• 전기학회논문지
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• 제60권4호
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• pp.789-795
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• 2011

It is necessary to accurately predict converter losses for optimized design of a high-power DC-DC converter. The losses of switching devices and inductor among the elements of the converter take significantly greater proportion. The current ripple will be determined by the size of the inductance and this inductance value varies depending on the DC amount of inductor current. As the inductance changes according to load current, the change influences not only the inductor loss itself but also the total converter loss. In this paper, for more accurate design of a bi-directional DC-DC converter for 30kW-class energy storage system, more accurate computational model is proposed considering inductance variation according to the load current change. The inductance changes using variable magnetic cores are verified and converter efficiency is tested through simulations and experiments.

• Journal of Electrical Engineering and Technology
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• 제13권2호
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• pp.781-789
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• 2018

This paper proposes a new approach utilizing empirical mode decomposition (EMD) reconstruction to process vibration signals of a transformer under DC bias caused by high voltage direction transmission (HVDC), which is the potential cause of additional vibration and noise from transformer. Firstly, the Calculation Method is presented and a 3D model of transformer is simulated to analyze transformer deformation characteristic and the result indicate the main vibration is produced along axial direction of three core limbs. Vibration test system has been built and test points on the core and shell of transformer have been measured. Then, the signal reconstruction method for transformer vibration based on EMD is proposed. Through the EMD decomposition, the corrupted noise can be selectively reconstructed by the certain frequency IMFs and better vibration signals of transformer have been obtained. After EMD reconstruction, the vibrations are compared between transformer in normal work and with DC bias. When DC bias occurs, odd harmonics, vibration of core and shell, behave as a nonlinear increase and the even harmonics keep unchanged with DC current. Experiment results are provided to collaborate our theoretical analysis and to illustrate the effectiveness of the proposed EMD method.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.113-116
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• 2003

Confluence buffers and single flux quantum (SFQ) switches are essential components in constructing a high speed superconductive Arithmetic Logic Unit (ALU). In this work, we developed a SFQ confluence buffer and an SFQ switch. It is very important to optimize the circuit parameters of a confluence buffer and an SFQ switch to implement them into an ALU. The confluence buffer that we are currently using has a small bias margin of $\pm$11％. By optimizing it with a Josephson circuit simulator, we improved the design of confluence buffer. Our simulation study showed that we improved bias global margin of 10％ more than the existent confluence buffer. In simulations, the minimal bias margin was $\pm$33％. We also designed, fabricated, and tested an SFQ switch operating in a DC mode. The mask layout used to fabricate the SFQ switch was obtained after circuit optimization. The test results of our SFQ switch showed that it operated correctly and had a reasonably wide margin of $\pm$15％.

• 한국전자파학회논문지
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• 제22권7호
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• pp.683-693
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• 2011

본 논문에서는 고출력 증폭기의 바이어스를 위한 대전류 마이크로파 광대역 바이어스-티의 설계를 보였다. DC 블록용 커패시터는 큰 어드미턴스를 가지도록 커패시터의 병렬합을 이용하고, DC 공급 및 RF 초크용 인덕터는 광대역의 큰 임피던스를 가지는 인덕터의 직렬합을 이용하여 설계하였다. DC 블록이나 RF 초크에 사용되는 인덕터나 커패시터는 자기 공진 주파수(SRF: Self Resonance Frequency)를 가지고 있어 사용 대역이 제약된다. 이를 해결하기 위해 RF 초크에서는 저항을 추가하여 공진 주파수에서 품질 계수를 조정함으로써 해결하였다. 그리고 DC 블록에서는 별도의 품질 계수 조정없이 병렬합만으로 가능하였다. 이 결과를 이용하여 1608 칩 형태의 집중 소자들을 표면 실장 기법(surface mount)으로 PCB 패턴에 조립하여 바이어스-티를 제작하였다. 제작된 바이어스-티는 10 MHz~10 GHz에서 측정된 반사 손실이 10 dB 이하를 가지며, 입력 임피던스는 광대역에서 50 ohm 근처의 값을 만족하는 것을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.540-542
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• 2009

Phosphorus doped ZnO (PZO) thin films were deposited on $SiO_2$/n-Si substrates using DC magnetron sputtering system varying oxygen partial pressures from 0 to 40 % under Ar atmosphere. The deposited films showed reduced n-type conductivity due to the compensating donor effects by phosphorus dopant. The bias-time stability shows relatively good stability over bias and time comparing to un-doped ZnO-based TFTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.242-242
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• 2009

Fabrication of Anodic aluminum oxide under DC vias condition has been studied. When bias and time of anodic aluminum oxide process change, the hole distance and diameter size change. Comparison of fabricated AAO between AC vias and DC vias condition has been studied in this experiment. The first and second anodization of one aluminum is done by using DC and AC power supplier. And first and second anodization of another aluminum is done by DC power supplier. The size of the aluminum is $1cm{\times}3cm$, and second anodic aluminum oxide process takes about 45min. It is found that the hexagonal shape appears on the surface of the AAO. AC power source can fabricate aao which have a nano hole array. We can see that the hole on the surface of the AC vias has a better rounded hole than DC vias AAO. we need more data so we can get characteristic about AC power generated AAO.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권5호
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• pp.220-229
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• 2004

We have examined a technique of one-dimensional (1D) fluid modeling for radio-frequency Ar capacitively coupled plasmas (CCP) between unequal-sized powered and grounded electrodes. In order to simulate a practical CCP reactor configuration with a grounded side wall by the 1D model, it has been assumed that the discharge space has a conic frustum shape; the grounded electrode is larger than the powered one and the discharge space expands with the distance from the powered electrode. In this paper, we focus on how much a 1D model can approximate a 2D model and evaluate their comparisons. The plasma density calculated by the 1D model has been compared with that by a two-dimensional (2D) fluid model, and a qualitative agreement between them has been obtained. In addition, 1D and 2D calculation results for another reactor configuration with equal-sized electrodes have also been presented together for comparison. In the discussion, four CCP models, which are 1D and 2D models with symmetric and asymmetric geometries, are compared with each other and the DC self-bias voltage has been focused on as a characteristic property that reflects the unequal electrode surface areas. Reactor configuration and experimental parameters, which the self-bias depends on, have been investigated to develop the ID modeling for reactor geometry with unequal-sized electrodes.

• 한국전자파학회논문지
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• 제12권4호
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• pp.551-561
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• 2001

본 연구에서는 GEC-Marconi 사의 H40 GaAs pHEMT 소자에 대해서 새롭게 수정한 Curtice 모델을 사용하여 대신호 통합모델을 구축하였다. 통합모델에는 DC 특성과 biss에 따른 소신호 및 잡음 특성이 모두 포함되어 있으며, 특히 수정되 Curtice 모델을 사용함으로써 gate-source 간의 전압이 증가함에 따라 나타나는 pHEMT 의 transconductance(이하 $g_{m}$) 특성을 매우 간단하면서도 물리적으로 설명할 수 있게 하였다. 또한 통합모델 내부에는 RF-choke를 사용함으로써 $g_{m}$, $R_{ds}$ 성분의 DC 상태와 AC 상태에서의 차이를 설명하게 하였다. 통합모델을 HP사의 simulation tool 인 MDS(Microwave Design System)의 SDD(Symbolically Defined Device)를 이용하여 구현한 후, 실제의 data와 비교한 결과 DC, small signal, 그리고 noise 에 대한 특성에 H40 pHEMT 와 대부분 일치함을 보았으며, 선형과 다양한 harmonic balance simulation 의 수렴성 및 정확성을 확인함으로써 본 모델을 이용한 경우 저잡음 증폭기, 발진기, 그리고 혼합기 등의 여러 부품설계를 할 수 있음을 보였다.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 전자공학회논문지A
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• 제33A권10호
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• pp.139-143
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• 1996

We report on the static and dynamic characteristics of optically modulated resonant tunneling diode oscillator (RTDO) formed in double-barrier quantum-well structure. Under the illumination of Ti:Sapphire laser, the dc current-voltage (I-V) curves of RTDO shifted towared lower voltages. This characteristic was found to odify the series resistance, negtive differential resistance, capacitance, and the inductance of the RTDO. As a result, the resonant frequency of TRDO centered at 5.302 GHz was found to decrease about 20 MHz under the laser illumination. At a constnat bias voltage, the oscillation frequency decreased linearly as the laser power was increased.