• ETRI Journal
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• v.39 no.6
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• pp.874-879
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• 2017

This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass-manufacturable spray-coating technology enables the fabrication of two different half-cell electric double layer capacitors (EDLC) with a spray-coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half-cell EDLC with the spray-coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half-cell EDLC with the spray-coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from -0.5 V to 0.5 V, the spray-coated thin film energy storage device exhibits a better performance.

• Journal of the Korean Electrochemical Society
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• v.22 no.3
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• pp.122-127
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• 2019

In this study, we investigate the electrochemical performance of lithium terephthalate (LTA) battery using graphite coated metal current collector to overcome the disadvantages of organic batteries which is high interfacial resistance between current collector and electrode. The LTA anode material is synthesized by acid-based ion exchange reaction without impurities. The contact properties between stick-type LTA-based electrode and graphite coated current collector are estimated by the cross-section SEM and EIS. The graphite coated current collector significantly reduced the interfacial resistance of the LTA battery. The second discharge capacities of bare current collector LTA and graphite coated current collector LTA batteries are 107.6 mAh/g and 148.8 mAh/g at 0.1C, respectively. The graphite coated current collector LTA batteries show higher cycle life, higher discharge capacity, and higher rate-capability than bare LTA batteries.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.159-163
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• 2023

Zinc-ion Batteries (ZIBs) are currently considered to be effective energy storage devices for wearable electronics because of their low cost and high safety. Indeed, ZIBs show high power density and safety compared with conventional lithium ion batteries (LIBs) and exhibit high energy density in comparison with supercapacitors (SCs). However, in spite of their advantages, further current collector development is needed to enhance the electrochemical performance of ZIBs. To design the optimized current collector for high performance ZIBs, a high quality graphene film is suggested here, with improved electrical conductivity by controlling the defects in the graphene film. The graphene film showed improved electrical conductivity and good electron transfer between the current collector and active material, which led to a high specific capacity of 346.3 mAh g^-1 at a current density of 100 mA g^-1, a high-rate performance with 116.3 mAh g^-1 at a current density of 2,000 mA g^-1, and good cycling stability (68.0 % after 100 cycles at a current density of 1,000 mA g^-1). The improved electrochemical performance is firmly because of the defects-controlled graphene film, leading to improved electrical conductivity and thus more efficient electron transfer between the current collector and active material.

• Journal of Power Electronics
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• v.16 no.1
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• pp.362-373
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• 2016

The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u_Ee) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

• ETRI Journal
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• v.15 no.3
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.1
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• pp.38-42
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• 2017

The wear of the third track power collector is one of the essential check factors for safe train operation. Rapid wear of the current collector accelerates the line of the catenary. In addition, the arc generated when the catenary line is turned off causes a malfunction in the minute portion of the catenary line, thereby shortening the life of the catenary line. In this paper, to analyze the mechanical wear of the current collector during driving according to the environmental factor of the Maglev(magnetic levitation train), it was divided into dry season and wet season. the wear of metallized collector, copper alloy collector and carbon collector were measured and compared with each other. The wear rate was measured according to the position of the wire, the position of the power collector and the position per hour. Microscopic photographs of the cross section and surface of the power collector were measured. The electrical currents of the metallized collector, copper alloy collector and carbon collector were measured.

• Korean Journal of Materials Research
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• v.31 no.5
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• pp.272-277
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• 2021

Owing to its low cost, easy fabrication process, and good ionic properties, aqueous supercapacitors are under strong consideration as next-generation energy storage devices. However, the limitation of the current collector is its poor electrochemical stability, leading to low energy storage performance. Therefore, a reasonable design of the current collector and the acidic electrolyte is a necessary, as well as interfacial engineering to enhance the electrochemical performance. In the present study, graphite foil, with excellent electrochemical stability and good electrical properties, is suggested as a current collector of aqueous supercapacitors. This strategy results in excellent electrochemical performance, including a high specific capacitance of 215 F g^-1 at a current density of 0.1 A g^-1, a superior high-rate performance (104 F g^-1 at a current density of 20.0 A g^-1), and a remarkable cycling stability of 98 % at a current density of 10.0 A g^-1 after 9,000 cycles. The superior energy storage performance is mainly ascribed to the improved ionic diffusion ability during cycling.

• Korean Chemical Engineering Research
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• v.52 no.2
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• pp.182-186
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• 2014

Two commercial carbon plates were evaluated as a current collector (bipolar plate) in the all vanadium redox-flow battery (V-RFB). The performance properties of V-RFB were test in the current density of $60mA/cm^2$. The electromotive forces (OCV at SOC 100%) of V-RFB using A and B current collector were 1.47 V and 1.54 V. The cell resistance of V-RFB using A current collector was $4.44{\sim}5.00{\Omega}{\cdot}cm^2$ and $3.28{\sim}3.75{\Omega}{\cdot}cm^2$ for charge and discharge, respectively. The cell resistance of V-RFB using B current collector was $4.19{\sim}4.42{\Omega}{\cdot}cm^2$ and $4.71{\sim}5.49{\Omega}{\cdot}cm^2$ for charge and discharge, respectively. The performance of V-RFB using each current collector was evaluated. The performance of V-RFB using A current collector was 93.1%, 76.8% and 71.4% for average current efficiency, average voltage efficiency and average energy efficiency, respectively. The performance of V-RFB using B current collector was 96.4%, 73.6% and 71.0% for average current efficiency, average voltage efficiency and average energy efficiency, respectively.

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.511-520
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• 2016

Electrolyte-supported symmetric Ni-YSZ cermet electrodes of ca. $23{\mu}m$ were prepared by screenprinting and the impedance was measured as a function of humidity from 2% to 90% balanced in $H_2$ at a total flow rate of 50 sccm. The Ni felt current collector of 1 mm thickness exhibited a Gerischer-like gas concentration impedance in the low frequency range, which was similarly observed in the cermet-supported solid oxide cells, while the Pt paste collector exhibited only electrochemical polarization. The electrochemical polarization of both samples was modeled by a non-ideal diffusion-reaction transmission line model including CPEs with ${\alpha}$= 0.5. In the case of the Pt paste collector, all the Bisquert parameters exhibited humidity dependence to the -1/2 power, supporting a non-faradaic chemical reaction mechanism at three phase boundaries. Consequently, the surface diffusivity and reaction rate increased linearly with humidity. Less pronounced humidity dependence and somewhat lower utilization length with an Ni felt collector can be attributed to the diffusion-limited gas flow through the collector.

• Journal of Satellite, Information and Communications
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• v.11 no.3
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• pp.114-118
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• 2016

In this paper, we present the advanced open collector circuit, interface circuit between aerospace electronics. Satellite is composed of a number of electronics, which were provided from various manufacturers. Each company manufactured its own electronics for satellite using its heritage and requirements for their electronics. Therefore each electronics may use different internal supplies. It make a problem between electronics because the supply is different from other electronics, such as the increasing of power dissipation because of the static current and the mismatch of interface voltage, the offset. Proposed circuit can reduce the static current and rising time, and also decrease the useless power dissipation caused by the static current for open collector circuit