• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.4
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• pp.789-795
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• 2011

It is necessary to accurately predict converter losses for optimized design of a high-power DC-DC converter. The losses of switching devices and inductor among the elements of the converter take significantly greater proportion. The current ripple will be determined by the size of the inductance and this inductance value varies depending on the DC amount of inductor current. As the inductance changes according to load current, the change influences not only the inductor loss itself but also the total converter loss. In this paper, for more accurate design of a bi-directional DC-DC converter for 30kW-class energy storage system, more accurate computational model is proposed considering inductance variation according to the load current change. The inductance changes using variable magnetic cores are verified and converter efficiency is tested through simulations and experiments.

• Journal of Electrical Engineering and Technology
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• v.13 no.2
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• pp.781-789
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• 2018

This paper proposes a new approach utilizing empirical mode decomposition (EMD) reconstruction to process vibration signals of a transformer under DC bias caused by high voltage direction transmission (HVDC), which is the potential cause of additional vibration and noise from transformer. Firstly, the Calculation Method is presented and a 3D model of transformer is simulated to analyze transformer deformation characteristic and the result indicate the main vibration is produced along axial direction of three core limbs. Vibration test system has been built and test points on the core and shell of transformer have been measured. Then, the signal reconstruction method for transformer vibration based on EMD is proposed. Through the EMD decomposition, the corrupted noise can be selectively reconstructed by the certain frequency IMFs and better vibration signals of transformer have been obtained. After EMD reconstruction, the vibrations are compared between transformer in normal work and with DC bias. When DC bias occurs, odd harmonics, vibration of core and shell, behave as a nonlinear increase and the even harmonics keep unchanged with DC current. Experiment results are provided to collaborate our theoretical analysis and to illustrate the effectiveness of the proposed EMD method.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.113-116
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• 2003

Confluence buffers and single flux quantum (SFQ) switches are essential components in constructing a high speed superconductive Arithmetic Logic Unit (ALU). In this work, we developed a SFQ confluence buffer and an SFQ switch. It is very important to optimize the circuit parameters of a confluence buffer and an SFQ switch to implement them into an ALU. The confluence buffer that we are currently using has a small bias margin of $\pm$11％. By optimizing it with a Josephson circuit simulator, we improved the design of confluence buffer. Our simulation study showed that we improved bias global margin of 10％ more than the existent confluence buffer. In simulations, the minimal bias margin was $\pm$33％. We also designed, fabricated, and tested an SFQ switch operating in a DC mode. The mask layout used to fabricate the SFQ switch was obtained after circuit optimization. The test results of our SFQ switch showed that it operated correctly and had a reasonably wide margin of $\pm$15％.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.683-693
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• 2011

In this paper, a design of high current and broad-band microwave bias-tee was presented for a stable bias of a high power amplifier. An input impedance of bias-tee should be shown to 50 ohm with the wideband in order to be stably-biased the amplifier. For this design of the bias-tee, a capacitor of bias-tee for a DC block was designed with a high wide-band admittance by a parallel sum of capacitors, and a inductor for a RF choke and a DC feeding was designed with a high wide-band impedance by a series sum of inductors. As this inductor and capacitor for the sum has each SRF, band-limitation of lumped element was driven from SRF. This limitation was overcome by control of a resonance's quality factor with adding a resistor. 1608 SMD chips for design's element was mounted on the this pattern for the designed bias-tee. The fabricated bias-tee presented 10 dB of return loss and wide-band about 50 ohm input impedance at 10 MHz~10 GHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.540-542
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• 2009

Phosphorus doped ZnO (PZO) thin films were deposited on $SiO_2$/n-Si substrates using DC magnetron sputtering system varying oxygen partial pressures from 0 to 40 % under Ar atmosphere. The deposited films showed reduced n-type conductivity due to the compensating donor effects by phosphorus dopant. The bias-time stability shows relatively good stability over bias and time comparing to un-doped ZnO-based TFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.242-242
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• 2009

Fabrication of Anodic aluminum oxide under DC vias condition has been studied. When bias and time of anodic aluminum oxide process change, the hole distance and diameter size change. Comparison of fabricated AAO between AC vias and DC vias condition has been studied in this experiment. The first and second anodization of one aluminum is done by using DC and AC power supplier. And first and second anodization of another aluminum is done by DC power supplier. The size of the aluminum is $1cm{\times}3cm$, and second anodic aluminum oxide process takes about 45min. It is found that the hexagonal shape appears on the surface of the AAO. AC power source can fabricate aao which have a nano hole array. We can see that the hole on the surface of the AC vias has a better rounded hole than DC vias AAO. we need more data so we can get characteristic about AC power generated AAO.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.220-229
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• 2004

We have examined a technique of one-dimensional (1D) fluid modeling for radio-frequency Ar capacitively coupled plasmas (CCP) between unequal-sized powered and grounded electrodes. In order to simulate a practical CCP reactor configuration with a grounded side wall by the 1D model, it has been assumed that the discharge space has a conic frustum shape; the grounded electrode is larger than the powered one and the discharge space expands with the distance from the powered electrode. In this paper, we focus on how much a 1D model can approximate a 2D model and evaluate their comparisons. The plasma density calculated by the 1D model has been compared with that by a two-dimensional (2D) fluid model, and a qualitative agreement between them has been obtained. In addition, 1D and 2D calculation results for another reactor configuration with equal-sized electrodes have also been presented together for comparison. In the discussion, four CCP models, which are 1D and 2D models with symmetric and asymmetric geometries, are compared with each other and the DC self-bias voltage has been focused on as a characteristic property that reflects the unequal electrode surface areas. Reactor configuration and experimental parameters, which the self-bias depends on, have been investigated to develop the ID modeling for reactor geometry with unequal-sized electrodes.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.4
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• pp.551-561
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• 2001

In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.139-143
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• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.