• Journal of the Korean Applied Science and Technology
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• v.35 no.4
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• pp.1145-1155
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• 2018

The purpose of this study was to investigate the effect of dietary restriction(DG), aerobic exercise(EG), dietary restriction with aerobic exercise(DEG) on weight, improvement of obesity, blood lipid profiles and metabolic risk factors of obese female college students. Experiments was conducted 5 times a week for 8 weeks. DG spent 300kcal/day, and EG used 300kcal/day to run, DEG each consumed 150kcal/day limits. As s result, in case of body composition, weight(p<.011) and BMI(p<.008) were decreased in DG group, and weight(p<.044, p<.017), body fat(p<.047, p<.018), BMI(p<.03, p<.008), body fat%(p<.036, p<.015) and WHR(p<.049, p<.027) were decreased in EG and DEG groups. In case of blood lipid profiles's change, there are some differences on TC(p<.006), TG(p<.047) according to the time. In DG:HDL-C(p<.028), in EG:TG(p<.038), in DEG:TC(p<.014), LDL-C(p<.007) have decreased. In case of metabolic risk factor's change, there are some differences on FBG(p<.001), insulin(p<.004), HOMA-IR(p<.001), leptin(p<.000), adiponectin(p<.038), resistin(p<.010) according to time. In DG:HOMA-IR(p<.035) and leptin(p<.007), EG:FBG(p<.043) and leptin(p<.003), DEG:FBG(p<.014), insulin(p<.005), HOMA-IR(p<.005), leptin(p<.016), and resistin(p<.040) have decreased. In conclusion, combined treatment of eating restriction with aerobic exercise was the most effective way to improvement of weight, blood lipid profiles and metabolic risk factors in obese female college students rather than respectively alone treatment.

• YAKHAK HOEJI
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• v.6 no.1
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• pp.1-4
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• 1962

A new tannin, polygagallin, related to acertannin, is isolated from air-dried leaves of Acer ginnala Max. as prismatic crystals with 1/2 H$_{2}$O per mole, m.p.154-155.deg. and [.alpha.]$_{D}$$^{29}$ +43.79.deg. C. Polygagllin gives hexaacetate, m.p.164.5.deg. C, [.alpha.]$_{D}$$^{28}$ +42.deg. C, on treating with anhydroacetic acid and on treating with diazomethane, gives trimethyl ether, m.p.176.deg. C, [.alpha.]$_{D}$$^{22}$ +53.43, which yields triacetate, m.p.160.5.deg. C, [.alpha.]$_{D}$$^{22}$ + 132.5.deg. C, on acetylation and is not attacked by periodate. On hydrolysis, trimethoxypolygagallin yields one mole of polygalitol and that of trimethoxygallic acid. By the above results polygalallin has been established as 3-galloylpolygalito.ygalito.galallin has been established as 3-galloylpolygalito.

• Bulletin of the Korean Mathematical Society
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• v.61 no.1
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• pp.229-246
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• 2024

We consider the delay differential equations $$b(z)w(z+1)+c(z)w(z-1)+a(z)\frac{w'(z)}{w^k(z)}=\frac{P(z, w(z))}{Q(z, w(z))}$$, where k ∈ {1, 2}, a(z), b(z) ≢ 0, c(z) ≢ 0 are rational functions, and P(z, w(z)) and Q(z, w(z)) are polynomials in w(z) with rational coefficients satisfying certain natural conditions regarding their roots. It is shown that if this equation has a non-rational meromorphic solution w with hyper-order ρ2(w) < 1, then either deg_w(P) = deg_w(Q) + 1 ≤ 3 or max{deg_w(P), deg_w(Q)} ≤ 1. In addition, it is shown that in the case max{deg_w(P), deg_w(Q)} = 0 the equations above can have such a solution, with an additional zero density requirement, only if the coefficients of the equation satisfy certain strict conditions.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.737-743
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• 1995

Two step RTD(Rapid Thermal Diffussion) of P into silicon wafer using tungsten halogen lamp was used to fabricated very shallow n$^{+}$p junction. 1st RTD was performed in the temperature range of 800.deg. C for 60 see and the heating rate was in the 50.deg. C/sec. Phosphrous solid source was transfered on the silicon surface. 2nd RTD process was performed in the temperature range 1050.deg. C, 10sec. Using 2 step RTD we can obtain a shallow junction 0.13.mu.m in depth. After RTD, the Ti-silicide process was performed by the two step RTA(Rapid Thermal Annealing) to reduced the electric resistance and to improve the n$^{+}$p junction diode. The titanium thickness was 300.angs.. The condition of lst RTA process was 600.deg. C of 30sec and that of 2nd RTA process was varied in the range 700.deg. C, 750.deg. C, 800.deg. C for 10sec-60sec. After 2 step RTA, sheet resistance was 46.ohm../[]. Ti-silicide n+p junction diode was fabricated and I-V characteristics were measured.red.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.168-168
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• 2010

InAs는 0.35eV의 낮은 밴드갭을 가지며 상온에서 약 $30,000cm^2/Vs$의 높은 전자이동도를 보여, GaAs/AlGaAs 및 InGaAs/InP 2DEG HEMT에 이은 차세대 초고속 전자소자의 2DEG용 물질로 각광을 받고 있다. 그러나 InAs의 격자상수는 약 0.61nm로 이에 적절한 반절연기판을 구할수 없어, GaAs상에 Al(Ga)Sb를 이용하여 성장하는 방법으로 2DEG을 실현하고 있다. 상기 방법으로 상온에서 ${\sim}30,000cm^2/Vs$ 전자이동도를 보이는 InAs/AlSb 2DEG HEMT 소자를 여러 연구팀에서 시현하였으나, 실제적으로 응용하기 위해서 etch-stop층 또는 contact층의 제작이 용이치 않아 실제의 회로구현에는 어려움을 격고 있다. 이에 InGaAs/InP 2DEG내에 InAs를 넣어 InAs 2DEG을 제작하는 방법이 NTT[1]에 의해 제안되어, SPINTRONICS등의 InAs 2DEG이 필요한 곳에 응용되고 있다. [2] 본 발표에서는 고품질의 InAs 2DEG을 실현하기 위해, 다양한 성장 변수 (온도, As 분압, 성장 시퀀스, InAs층의 두께등)와 2DEG의 전기적특성간의 관계를 발표한다. 최종적으로 상온전자이동도 ${\sim}12,000cm^2/Vs$의 InAs 2DEG을 제작할수 있었으며, 이를 다양한 전자소자에 차후 응용할 예정이다.

• Bulletin of the Korean Mathematical Society
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• v.47 no.1
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• pp.211-219
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• 2010

Let P be a Jacobian polynomial such as deg P = $deg_y$ P. Suppose the Jacobian polynomial P satisfies the intersection condition satisfying $dim_C$ C[x, y]/$P_y$> = deg P - 1, we can prove that the Keller map which has P as one of coordinate polynomial always has its inverse.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.316-318
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• 2003

양자우물 구조를 사용한 HEMT(High Electron Mobility Transistor)는 고속 스위칭 소자와 초고주파 통신용 소자 및 센서에에 우수한 동작특성을 갖고 있다. 본 논문에서는 AlInAs/InP HEMT의 heterostructure를 파동방정식과 Poisson 방정식을 self-consistent 한 방법으로 해석하였다. 파동방정식으로 junction의 전자농도를 계산하고, Poisson 방정식을 해석하여 potential profile에 의한 전자 농도가 heterostructure에서 self-consistent가 되도록 연산하였다. 끝으로 AlInAs/InP 구조에서 positively ionized donor, valance band에서의 hole, conduction band의 free electron과 구조내의 2DEG를 AlGaAs/GaAs 및 AlGaAs/InGaAs/GaAs와 비교하였다.

• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.1
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• pp.74-81
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• 1987

The orthogonal cutting method of the nodular graphite cast iron in the lathe turning, whose structure were formulated under two kinds of annealing conditions, has been experimentally studied and the results investigated. The various characteristics of machinabilities of the nodular cast iron, depending upon its structure, have been obtained from the results as follows. (1) As depth of cut increases, the shearing strain decreases and tend gradually to increase with increase of ferrite matrix. (2) As depth of cut increases, the shearing stress slightly decreases for P$_{1}$, but it tends to increase for both of P$_{2}$ and P$_{3}$ under the same condition. The annealing effect in the process of light cutting was found to be greater than heavy cutting. (3) The cutting energy slightly decreases with the increassing of the depth of cut, and the effect of decreasing the cutting energy by the annealing is higer the light cutting than the heavy cutting. (4) The cutting equations as follow. P$_{1}$ : 2.phi.+1.58(.betha.-alpha.)=92 deg. P$_{2}$ : 2.phi.+1.40(.betha.-alpha.)=84 deg. P$_{3}$ : 2.phi.+1.37(.betha.-alpha.)=82 deg. (5) The machining constants for P$_{1}$, P$_{2}$ and P$_{3}$ which are the test-pieces in this study and classified according to the containing quantity of ferrite matrix given respectively in 78deg., 70 deg., and 68 deg. From these it can be known that the machining constants slightly decreases with increasing of the quantity of ferrite matrix contained in the nodular graphite cast iron.

• 제어로봇시스템학회:학술대회논문집
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• 1988.10a
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• pp.620-626
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• 1988

GaAs solar cells may be the most attractive and efficient power source of a satellite. GaAs is more radiation tolerant and less temperature sensitive than widely used silicon. $Al_{x}$ Ga$_{1-x}$ As/GaAs solar cells have been designed and fabricated by Liquid Phase Epitaxial method. GaAs solar cells, of which structure is about 0.2 .mu.m p$^{+}$ - window layer, 0.6-1.O .mu.m Ge-doped p-layer. 3.mu.m n-GaAs layer and n$^{+}$ - buffer layer, have been characterized as a function of operating temperature from 25 .deg.C to 130 .deg.C. Open circuit voltage decreases linearly with increasing temperature by 1.4-1.51 mV/ .deg.C while degradation of silicon solar cells is about 2.2-2.5 mV/ .deg.C, short circuit current does not increase much with increasing temperature. Relative efficiency decreases with increasing of temperature by about 0.21-0.29 %/ .deg.C. Efficiency degradation of silicon solar cells with temperature is known to be about 0.5%/ .deg.C and our results show GaAs solar cells may be an excellent candidate for concentrated solar cells.ells.

• Computational Structural Engineering
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• v.3 no.3
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• pp.101-111
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• 1990

The elastic analysis of floor slabs using the p-version of finite element method encounters stress singularities at certain types of reentrant corners, openings and cut-outs. Results obtained using the computer code based on C.deg. - hierarchic plate element formulated by Reissner-Mindlin theory are compared with theoretical predictions and with computational results reported in the literature. The convergence rate of h-, p- and hp-version can be estimated on the basis of the energy norm in global sense. If accuracy in terms of the number of degree-of-freedom is used as a criterion, the solutions presented here are the most efficient that have been published up to date. Examples are the rhombic plate with the obtuse angle of 150.deg. and the square plate with cut-outs.