• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.922-925
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• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.887-890
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• 1999

The etch characteristics of E-ICP and ICP are compared for the improvement of SiO$_2$ etch Process. Etch rate and etch pattern profile are measured by $\alpha$ -step surface profiler and SEM, respectively. The E-ICP provides improved characteristics on etch rate and surface profile in comparison to ICP process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.227-232
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• 2002

The silylated photoresist etch process was tested by enhanced-ICP. The comparison of the two process results of micro pattern etching with $0.35\mu\textrm{m}$ CD by E-ICP and ICP reveals that I-ICP has bettor quality than ICP. The etch rate and the RIE lag effect was improved in E-ICP. Especially, the problem of the lateral etch was improved in E-ICP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.608-611
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• 2000

Large area plasma source becomes important as the substrate size increases. In this work, four inductively coupled plasma(ICP) unit sources are distributed 2${\times}$2 array. E-ICP concept is applied to the 2${\times}$2 array ICP and its effect is examined. Characteristics of the plasma are measured, and photoresist etching is performed with oxygen plasma. Good etching characteristic in terms of etching rate and uniformity can be obtained with E-ICP.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.1-328.1
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• 2014

MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.612-615
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• 2000

The etch rate of $SiO_2$ in Enhanced - Inductive Coupled Plasma (E-ICP) and CW-ICP systems are investigated. As addition of $O_2$ to $CF_4$ gas increases oxide etch rate, E-ICP etching shows the highest etch rate (about 6000A) at an optimized condition with 30% $O_2$ in $CF_4$ 70Hz at the modulation frequency of 70Hz. E-ICP also shows better etch profile than CW-ICP.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.298-301
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• 2000

We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30％ O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.616-619
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• 2000

It is important to control the plasma characteristics for high quality plasma process. Recently, a novel method proposed by us, named as Enhanced-ICP, using periodic weak time-varying axial magnetic field added to a normal ICP source, has improved etch characteristics much. Variation of plasma characteristics according to the frequency of time-varying axial magnetic field have been measured and analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.156.2-156.2
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• 2015

반도체 소자의 크기가 나노사이즈로 줄어들기 때문에, 건식식각의 중요성이 강조되고 있다. dual plasma source를 사용함으로써 plasma 밀도, 이온충돌에너지, 이온플럭스를 조절 가능하다. Low frequency로 이온에너지를 조절하고, high frequency로 이온플럭스를 일반적으로 조절한다. 본 연구는 inductively coupled plasma (ICP)와 capacitively coupled plasma (CCP)를 사용하는 dual plasma source이다. ICP는 AE RPS로 2.4 MHz를 사용하고, CCP는 AE RFX-600으로 13.56 MHz이다. single L-probe는 Hiden ESPion이고, quadrupole mass spectrometer (QMS)는 INFICON CPM-300이다. chuck에 CCP가 인가되고, ICP는 SUS mesh를 거쳐서 영향을 미친다. Gas는 Ar, Ar+CF4 두 조건에서 비료를 하였다. Single L-probe를 이용하여 플라즈마를 측정한 결과 CCP만 인가하였을 때, Te 2.05 eV, Ne 4.07E+10 #/cm3, Ni 5.82E+10 #/cm3의 결과를 얻을 수 있었다. ICP를 방전하고 mesh를 통해서 chuck으로 입사하는 이온을 측정한 결과 mesh에 의해 이온이 중성화되어 거의 입사하지 않음을 확인할 수 있었다. 최종적으로 이온의 영향이 상쇄되고, 라디칼의 영향이 증가하여 높은 etch rate와 선택비를 가지며, 등방성 식각의 영향이 커질 것으로 사료된다.

• Analytical Science and Technology
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• v.15 no.5
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• pp.439-444
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• 2002

DE-O-V ICP-AES has been studied for the analytical characteristics of As, Se, and Ge with PN, USN and HG. Effect of $NaBH_4$ and HCl on the signal intensity of As, Se and Ge with HG and E-O-V ICP-AES were closely investigated. The sensitivities of As, Se and Ge with HG were much greater than those with PN and USN. Accordingly, the detection limits of the elements with HG were lower by a factor of 100 and 10 than PN and USN, respectively.