• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.112-113
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• 2002

Optical bistability can be applied to the optical logic. optical signal processing and optical memory. We have measured the optical bistability of DFB-SOA and demonstrated all-optical OR logic gate using switching characteristics of DFB-SOA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.109-111
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• 2002

We have demonstrated all-opticalflip-flop based on optical bistability in a SOA/DFB-SOA with broadband gain. Input signal with the wavelength of 1340.23 nm or 1680.93 nm and the current of about 98% of the lasing threshold is injected into theDFB-SOA. Current injected into SOA is 80 mA All-optical flip-flop has various applications such as all-optical memory, demultiplexing, packet-header buffering, and retiming.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.146-147
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• 2002

대용량의 정보를 고속으로 처리하는데 있어서 기존의 전자소자 성능은 제한이 있기 때문에 광소자의 개발과 그 응용에 대한 관심이 증가하고 있다. 광쌍안정 소자는 파장 변환기, 광클럭 발생기, 광신호 재생기, 광논리소자, 광메모리 등의 광 기능소자에 이용될 수 있다. 광쌍안정 소자는 매질의 비선형 특성과 궤환 구조를 필요로 하며, 주요 메커니즘에 따라 흡수형 광쌍안정 소자와 분산형 광쌍안정 소자로 구별된다. (중략)

• Journal of the Optical Society of Korea
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• v.11 no.4
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• pp.158-161
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• 2007

We proposed a novel linearization technique for a DFB LD in the RoF link. The proposed scheme is based on the cross gain modulation(XGM) effect of a reflective semiconductor optical amplifier(RSOA) with light injection. We experimentally demonstrated and evaluated the enhanced CIR performance using the proposed linearization scheme.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.23-30
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• 2000

To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.96-97
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• 2003

We developed a wavelength selectable 8-channel WDM otpical transmitter. The module consisted of two 4-channel DFB-LD arrays monolithically integrated with a 1x4 Power combiner and an SOA. It operated at 1550 nm and 200 GHz spacing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.197-200
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• 2000

All-optical NOR logic device was realized by use of two pump signals with a single wavelength and a semiconductor optical amplifier(SOA). Specially, Mach-Zehnder(MZ) modulator was used for an external modulation of the pump signals. To obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier(EDFA) at the input of the SOA. Pump and probe signals are obtained from a DFB laser diode(${\lambda}_p$=1554 nm) and a tunable laser diode(${\lambda}_s$=1535 nm), respectively. The operation characteristics of the NOR logic device are successfully measured and demonstrated at the modulation frequency of 4.83 MHz.