• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.364-367
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• 2010

The dual ion-implantation trench edge termination techniques were investigated and optimized using a two-dimensional device simulator. By trenching the field ring site which would be dual implanted, a better blocking capability can be obtained. The results show that the p-n junction with dual implanted junction field-ring can accomplish nearly 20% increase of breakdown voltage in comparison with the conventional trench field-rings. The fabrication is relatively difficult. But the trench etched field ring with dual ion-implantation is surpassed for breakdown voltage and consume same area and extensive device simulations as well as qualitative analysis confirm these conclusions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.251-259
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• 2010

We proposed a tail function parameter extraction procedure for the establishment of a robust ion implantation database. We showed that, for the expression of ion implantation profiles, there are many local minimum values set for the third and fourth moment parameters of $\gamma$ and $\beta$ for the Pearson function that comprises the standard dual Pearson and tail functions. We proposed the use of a joined tail function as a mediate function to extract $\gamma$ and $\beta$, and demonstrated that this enables us to extract the parameters uniquely. Other parameters associated with channeling phenomena can also be simply and uniquely extracted by our procedure.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.62-66
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• 2002

Hydraulic pumps are used to control the landing wheels of aircrafts, and their proper operation is vital to plane safety It is well hewn that adhesive wear failure is a major cause of pump failure. A dual nitrogen plasma immersion ion implantation process calling for the implantation of nitrogen at two different energies and doses has been developed to enhance the surface properties of the disks in the pumps. The procedures meet the strict temperature requirement of <200$^{\circ}C$, and after the treatment, the working lifetime of the pumps increases by more than a factor of two. This experimental protocol has been adopted by the hydraulic pump factory as a standard manufacturing procedure.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.344-346
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• 2016

본 논문에서는 3-stream model에 기반한 Dopant diffusion simulator를 사용하여 실리콘 기판 내부의 As이온의 확산을 시뮬레이션한 결과와 Dual-Pearson Analytic model에 기반하여 Ion implantation을 1-D doping simulation한 결과를 토대로 여러 공정 설계에서 diffusion simulator의 사용가능함을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• 대한공업교육학회지
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• v.33 no.1
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• pp.249-264
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• 2008

In this dissertation, shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes and a new simulator is designed to model boron diffusion in silicon. This simulator predicts the boron distribution after ion implantation and annealing. The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a RTA(Rapid Thermal Annealing) and a FA(Furnace Annealing) process. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of sheet resistance and the simulator reproduced experimental data successfully. Therefore, proposed diffusion simulator and FA+RTA annealing method was able to applied to shallow junction formation for thermal budget. process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.115-117
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• 2005

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.40-45
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• 1994

The TCAD(Technology Computer Aided Design) software tool is a popular name to be able to simulate the semiconductor process and device circuit. We have developed a two-dimensional TCAD software tool included an editor, parser, each process unit, and 2D, 3D graphic routine that is Integrated Environment. The initial grid for numerical analysis is automatically generated with the geometric series that use the user default(given) line and position separated with grid interval and the nodes corresponding to each mesh point stoic the all the possible attribute. Also, we made a data structure called PIF for input or output. Methods of ion implantation in this paper arc Monte Carlo, Gaussian Pearson and Dual-Pearson. Analytical model such as Gaussian, Pearson and Dual-Pearson were considered the multilayer structure and two-dimensional tilted implantation. We simuttaneously calculated the continuity equation of impurity and point defect in diffusion simulation. Oxidation process was simulated by analytical ERFC(Complementary Error Function) model for local oxidation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.708-712
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• 2004

Shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes. The dopant implantation was performed into the crystalline substrates using BF$_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth and sheet resistance. A new simulator is designed to model boron diffusion in silicon. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using initial conditions and boundary conditions, coupled diffusion equations are solved successfully. The simulator reproduced experimental data successfully.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.16-22
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• 1997

ion beam processing of materials for medical application has gained increasing interest in the last decade and the implantation of nitrogen into TI-6AI-4V to improve corrosive-wear performance is currently used for processing of total hip and knee joints. Oxides and nitrides of Ti, Zr, Al, Cr were deposited on TI-6AI-4V substrates by DC magnetron sputtering dual ion beam sputtering and ion beam assisted deposition. The cytotoxicity of these films were investigated by MTT method and showed comparable to untreated TI-6AI-4V Plasm-sprayed hydroxyapatite(HAp) coatings showed excellent cytotoxicity regardless of heat treatment. intermediate layer coatings of nitrides and oxides increased the bond strength of HAp to substrate by intrdducing chemical bond at interface. Heat treatment of HAp coatings also improved the chemical bond at interfaces and increased the bond strength of untreated TI-6AI-4V to 16.4 kg/$\textrm{cm}^2$ but still lower than 33.1 kg./$\textrm{cm}^2$ of ir oxide as a imtermediate layer caoting.