• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.39-46
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• 2009

A fast-switching current-pulse driver for light emitting diode (LED) backlight is proposed. It uses a regulated drain current mirror (RD-CM) [1] and a high-voltage NMOS transistor (HV-NMOS). It achieves the fast-response current-pulse switching by using a dynamic gain-boosting amplifier (DGB-AMP). The DGB-AMP does not discharge the large HV-NMOS gate capacitance of the RD-CM when the output current switch turns off. Therefore, it does not need to charge the HV-NMOS gate capacitance when the switch turns on. The proposed current-pulse driver achieves the fast current switching by removing the repetitive gate discharging and charging. Simulation results were verified with measurements performed on a fabricated chip using a 5V/40V 0.5um BCD process. It reduces the switching delay to 360ns from 700ns of the conventional current-pulse driver.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.3
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• pp.46-55
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• 2016

This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.