• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.744-746
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• 2008

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$Cu_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.612-614
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• 2008

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10nm to 50nm, we have obtained that the optimum CuPc layer thickness is around 40nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• 한국대기환경학회지
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• 제20권4호
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• pp.515-521
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• 2004

The catalytic oxidation of volatile organic compounds (methanol. acetaldehyde) has been characterized using the copper phthalocyanine catalyst in a fixed bed flow reactor under atmospheric pressure. The catalytic activity for pretreatment conditions was examined by this reaction system. The catalytic activity was ordered as follows: metal free-PC＜Cu ($\alpha$)-PC＜Cu ($\beta$)-PC The formaldehyde, carbon monoxide as a partial oxidation product of methanol and acetaldehyde over Cu ($\alpha$)-PC catalyst were detected and the conversions of methanol and acetaldehyde were accomplished above 95% over Cu ($\alpha$) -PC, Cu ($\beta$) - PC catalyst at 35$0^{\circ}C$. The pretreated metal free -PC, Cu($\alpha$)-PC, Cu($\beta$)-PC catalysts have been characterised by TGA, EA and XRD analysis. The catalytic activity pretreated with air and $CH_3$OH mixture (P-4) or air only (P-5) was very excellent. XRD and EA results showed that Cu($\alpha$)-PC, Cu($\beta$)-PC were destroyed an(1 new metal oxide such as CuO were formed.

• 대한화학회지
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• 제38권9호
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• pp.632-639
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• 1994

가시부 영역에서 산화아연을 광증감시키기 위해 copper phthalocyanine(CuPc)과 sunfast yellow(SY)를 산화아연 분말에 이층 흡착시켰다. 산화아연에 대한 CuPc의 흡착상태를 알기 위하여 ZnO/CuPc의 광음향, IR 및 라만 스펙트럼을 측정한 결과, CuPc는 $\alpha$형 및 $\beta$형의 결정 특성을 유지한 이합체 또는 분자들의 집합체 상태로 산화아연에 흡착된다는 것을 알았다. 산화아연에 CuPc 및 SY를 순차적으로 이층 흡착시킨계(ZnO/CuPc/SY)는 SY를 먼저 흡착시킨 ZnO/SY/CuPc계보다 광기전력이 높게 나타났고, $ZnO/\beta-CuPc/SY$는 $ZnO/\alpha-CuPc/SY$보다 광기전력이 높게 나타났다. $ZnO/\beta-CuPc/SY$의 전자사진 감도를 측정하였더니 630 nm에서 $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ 이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.535-536
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• 2005

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.337-337
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• 2011

The elecronic absorption and surface morphology evolution of two types of molecular double layer thin films, copper phthalocyanine(CuPc) layer deposited on top of chloro[subphtalocyaninato]boron(III) (SubPc) layer, denoted as SubPc/CuPc, and vice versa, at various thicknesses were invertigated using ultraviolet(UV)-visible spectroscopy and atomic force microscopy (AFM). Both types of double layer structures showed similar broadened absorption patterns in UV-visible region which were well consistent with fitted spectra by a simple linear combination of single layer absorption spectra of two materials. In contrast, the surface morphology of double layer structures was dependent on the order of deposition. For CuPc/SubPc structures, the surface morphology was characterized by elongated grains, characteristic of SubPc thin films, indicating the morphological influence of underlying CuPc layer on subsequent SubPc layer was not large. For SubPc/CuPc structures, however, the underlying SubPc layer acted as a morphological template for the subsequently deposited CuPc layer. It was also observed that the grain size of CuPc layer varied by the thickness of underlying SubPc layer.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.943-946
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• 2011

The electronic absorption and surface morphology evolution of two types of molecular double layer thin films, copper phthalocyanine (CuPc) layer deposited on chloro[subphthalocyaninato]boron(III) (SubPc) layer, denoted as SubPc/CuPc, and vice versa, with various thicknesses were investigated using ultraviolet (UV)-visible spectroscopy and atomic force microscopy (AFM). Both types of double layer structures showed similar broadened absorption patterns in the UV-visible region that were consistent with the fitted spectra following simple linear combination of the single layer absorption spectra of the two materials. In contrast, the surface morphology of double layer structures was dependent on the order of deposition. For the CuPc/SubPc structures, surface morphology was characterized by elongated grains, which are characteristic of SubPc thin films, indicating that the morphological influence of the underlying CuPc layer on the subsequent SubPc layer was not large. For the SubPc/CuPc structures, however, the underlying SubPc layer acted as a morphological template for the subsequently deposited CuPc layer. It was also observed that the grain size of the CuPc layer varied according to the thickness of the underlying SubPc layer.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.751-753
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• 2007

최근에 유기물 전계효과 트랜지스터의 연구는 전자 소자 분야에서 널리 알려져 있다. 특히 본 연구에서는 CuPc 물질을 활성층으로 사용하여 Organic FET 소자를 제작하였다. Source와 Drain 전극을 Au와 Al을 사용하여 FET 소자의 전기적 특성을 비교하였다. CuPc FET 소자에서 CuPc 활성층의 두께는 40nm로 고정하였고, Au와 Al 전극의 두께는 200nm로 하여 소자를 제작하였다. 또한 C-V 특성을 측정하여 CuPc 유기물 층과 $SiO_2$ 절연층 계면에서의 특성 변화를 관측하였다. Au를 전극으로 사용한 FET 소자에서는 전형적인 FET 특성 곡선을 관측할 수 있었으나, Al을 전극을 사용한 FET 소자에서는 누설 전류가 흐르고 있음을 확인 할 수 있었다.

• Macromolecular Research
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• 제14권1호
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• pp.38-44
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• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.