2003

Diffusion speed of Cu metal fine particle is fast better than CuO, so it will promote grain growth in sintering. In this paper, the influence on substituting Cu fine particle for CuO of NiCuZn ferrite with basic composition (N $i_{0.204}$C $u_{0.204}$Z $n_{0.612}$ $O_{1.02}$)F $e_{1.98}$ $O_{2.98}$ has been investigated with varying Cu/CuO ratio. The perfect spinel structure of sintered specimen at 90$0^{\circ}C$ was confirmed by the analysis of XRD patterns. The best condition was obtained when the ratio of Cu/CuO was 60%, and the permeability was 1100 and Ms was 87 emu/g in this condition. Cu has influenced on grain growth in sintering, substituting Cu fine particle for CuO could lower sintering temperature over the 3$0^{\circ}C$. After sintering, substituting Cu performed as good as CuO.s CuO.s CuO.

• Mass Spectrometry Letters
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• v.14 no.4
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• pp.153-159
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• 2023

The copper ion, Cu(II), binding sites for amyloid fragment Aβ1-16 (=Aβ16 ) were investigated to explain the biological activity difference in the Aβ16 aggregation process. The [M+Cu+(z-2)H]^z+ (z = 2, 3 and 4, M = Aβ16 monomer) and [D+Cu+(z-2)H]^z+ (z = 3 and 5, D = Aβ16 dimer) structures were investigated using electrospray ionization (ESI) mass spectrometry (MS) and tandem mass spectrometry (MS/MS). Fragment ions of the [M+Cu+(z-2)H]^z+ and [D+Cu+(z-2)H]^z+ complexes were observed using collision-induced dissociation MS/MS. Three different fragmentation patterns (fragment "a", "b", and "y" ion series) were observed in the MS/MS spectrum of the (Aβ16 monomer or dimer-Cu) complex, with the "b" and "y" ion series regularly observed. The "a" ion series was not observed in the MS/MS spectrum of the [M+Cu+2H]⁴⁺ complex. In the non-covalent bond dissociation process, the [D+Cu+3H]⁵⁺ complex separated into three components ([M+Cu+H]³⁺, M³⁺, and M²⁺), and the [M+Cu]²⁺ subunit was not observed. The {M + fragment ion of [M+Cu+H]³⁺} fragmentation pattern was observed during the covalent bond dissociation of the [D+Cu +3H]⁵⁺ complex. The {M + [M+Cu+H]³⁺} complex geometry was assumed to be stable in the [D+Cu+3H]⁵⁺ complex. The {M + fragment ion of [M+Cu]²⁺} fragmentation pattern was also observed in the MS/MS spectrum of the [D+Cu+H]³⁺ complex. The {M + [y₉+Cu]¹⁺} fragment ion was the characteristic fragment ion. The [D+Cu+H]³⁺ and [D+Cu+3H]⁵⁺ complexes were likely to form a monomer-monomer-Cu (M-M-Cu) structure instead of a monomer-Cu-monomer (M-Cu-M) structure.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.51-54
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• 2015

An electro-plating technology on a cured isotropic conductive pattern with a hybrid Cu paste composed of resin matrix, copper, and solder powders has been developed. In a conventional technology, Ag paste was used to perform a conductive pattern on a PCB or silicon substrate. From previous research, the electrical conductive mechanism and principle of the hybrid Cu paste were concisely investigated. The isotropic conductive pattern on the PCB substrate was performed using screen-printing technology. The optimum electro-plating condition was experimentally determined by processing parameters such as the metal content of the hybrid Cu paste, applied current density, and time for the electroplating in the plating bath. The surfaces and cross-sections were observed using optical and SEM photographs. In conclusion, the optimized processing conditions for Cu electro-plating technology on the conductive pattern were a current density of $40mA/cm^2$ and a plating time of 20min on the hybrid Cu paste with a metal content of 44 vol.%. More details of the mechanical properties and processing conditions will be investigated in further research.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.719-726
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• 2015

For a decade, solution-processed functional materials and various printing technologies have attracted increasingly the significant interest in realizing low-cost flexible electronics. In this study, Cu nanoparticles are synthesized via the chemical reduction of Cu ions under inert atmosphere. To prevent interparticle agglomeration and surface oxidation, oleic acid is incorporated as a surface capping molecule and hydrazine is used as a reducing agent. To endow water-compatibility, the surface of synthesized Cu nanoparticles is modified by a mixture of carboxyl-terminated anionic polyelectrolyte and polyoxylethylene oleylamine ether. For reducing the surface tension and the evaporation rate of aqueous Cu nanoparticle inks, the solvent composition of Cu nanoparticle ink is designed as DI water:2-methoxy ethanol:glycerol:ethylene glycol = 50:20:5:25 wt%. The effects of poly(styrene-co-maleic acid) as an adhesion promoter(AP) on rheology of aqueous Cu nanoparticle inks and adhesion of Cu pattern printed on polyimid films are investigated. The 40 wt% aqueous Cu nanoparticle inks with 0.5 wt% of Poly(styrene-co-maleic acid) show the "Newtonian flow" and has a low viscosity under $10mPa{\cdots}S$, which is applicable to inkjet printing. The Cu patterns with a linewidth of $50{\sim}60{\mu}m$ are successfully fabricated. With the addition of Poly(styrene-co-maleic acid), the adhesion of printed Cu patterns on polyimid films is superior to those of patterns prepared from Poly(styrene-co-maleic acid)-free inks. The resistivities of Cu films are measured to be $10{\sim}15{\mu}{\Omega}{\cdot}cm$ at annealing temperature of $300^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.28-36
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• 2005

In this study, the reflow characteristics of copper thin films which is expected to be used as interconnection materials in the next generation semiconductor devices were investigated. Cu thin films were deposited on the TaN diffusion barrier by metal organic chemical vapor deposition (MOCVD) and annealed at the temperature between 250℃ and 550℃ in various ambient gases. When the Cu thin films were annealed in the hydrogen ambience compared with oxygen ambience, sheet resistance of Cu thin films decreased and the breakdown of TaN diffusion barrier was not occurred and a stable Cu/TaN/Si structure was formed at the annealing temperature of 450℃. In addition, reflow properties of Cu thin films could be enhanced in H₂ ambient. With Cu reflow process, we could fill the trench patterns of 0.16～0.24 11m with aspect ratio of 4.17～6.25 at the annealing temperature of 450℃ in hydrogen ambience. It is expected that Cu reflow process will be applied to fill the deep pattern with ultra fine structure in metallization.